2SK3367 SWITCHING N-CHANNEL POWER DESCRIPTION 2SK3367 N

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2SK3367 SWITCHING N-CHANNEL POWER DESCRIPTION 2SK3367 N

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FIELD EFFECT TRANSISTOR
2SK3367
SWITCHING N-CHANNEL POWER
DESCRIPTION
2SK3367 N-Channel Field Effect Transistor designed DC/DC converter application notebook computers.
FEATURES
on-resistance RDS(on)1 MAX. (VGS RDS(on)2 12.0 MAX. (VGS RDS(on)3 14.0 MAX. (VGS Ciss Ciss 2800 TYP. Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER 2SK3367 2SK3367-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z)
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) Drain Current (Pulse)
Note
VDSS VGSS ID(DC) ID(pulse) Tstg
±144
Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Note Duty cycle
THERMAL RESISTANCE
Channel case Thermal Resistance Channel ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 3.13 °C/W °C/W
information this document subject change without notice. Before using this document, please confirm that this latest version.
products and/or types available every country. Please check with Electronics sales representative availability additional information.
Document D14257EJ3V0DS00 (3rd edition) Date Published August 2004 CP(K) Printed Japan
mark shows major revised points. 1999
2SK3367
ELECTRICAL CHARACTERISTICS 25°C)
CHARACTERISTICS Drain Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) di/dt A/µs TEST CONDITIONS 2800 1130 0.95 MIN. TYP. MAX. 12.0 14.0 UNIT
TEST CIRCUIT SWITCHING TIME
TEST CIRCUIT GATE CHARGE
D.U.T. Duty Cycle
Wave Form
Wave Form
D.U.T.
td(on)
td(off) toff
Data Sheet D14257EJ3V0DS
2SK3367
TYPICAL CHARACTERISTICS 25°C)
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
Percentage Rated Power
Total Power Dissipation
TOTAL POWER DISSIPATION CASE TEMPERATURE
Case Temperature
Case Temperature
DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
FORWARD BIAS SAFE OPERATING AREA 1000
Lim10
ID(DC)
ID(pulse)
Drain Current
Drain Current
25°C Single Pulse
Drain Source Voltage
FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed
Drain Source Voltage
Drain Current
0.01
150°C 125°C 75°C 25°C -25°C -40°C
0.001 0.0001
Gate Source Voltage
Data Sheet D14257EJ3V0DS
2SK3367
TRANSIENT THERMAL RESISTANCE PULSE WIDTH 1000
rth(t) Transient Thermal Resistance °C/W
Rth(ch-A) °C/W
Rth(ch-C) 3.13 °C/W
0.01 0.001 25°C Single Pulse 100m 1000
Pulse Width
RDS(on) Drain Source On-state Resistance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
Forward Transfer Admittance
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
1000 0.01 0.001 0.0001 0.0001 0.001 0.01 Pulsed 1000 -40°C -25°C 25°C 75°C 125°C 150°C
Drain Current
RDS(on) Drain Source On-state Resistance
Gate Source Voltage
VGS(off) Gate Source Cut-off Voltage
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
Pulsed
1000
Drain Current
Channel Temperature
Data Sheet D14257EJ3V0DS
2SK3367
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
Diode Forward Current
SOURCE DRAIN DIODE FORWARD VOLTAGE 1000
0.01 Pulsed
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE 10000
Ciss, Coss, Crss Capacitance
td(on), td(off), Switching Time
SWITCHING CHARACTERISTICS 10000
Ciss
td(off)
1000
1000 Coss Crss
td(on)
0.01
Drain Current
Drain Source Voltage
REVERSE RECOVERY TIME DRAIN CURRENT 1000
Reverse Recovery Time
Drain Source Voltage
Diode Current
Gate Charge
Gate Source Voltage
di/dt A/µs
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Data Sheet D14257EJ3V0DS
2SK3367
PACKAGE DRAWINGS (Unit:
TO-251 (MP-3) TO-252 (MP-3Z)
1.5-0.1
+0.2
6.5±0.2 5.0±0.2
1.6±0.2
2.3±0.2 0.5±0.1
MAX.
6.5±0.2 5.0±0.2
1.5-0.1
+0.2
2.3±0.2 0.5±0.1
5.5±0.2
13.7 MIN.
MIN.
1.1±0.2
+0.2
0.5-0.1
0.75
0.5-0.1
1.Gate 2.Drain 3.Source 4.Fin (Drain)
+0.2
MAX. MAX. Gate Drain Source (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
Data Sheet D14257EJ3V0DS
1.1±0.2
MIN.
5.5±0.2 10.0 MAX.
MIN. TYP.
2SK3367
information this document current August, 2004. information subject change without notice. actual design-in, refer latest publications Electronics data sheets data books, etc., most up-to-date specifications Electronics products. products and/or types available every country. Please check with Electronics sales representative availability additional information. part this document copied reproduced form means without prior written consent Electronics. Electronics assumes responsibility errors that appear this document. Electronics does assume liability infringement patents, copyrights other intellectual property rights third parties arising from Electronics products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights Electronics others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. Electronics assumes responsibility losses incurred customers third parties arising from these circuits, software information. While Electronics endeavors enhance quality, reliability safety Electronics products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects Electronics products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment anti-failure features. Electronics products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only Electronics products developed based customerdesignated "quality assurance program" specific application. recommended applications Electronics product depend quality grade, indicated below. Customers must check quality grade each Electronics product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade Electronics products "Standard" unless otherwise expressly specified Electronics data sheets data books, etc. customers wish Electronics products applications intended Electronics, they must contact Electronics sales representative advance determine Electronics' willingness support given application. (Note) "NEC Electronics" used this statement means Electronics Corporation also includes majority-owned subsidiaries. "NEC Electronics products" means product developed manufactured Electronics defined above).
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2SK3367 SWITCHING N-CHANNEL POWER DESCRIPTION 2SK3367 N

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