µPA622TT N-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIP

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µPA622TT N-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIP

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FIELD EFFECT TRANSISTOR
µPA622TT
N-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING
DESCRIPTION
µPA622TT switching device which driven directly power source. This device features on-state resistance excellent switching characteristics, suitable applications such power switch portable machine
PACKAGE DRAWING (Unit:
±0.2
0.25 ±0.1
±0.1
FEATURES
drive available on-state resistance RDS(on)1 MAX. (VGS RDS(on)2 MAX. (VGS RDS(on)3 MAX. (VGS
0.05
0.65
0.65
0.15 -0.05
+0.1
MAX.
ORDERING INFORMATION
PART NUMBER PACKAGE WSOF (1620)
±0.1
0.05
µPA622TT-E1-A µPA622TT-E2-A
Drain Gate Source
Remark "-A" indicates Pb-free (This product does contain external electrode other parts.). "-E1" "-E2" indicates unit orientation. embossed carrier tape, 3000 pcs/reel) Marking:
-0.05
+0.1
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage (VGS VDSS VGSS Gate Source Voltage (VDS Note1 Drain Current (DC) ID(DC) ±3.0 Note2 Drain Current (pulse) ID(pulse) Total Power Dissipation Note1 Total Power Dissipation Channel Temperature +150 Storage Temperature Tstg Notes Mounted FR-4 board 5000 sec. Duty Cycle
EQUIVALENT CIRCUIT
Drain
Gate Gate Protection Diode
Body Diode
Source
Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
products and/or types available every country. Please check with Electronics sales representative availability additional information.
Document G16113EJ2V0DS00 (2nd edition) Date Published 2005 CP(K) Printed Japan
mark
shows major revised points.
2002
µPA622TT
ELECTRICAL CHARACTERISTICS 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Source On-state Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage
Note
Ciss Coss Crss td(on) td(off) VF(S-D)
0.90
Note Pulsed
TEST CIRCUIT SWITCHING TIME TEST CIRCUIT GATE CHARGE
D.U.T.
Wave Form
D.U.T.
Duty Cycle
Wave Form
td(on)
td(off) toff
Data Sheet G16113EJ2V0DS
µPA622TT
TYPICAL CHARACTERISTICS 25°C)
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Percentage Rated Power
Total Power Dissipation
Mounted FR-4 board 5000 sec.
Ambient Temperature
Ambient Temperature
FORWARD BIAS SAFE OPERATING AREA
DS(on) Limited
ID(pulse)
Drain Current
ID(DC)
Single pulse Mounted FR-4 board 5000
0.01
Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
1000
rth(ch-A) Transient Thermal Resistance °C/W
Single pulse Mounted FR-4 board 5000
Pulse Width 1000
Data Sheet G16113EJ2V0DS
µPA622TT
DRAIN CURRENT DRAIN SOURCE VOLTAGE
Pulsed
FORWARD TRANSFER CHARACTERISTICS
Drain Current
Drain Current
Drain Source Voltage
Gate Source Voltage
GATE CUT-OFF VOLTAGE CHANNEL TEMPERATURE Forward Transfer Admittance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
Pulsed
VGS(off) Gate Cut-off Voltage
-25°C 25°C 75°C 125°C
0.01 0.01
Channel Temperature
Drain Current
RDS(on) Drain Source On-state Resistance
Pulsed
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE
Pulsed
Gate Source Voltage
Channel Temperature
Data Sheet G16113EJ2V0DS
µPA622TT
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
Pulsed 125°C 75°C 25°C
25°C
RDS(on) Drain Source On-state Resistance
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
Pulsed 125°C 75°C 25°C
25°C
0.01
0.01
Drain Current
Drain Current
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
1000 Pulsed 125°C 75°C 25°C
25°C
SWITCHING CHARACTERISTICS
td(on), td(off), Switching Time
0.01
Drain Current
Drain Current
CAPACITANCE DRAIN SOURCE VOLTAGE
1000
SOURCE DRAIN DIODE FORWARD VOLTAGE
ulse
Ciss, Coss, Crss Capacitance
Diode Forward Current
Drain Source Voltage
VF(S-D) Source Drain Voltage
Data Sheet G16113EJ2V0DS
µPA622TT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Gate Source Voltage
Gate Charge
Data Sheet G16113EJ2V0DS
µPA622TT
information this document current May, 2005. information subject change without notice. actual design-in, refer latest publications Electronics data sheets data books, etc., most up-to-date specifications Electronics products. products and/or types available every country. Please check with Electronics sales representative availability additional information. part this document copied reproduced form means without prior written consent Electronics. Electronics assumes responsibility errors that appear this document. Electronics does assume liability infringement patents, copyrights other intellectual property rights third parties arising from Electronics products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights Electronics others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. Electronics assumes responsibility losses incurred customers third parties arising from these circuits, software information. While Electronics endeavors enhance quality, reliability safety Electronics products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects Electronics products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment anti-failure features. Electronics products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only Electronics products developed based customerdesignated "quality assurance program" specific application. recommended applications Electronics product depend quality grade, indicated below. Customers must check quality grade each Electronics product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade Electronics products "Standard" unless otherwise expressly specified Electronics data sheets data books, etc. customers wish Electronics products applications intended Electronics, they must contact Electronics sales representative advance determine Electronics' willingness support given application. (Note) "NEC Electronics" used this statement means Electronics Corporation also includes majority-owned subsidiaries. "NEC Electronics products" means product developed manufactured Electronics defined above).
11-1

µPA622TT N-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIP

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