REJ03G0007-0200Z (Previous ADE-208-1547A(Z)) Rev.2.00 Aug.01.2003

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REJ03G0007-0200Z (Previous ADE-208-1547A(Z)) Rev.2.00 Aug.01.2003

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H5N3003P
REJ03G0007-0200Z (Previous ADE-208-1547A(Z)) Rev.2.00 Aug.01.2003
on-resistance leakage current High Speed Switching
Outline
TO-3P
Gate Drain (Flange) Source
Rev.2.00, Aug.01.2003, page
H5N3003P
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel case Thermal Impedance Channel temperature Storage temperature Symbol VDSS VGSS (pulse) (pulse) Note1 IAPNote3
Note2 Note1
Ratings 0.833 +150
Unit
ch-c Tstg
Notes: duty cycle Value 25°C 150°C
Rev.2.00, Aug.01.2003, page
H5N3003P
Electrical Characteristics
25°C)
Item Symbol 0.058 5150 ±0.1 Unit Test Conditions 10mA, 300V, ±30V, 10V, 20A, 10VNote4 20A, VGS= 10VNote4 1MHz Rg=10 240V 40A, 40A, diF/dt=100A/µs
Drain source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate source leak current Gate source cutoff voltage Forward transfer admittance Static drain source state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate source charge Gate drain charge Body-drain diode forward voltage IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) td(off)
Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Notes: Pulse test
Rev.2.00, Aug.01.2003, page
H5N3003P
Main Characteristics
Power Temperature Derating Maximum Safe Operation Area
1000
this area
Operation limited RDS(on)
Channel Dissipation
Drain Current
25°C 1000 Drain Source Voltage
(°C)
Case Temperature
Typical Output Characteristics Pulse Test
Typical Transfer Characteristics Pulse Test
Drain Current
Drain Current
75°C
25°C -25°C Gate Source Voltage
Drain Source Voltage
Rev.2.00, Aug.01.2003, page
H5N3003P
Drain Source Saturation Voltage Gate Source Voltage
Drain Source Saturation Voltage VDS(on)
Pulse Test
Drain Source State Resistance RDS(on)
Static Drain Source State Resistance Drain Current Pulse Test V,15
0.05
0.02
0.01 Gate Source Voltage Drain Current
Static Drain Source State Resistance RDS(on)
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature Pulse Test 0.16
Forward Transfer Admittance Drain Current -25°C 75°C Pulse Test 25°C
0.12 0.08
0.04
Case Temperature (°C)
Drain Current
Rev.2.00, Aug.01.2003, page
H5N3003P
Body-Drain Diode Reverse Recovery Time 1000
50000 20000
Typical Capacitance Drain Source Voltage Ciss
Reverse Recovery Time (ns)
Capacitance (pF)
10000 5000 2000 1000
Coss
25°C Reverse Drain Current
Crss Drain Source Voltage
Dynamic Input Characteristics
10000
Switching Characteristics duty
Switching Time (ns)
Gate Source Voltage
Drain Source Voltage
1000
d(off)
d(on)
Gate Charge (nC)
Drain Current
Rev.2.00, Aug.01.2003, page
H5N3003P
Reverse Drain Current Source Drain Voltage
Gate Source Cutoff Voltage GS(off)
Gate Source Cutoff Voltage Case Temperature 10mA
Reverse Drain Current
0.1mA
Pulse Test
(°C)
Source Drain Voltage
Case Temperature
Switching Time Test Circuit Monitor D.U.T. Vout Vout Monitor
Waveform
td(off)
td(on)
Rev.2.00, Aug.01.2003, page
H5N3003P
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
25°C
0.05
c(t) 0.833°C/W, 25°C
0.03
0.02
0.01
Pulse Width
Rev.2.00, Aug.01.2003, page
H5N3003P
Package Dimensions
January, 2003
15.6
Unit:
14.9
19.9
18.0
5.45
5.45
Package Code JEDEC JEITA Mass (reference value) TO-3P Conforms
Rev.2.00, Aug.01.2003, page
Sales Strategic Planning Div.
Keep safety first your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Renesas Technology Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap.
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REJ03G0007-0200Z (Previous ADE-208-1547A(Z)) Rev.2.00 Aug.01.2003

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