AO4419 uses advanced trench technology provide excellent RDS(ON), gate

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AO4419 uses advanced trench technology provide excellent RDS(ON), gate

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AO4419 P-Channel Enhancement Mode Field Effect Transistor
AO4419 uses advanced trench technology provide excellent RDS(ON), gate charge. This device suitable load switch applications. Standard Product AO4419 Pb-free (meets ROHS Sony specifications). AO4419L Green Product ordering option. AO4419 AO4419L electrically identical.
-30V -9.7 (VGS -10V) RDS(ON) (VGS -10V) RDS(ON) (VGS -4.5V)
SOIC-8 View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum -9.7 -8.1
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4419
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-7A Forward Transconductance VDS=-5V, ID=-9.7A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-9.7A TJ=125°C -1.4 20.9 21.7 -0.7 -1.2 1573 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 26.4 VGS=-10V, VDS=-15V, ID=-9.7A 13.7 VGS=-10V, VDS=-15V, RL=1.5, RGEN=3 IF=-9.7A, dI/dt=100A/µs 44.2 22.2 25.2 14.1 1900 ±100 -2.7 Units
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-9.7A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted curve provides single pulse rating. 2005
FR-4 board with 2oz. Copper, still environment with A=25°C.
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4419
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-10V -ID(A) VGS=-3V -VDS (Volts) On-Region Characteristics -VGS(Volts) Figure Transfer Characteristics -3.5V 125°C 25°C VDS=-5V
Normalized On-Resistance RDS(ON) VGS=-4.5V Figure On-Resistance Drain Current Gate Voltage VGS=-10V
1.60 ID=-9.7A 1.40 VGS=-10V
1.20
VGS=-4.5V ID=-7A
1.00
0.80 Temperature (°C) Figure On-Resistance Junction Temperature
RDS(ON) 125°C -VGS (Volts) Figure On-Resistance Gate-Source Voltage 25°C ID=-9.7A
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 -VSD (Volts) Figure Body-Diode Characteristics 25°C 125°C
Alpha Omega Semiconductor, Ltd.
AO4419
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-VGS (Volts) (nC) Figure Gate-Charge Characteristics 2250 VDS=-15V ID=-9.7A Capacitance (pF) 2000 1750 1500 1250 1000 -VDS (Volts) Figure Capacitance Characteristics Coss Crss Ciss
100.0
TJ(Max)=150°C, A=25°C RDS(ON) limited 0.1s
10µs 100µs 10ms Power
TJ(Max)=150°C TA=25°C
(Amps)
10.0
-VDS (Volts) Figure Maximum Forward Biased Safe Operating Area (Note
0.001
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse 0.01 0.00001
0.0001
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
0.001
0.01
1000
Alpha Omega Semiconductor, Ltd.

AO4419 uses advanced trench technology provide excellent RDS(ON), gate

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