AO3402 uses advanced trench technology provide excellent RDS(ON), gate
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AO3402, AO3402L Green Product N-Channel Enhancement Mode Field Effect Transistor
AO3402 uses advanced trench technology provide excellent RDS(ON), gate charge operation with gate voltages 2.5V. This device suitable load switch applications. AO3402L( Green Product offered lead-free package.
Features
RDS(ON) (VGS 10V) RDS(ON) (VGS 4.5V) RDS(ON) 110m (VGS 2.5V)
TO-236 (SOT-23) View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25°C Power Dissipation TA=70°C Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead TA=25°C TA=70°C TSTG
Maximum
Units
Symbol
Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO3402, AO3402L
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=4A TJ=125°C VGS=4.5V, ID=3A VGS=2.5V, ID=2A VDS=5V, ID=4A Units
Static Drain-Source On-Resistance
Forward Transconductance IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
54.5 4.34 1.38
SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge tD(on) tD(off) Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=4.5V, VDS=15V, ID=4A
VGS=10V, VDS=15V, RL=3.75, RGEN=6
21.7
IF=4A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO3402, AO3402L
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
4.5V (Volts) On-Region Characteristics VGS=2.5V RDS(ON) Figure On-Resistance Drain Current Gate Voltage 1.0E+01 1.0E+00 RDS(ON) ID=2A 1.0E-01 125°C 1.0E-02 1.0E-03 1.0E-04 25°C 1.0E-05 (Volts) Figure On-Resistance Gate-Source Voltage 1.0E-06 (Volts) Figure Body-Diode Characteristics 25°C 125°C VGS=4.5V Normalized On-Resistance Temperature (°C) Figure On-Resistance Junction Temperature 2.5V ID(A) 125°C VGS=2V 25°C VDS=5V
VGS(Volts) Figure Transfer Characteristics
VGS=4.5V VGS=10V
VGS=2.5V
VGS=10V
Alpha Omega Semiconductor, Ltd.
AO3402, AO3402L
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics VDS=15V ID=4A Capacitance (pF) Ciss (Volts) Figure Capacitance Characteristics Coss Crss
100.0
TJ(Max)=150°C TA=25°C
TJ(Max)=150°C TA=25°C 100µs 0.1s 10ms 10µs Power
10.0 (Amps)
RDS(ON) limited
(Volts) Figure Maximum Forward Biased Safe Operating Area (Note
0.001
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
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