PDRB-28998-X045-01 Memory Module Part Number VS133-R512

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PDRB-28998-X045-01 Memory Module Part Number VS133-R512

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VS133-R512
PDRB-28998-X045-01
Memory Module Part Number
VS133-R512
Buffalo Technology
(1/7)
VS133-R512
PDRB-28998-X045-01
Description
168pin Registered DIMM PC133/CL=3
Module Specification
Item Capacity Physical Bank(s) Module Organization Module Type Speed Grade Interface Power Supply Voltage Burst Lengths DRAM Organization Part Contact Serial Specification 512MByte 72bit Registered PC133/CL=3 PC100/CL=2 LVTTL 3.3V±0.3V 1,2,4,8,Full 8bit SDRAM ZEY8RWF-A 168pin GOLD Flash Plating 2.00µm 0.05µm Support
Mechanical Design Module Pinout
Item Reference standard Mechanical Design Pinout 168Pin DIMM (PDRB-28998-X059-01) Y(PCB Height) 43.18 Undefined 4.52 MAX(Double Sided)
Mechanical Design Pinout
Block Diagram
Item Block Diagram Reference standard Block Diagram PC133/PC100 Registered DIMM(x8bitDRAM 2Bank) (PDRB-28998-X090-01)
Buffalo Technology
(2/7)
VS133-R512
PDRB-28998-X045-01
Electrical Specifications Absolute Maximum Ratings
Parameter Voltage Relative Supply Voltage Relative Power Dissipation Short Circuit Output Current Symbol Value -0.3~Vcc+0.3 (max 4.6) -0.3~4.6 Unit
Recommended Operating Conditions
Parameter Supply Voltage High Level Input Voltage Level Input Voltage Operating Ambient Temperature Symbol -0.3 Vcc+0.3 Unit
Capacitance
Parameter CKE0 CKE1 DQMB0~7 DQ0~DQ63 CB0~7 A,BA,/RAS,/CAS,/WE Symbol CICK1 CICK2 CICK3 CICK4 CIS1 CIS2 CIS3 CIS4 CICKE1 CICKE2 CIDQM1 COUT1 COUT2 Maximum Capacitance Unit
Input Capacitance
Input Capacitance
Input Capacitance Input Capacitance Input Output Capacitance Other Input Capacitance
Buffalo Technology
(3/7)
VS133-R512
PDRB-28998-X045-01
D.C. Characters
Parameter Operating current Symbol ICC1 ICC2P ICC2PS Precharge Standby current power down mode ICC2N ICC2NS Active standby current power down mode ICC3P ICC3PS Active standby current power down mode ICC3N ICC3NS Operating current (Burst mode) Auto refresh current Self refresh current Input leakage current Output High Voltage Output Voltage ICC4 ICC5 ICC6 Value Unit Test Condition Burst length=1, (min), IO=0mA, bank active VIL(max), 12ns VIL(max), CKE, VIH(min), 12ns (min), VIL(max), 12ns VIL(max), CKE, VIH(min), 12ns (min), (min) Io=0mA, bank active (min) 0.2V other pins under test=0V -2mA guarantee against this value.
2749
Precharge Standby current power down mode
1399 1039
1849 1309 2749 6529
A.C. Timing Characters
Parameter Clock Period /CAS Latency /CAS Latency Clock High Pulse Width Clock Pulse Width Input Setup Time Input Hold Time Output Valid From Clock /CAS Latency /CAS Latency Output Hold From Clock /RAS /CAS Delay /RAS Active Time /RAS Precharge Time Command Period Cycle Time Average Periodic Refresh Interval Mode Register cycle time tCLK tRCD tRAS tRRD tREF tMRC 67.5 1000 1000 100,000 Symbol Unit
Buffalo Technology
(4/7)
VS133-R512
PDRB-28998-X045-01
Serial Presence Detect (SPD) Data Structure
Byte
36-61 64-66 68-71 73-90 91-92 93-94 95-98 99-125
Function
Defines bytes written into serial memory module manufacturer Total bytes memory device Fundamental memory type (FPM, EDO, SDRAM.) addresses this assembly Column Addresses this assembly Module Banks this assembly Data Width this assembly Data Width continuation Voltage interface standard this assembly SDRAM Cycle time (highest latency) SDRAM Access from Clock (highest latency) DIMM Configuration type (non-parity, ECC) Refresh Rate/Type Primary SDRAM Width Error Checking SDRAM width Minimum Clock Delay Back Back Random Column Address Burst Lengths Supported Banks Each SDRAM Device CAS# Latency Latency Write Latency SDRAM Module Attributes SDRAM Device Attributes: General SDRAM Cycle time (2nd highest latency) SDRAM Access from Clock (2nd highest latency) SDRAM Cycle time (3rd highest latency) SDRAM Access from Clock (3rd highest latency) Minimum Precharge Time Activate Activate Min. Delay Minimum Pulse Width Density each bank module Command Address signal input setup time Command Address signal input hold time Data signal input setup time Data signal input hold time Superset Information (may used future) Data Revision Code Checksum bytes 0-62 Manufacturer's JEDEC code JEP-108E Manufacturing Location Manufacturer's Part Number Revision Code Manufacturing Date Assembly Serial Number Manufacturer Specific Data Intel specification frequency Intel Specification CAS# Latency support
Value
Function Supported
128Bytes 256Bytes SDRAM 2Banks 72bits LVTTL 7.5ns (CL=3) 5.4ns 7.8µs x8bit x8bit 1CLK Burst Lengths (1,2,4,8,FULL) 4Banks Latency =2,3 Latency Latency Registered with Supports Write1/Read Burst Supports Precharge Supports Auto-Precharge 10ns (CL=2) (CL=2) Support Support 20ns 15ns 20ns 45ns 256MB 1.5ns 0.8ns 1.5ns 0.8ns Undefined Checksum MELCO inc. Blank Undefined Undefined Undefined Undefined 100MHz Compatible Clock=0 =2,3 Undefined
128+ Unused storage locations
Buffalo Technology
(5/7)
VS133-R512
PDRB-28998-X045-01
Packing/Label Specification
Item Packing/Label Specification Reference standard Packing/Label Specification -for 5.25inchWidth DIMM (PDRB-28998-X062-01)
Buffalo Technology
(6/7)
VS133-R512
PDRB-28998-X045-01
Revision History
Rev. Date Jan.24.2003 Changes Issued J.Onisi
Buffalo Technology
(7/7)

PDRB-28998-X045-01 Memory Module Part Number VS133-R512

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