IRIS-G6651 Oscillator provided monolithic control with adopting O
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Data Sheet 96949A
IRIS-G6651
Oscillator provided monolithic control with adopting On-ChipTrimming technology. Small temperature characteristics variation adopting comparator compensate temperature control part. start-up circuit current (100uA max) Built-in Active Low-Pass Filter stabilizing operation case light load Avalanche energy guaranteed MOSFET with high VDSS built-in power MOSFET simplifies surge absorption circuit since MOSFET guarantees avalanche energy. VDSS de-rating required. Built-in constant voltage drive circuit Built-in soft drive circuit Built-in frequency mode (20kHz) Various kinds protection functions Pulse-by-pulse Overcurrent Protection (OCP) Overvoltage Protection with latch mode (OVP) Thermal Shutdown with latch mode (TSD)
IRIS-G6651
INTEGRATED SWITCHER
Package Outline
TO-220 Fullpack Lead)
Specifications
Type MOSFET VDSS(V) RDS(ON) input(V) 230±15% Pout(W) Note
Descriptions
Note Pout represents thermal rating Quasi-Resonant Operation, peak power output obtained approximately 140% above listed. When output voltage ON-duty narrow, Pout shall become lower than that above.
IRIS-G6651 hybrid consists from power MOSFET controller designed Quasi-Resonant (including frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications. This realizes high efficiency, noise, downsizing standardizing power supply system reducing external components count simplifying circuit designs. (Note). abbreviation "Pulse Ratio Control" (On-width control with fixed OFF-time).
Typical Connection Diagram
IRIS-G6600
OCP/FB
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IRIS-G6651
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage device occur. voltage parameters absolute voltages referenced terminals stated, currents defined positive into lead. thermal resistance power dissipation ratings measured under board mounted still conditions.
Symbol IDpeak IDMAX
Definition Drain Current Maximum switching current
Terminals Max. Ratings
Units
Note Single Pulse V2-3=0.78V Ta=-20~+125 Single Pulse VDD=99V, L=20mH peak=2.8A
Tstg
Single pulse avalanche energy Input voltage control part O.C.P/F.B voltage Power dissipation MOSFET Power dissipation control part (Control Internal frame temperature operation Operating ambient temperature Storage temperature Channel temperature
+125 +125 +125
With infintite heatsink
Without heatsink Specified
Refer recommended operating temperature
Refer A.S.O curve Tch-EAS curve Refer Ta-PD1 curve Refer TF-PD2 curve Control (See page Maximum switching current.
Fig.1
V2-3
maximum switching current Drain current determined drive voltage threshold voltage (Vth) FET. Therefore, event that voltage drop occurs between patterning, maximum switching current decreases shown V2-3 Fig.1 Accordingly please this device within decrease value, referring derating curve maximum switching current.
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IRIS-G6651
Electrical Characteristics (for Control
Electrical characteristics control part (Ta=25, Vin=18V,unless otherwise specified)
Symbol Vin(ON) Vin(OFF) Iin(ON) Iin(OFF) TOFF(MAX) Tth(2) TOFF(MIN) Vth(1) Vth(2) IOCP/FB Vin(OVP) Iin(H) in(La.OFF) Tj(TSD)
Definition Operation start voltage Operation stop voltage Circuit current operation Circuit current non-operation Maximum time Minimum time input quasi resonant signals Minimum time O.C.P/F.B threshold voltage O.C.P/F.B threshold voltage O.C.P/F.B extraction current O.V.P operation voltage Latch circuit sustaining current Latch circuit release voltage Thermal shutdown operating temperature
14.4 0.68 20.5
Ratings 0.73 1.45 1.35 22.5
17.6 0.78 24.5
Units µsec µsec µsec
Test Conditions
Vin=017.6V Vin=17.69V
Vin=14V
Vin=024.5V Vin=24.58.5V Vin=24.56.6V
Recommended operating conditions Tth(2)1.0sec Time input quasi resonant signals quasi resonant signal inputted OCP/FB O.C.P/F.B time quasi resonant operation, signal shall Vth(2) wider than Tth(2). minimum time means TOFF width time when minimum quasi resonant signal inputted. latch circuit means circuit operated O.V.P T.S.D.
Electrical Characteristics (for MOSFET)
(Ta=25) unless otherwise specified
Symbol VDSS IDSS
Definition Drain-to-Source breakdown voltage Drain leakage current
Ratings
Units nsec
Test Conditions
ID=300µA =0V(short) =650V V3-2=0V(short) V3-2=10V ID=0.9A
RDS(ON) On-resistance Switching time ch-F Thermal resistance
Between channel internal frame
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IRIS-G6651
IRIS-G6651
IRIS-G6651
A.S.O. temperature derating coefficient curve
MOSFET A.S.O. Curve
Single Pulse
A.S.O. temperature derating coefficient[%]
Drain Current
Drain current limit resistance
0.1ms
temperature derating shall made obtaining Coefficient from left curve your use.
0.01 1000 Drain-to-Source Voltage
Internal frame temperature
IRIS-G6651
Maximum Switching current derating curve 20+125
IRIS-G6651 Avalanche energy derating curve
temperature derating coefficient[%]
Maximum Switchng Current IDMAX[A]
Channel temperature
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IRIS-G6651
IRIS-G6651 MOSFET Ta-PD1 Curve
PD1=24[W]
IRIS-G6651 TF-PD2 Curve
PD2=0.8[W]
Power dissipation D2[W]
Power dissipation PD1[W]
With infinite heatsink
Without heatsink PD1=1.5[W]
Internal frame temperature TF[]
Ambient temperature Ta[]
IRIS-G6651 Transient thermal resistance curve
Transient thermal resistance ch-c[/W]
0.01
0.001
100µ
[sec]
100m
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IRIS-G6651 Block Diagram
START REG. T.S.D
O.V.P.
LATCH DRIVE
Vth(1)
OCP/FB
O.S.C
Vth(2)
Lead Assignments
Symbol OCP/FB
IRIS
Description Drain Source Ground Power supply Overcurrent Feedback
Function MOSFET drain MOSFET source Ground Input power supply control circuit Input overcurrent detection signal constant voltage control signal
Other Functions
O.V.P. Overvoltage Protection Circuit T.S.D. Thermal Shutdown Circuit
OCP/FB
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IRIS-G6651
Case Outline
±0.2 ±0.2 ±0.2
±0.2
±0.2 16.9 ±0.3
IRIS
±0.1 ±0.5 2-(R1) ±0.5
0.94 ±0.15 0.85 -0.1
+0.2
R-end
(4.6) 0.45 -0.1
+0.2
4xp1.7±0.1=(6.8)
5.08 ±0.6
±0.2
aType Number G6651 bLot Number letterThe last digit year letterMonth Jan. Sept., Oct. Nov. Dec. letterDay Arabic Numerals letter Registration Symbol
Weight Approx. 2.3g Dimensions DWG.No.TG3A-1128
Material Treatment plating solder
Data specifications subject change without notice.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 FAX: (310) 252-7903 Visit www.irf.com sales contact information.
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