Proximity Switch Bipolar Features Lower open-loop curre

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Proximity Switch Bipolar Features Lower open-loop curre

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Proximity Switch
Bipolar
Features
Lower open-loop current consumption; Lower output saturation voltage temperature dependence switching distance lower compensation resonant circuit (temperature coefficient) easier sensitivity higher, that larger switching distances possible coils lower quality used switching hysteresis remains constant regards temperature, supply voltage switching distance even functions without external integrating capacitor. With external capacitor with combination) good noise immunity achieved outputs temporarily short-circuit proof (approx. depending package) outputs disabled when approx. enabled when oscillator stabilizes (from Higher switching frequencies obtained Miniature package P-DSO-8-1 P-DIP-8-1
P-DIP-14-1
P-DSO-14-1
Semiconductor Group
09.94
Configurations (top view) devices contain functions necessary design inductive proximity switches. approaching standard metal plate coil, resonant circuit damped outputs switched. Operation Schematic: types have been developed from type outstanding following characteristics: Logic Functions Oscillator damped damped Outputs
Semiconductor Group
Block Diagram Standard Turn-ON Delay Referred
Semiconductor Group
Absolute Maximum Ratings Parameter Supply voltage Output voltage Output current Distance, hysteresis resistance Capacitances Junction temperature Storage temperature range Thermal resistance system Operating Range Supply voltage Oscillator frequency Ambient temperature Characteristics Parameter Open-loop current consumption Reference voltage1) L-output voltage output H-output current output Threshold Hysteresis Turn-ON delay1) Switching frequency
Symbol Limit Values RDi, Tstg (135)2) (200)2)
Unit
fOSC
303) 0.015
Symbol min. VREF
Limit Values typ. max. (1.0)2)
Unit
Test Condition outputs open IREF<
0.04 0.15 0.10 0.35 0.22 0.75
ms/µF
only Values parenthesis apply only Operation voltages less than (between approx. possible, VREF connected this case VREF longer internally stabilized. Additionally, "turn-on delay" applied follows: turn-on delay needed, this connected however, turn-on delay required, charge current adjusted with external resistor between this (recommended value
Semiconductor Group
Oscilator
Turn-ON Delay
Integrating Capacitor
Outputs
Schematic Circuit Diagram
Semiconductor Group
Application Circuit
Semiconductor Group
Resonant circuit Hysteresis adjustment Distance adjustment Temperature compensation resonant circuit; possibly with series resistance purpose adjustment. diode absolutely necessary. Whether used depends temperature coefficient resonant circuit. Integration element. (integrating capacitance) recommend capacitor typ. increase noise immunity this capacitor substituted circuit with, e.g., Delay capacitor
Dimensioning Examples Accordance with CENELEC Standard (flush) Ferrite core Number turns Cross section wire (STYROFLEX®) fOSC (Metal) (7.35 3.6) 1000 appr. (14.4 7.5) 0.05 appr. 8.9) appr.
Semiconductor Group

Proximity Switch Bipolar Features Lower open-loop curre

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