AO3418 uses advanced trench technology provide excellent RDS(ON), very
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AO3418, AO3418L Green Product N-Channel Enhancement Mode Field Effect Transistor
AO3418 uses advanced trench technology provide excellent RDS(ON), very gate charge operation with gate voltages 2.5V. This device suitable load switch applications. AO3418L Green Product offered lead-free package.
Features
RDS(ON) (VGS 10V) RDS(ON) (VGS 4.5V) RDS(ON) 155m (VGS 2.5V)
TO-236 (SOT-23) View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO3418, AO3418L
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=3.8A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=3.5A VGS=2.5V, ID=1A VDS=5V, ID=3.8A 11.7 0.81 0.001 Units
Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
0.55 14.5 10.2
SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge tD(on) tD(off) Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
VGS=4.5V, VDS=15V, ID=3.8A
VGS=10V, VDS=15V, RL=3.9, RGEN=6
IF=3.8A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=3.8A, dI/dt=100A/µs
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO3418, AO3418L
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
3.5V ID(A) VDS=5V
VGS=2.5V
125°C 25°C
(Volts) On-Region Characteristics
VGS(Volts) Figure Transfer Characteristics
RDS(ON) Figure On-Resistance Drain Current Gate Voltage ID=3.8A RDS(ON) (Volts) Figure On-Resistance Gate-Source Voltage 25°C 125°C VGS=10V VGS=4.5V VGS=2.5V
VGS=4.5V Normalized On-Resistance ID=3.5A
VGS=10V ID=3.8A
VGS=2.5V ID=1A
Temperature (°C) Figure On-Resistance Junction Temperature 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 (Volts) Figure Body-Diode Characteristics 125°C 25°C
Alpha Omega Semiconductor, Ltd.
AO3418, AO3418L
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VDS=15V ID=3.8A Capacitance (pF) (nC) Figure Gate-Charge Characteristics 100.0 TJ(Max)=150°C TA=25°C (Volts) Figure Capacitance Characteristics Coss Crss Ciss
(Volts)
TJ(Max)=150°C TA=25°C
10.0 (Amps)
0.1s 10ms
Power
RDS(ON) limited
10µs 100µs
(Volts) Figure Maximum Forward Biased Safe Operating Area (Note
0.001
0.01
1000 Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
0.001
0.01
1000
Alpha Omega Semiconductor, Ltd.
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