ADE-208-1516D 5th. Edition 2002 Features on-resistance RDS(on) =4
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Top Searches for this datasheet
H7N0307LD, H7N0307LS, H7N0307LM
ADE-208-1516D 5th. Edition 2002 Features
on-resistance RDS(on) =4.6 typ. drive current gate drive device driven from source
Outline
LDPAK
H7N0307LS
H7N0307LM Gate Drain Source Drain
H7N0307LD
H7N0307LD, H7N0307LS, H7N0307LM
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel Case Thermal Impedance Channel Ambient Thermal Impedance Channel temperature Storage temperature Notes: duty cycle Value 25°C Symbol VDSS VGSS ID(pulse)
Note Note
Ratings 1.39 +150
Unit °C/W °C/W
ch-c ch-a Tstg
Rev.4, 2002, page
H7N0307LD, H7N0307LS, H7N0307LM
Electrical Characteristics
25°C)
Item Symbol |yfs| Ciss Coss Crss td(on) td(off) 2500 0.92 11.5 diF/ A/µs Unit Test Conditions ±100 =0.33 =4.7
Drain source breakdown voltage V(BR)DSS Gate source breakdown voltage Gate source leak current Zero gate voltege drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate source charge Gate drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Pulse test V(BR)GSS IGSS IDSS VGS(off) RDS(on)
Rev.4, 2002, page
H7N0307LD, H7N0307LS, H7N0307LM
Main Characteristics
Power Temperature Derating
Maximum Safe Operation Area
Channel Dissipation
Drain Current
Operation this area limited DS(on) 25°C shot Pulse
(°C)
Case Temperature
0.01 Drain Source Voltage
Typical Output Characteristics
Typical Transfer Characteristics Pulse Test
Pulse Test
Drain Current
25°C 75°C -25°C
Drain Current
Drain Source Voltage
Gate Source Voltage
Rev.4, 2002, page
H7N0307LD, H7N0307LS, H7N0307LM
Drain Source Saturation Voltage Gate Source Voltage
0.20
Pulse Test
0.16
Drain Source State Resistance RDS(on)
VDS(on)
Static Drain Source State Resistance Drain Current Pulse Test Drain Current
Drain Source Voltage
0.12
0.08 Gate Source Voltage
0.04
Drain Source State Resistance RDS(on)
Pulse Test Case Temperature (°C)
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature
Forward Transfer Admittance Drain Current 25°C Pulse Test -25°C 75°C
Drain Current
Rev.4, 2002, page
H7N0307LD, H7N0307LS, H7N0307LM
Body-Drain Diode Reverse Recovery Time 1000 Typical Capacitance Drain Source Voltage 10000 3000 1000 Coss Crss Ciss
Reverse Recovery Time (ns)
Reverse Drain Current
Capacitance (pF)
Drain Source Voltage
Dynamic Input Characteristics
Switching Characteristics
Switching Time (ns)
d(on) d(off)
Drain Source Voltage
Gate Source Voltage
Gate Charge (nc)
Drain Current
duty
Rev.4, 2002, page
H7N0307LD, H7N0307LS, H7N0307LM
Reverse Drain Current Souece Drain Voltage
Reverse Drain Current
Pulse Test Source Drain Voltage
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
25°C
0.05 0.02 puls
c(t) 1.38°C/ 25°C
0.03
0.01
Pulse Width
Rev.4, 2002, page
H7N0307LD, H7N0307LS, H7N0307LM
Switching Time Test Circuit Monitor D.U.T. Vout td(on) td(off) Vout Monitor Switching Time Waveform
Rev.4, 2002, page
H7N0307LD, H7N0307LS, H7N0307LM
Package Dimensions
H7N0307LD
Unit:
10.2
(1.4)
4.44 0.15
0.86
2.54
2.54
11.0
1.37
11.3
10.0
2.49
Hitachi Code JEDEC JEITA Mass (reference value)
LDPAK
Rev.4, 2002, page
H7N0307LD, H7N0307LS, H7N0307LM
H7N0307LS
Unit:
4.44 10.2
(1.4)
10.0
(1.5)
(1.5)
1.37
2.49
0.86
2.54
2.54
Hitachi Code JEDEC JEITA Mass (reference value)
LDPAK (S)-(1)
Rev.4, 2002, page
H7N0307LD, H7N0307LS, H7N0307LM
H7N0307LM
Unit:
4.44 10.2
(1.4)
10.0
(1.5)
(2.3)
1.37
2.49
2.54
2.54
0.86
Hitachi Code JEDEC JEITA Mass (reference value)
LDPAK (S)-(2) 1.35
Rev.4, 2002, page
H7N0307LD, H7N0307LS, H7N0307LM
Disclaimer
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
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Hitachi, Ltd.
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further information write
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Copyright Hitachi, Ltd., 2002. rights reserved. Printed Japan.
Colophon
Rev.4, 2002, page
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