Preliminary Data used current mirror Good thermal coupling matching Hi
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Silicon Double Transistors
Preliminary Data used current mirror Good thermal coupling matching High current gain emitter-saturation voltage
Type
Marking
Ordering Code (tape reel) Q62702-C2155 Q62702-C2156 Q62702-C2157
Configuration
Package1) SOT-143
Maximum Ratings Parameter Collector-emitter voltage (transistor Collector-base voltage (open emitter) (transistor Emitter-base voltage Collector current Collector peak current Base peak current (transistor Total power dissipation, °C2) Junction temperature Storage temperature range Thermal Resistance Junction ambient2) Junction soldering point
Symbol VCE0 VCB0 VEBS Ptot Tstg
Values
Unit
detailed information chapter Package Outlines. Package mounted epoxy mm/6
Semiconductor Group
07.94
Electrical Characteristics unless otherwise specified. Parameter Symbol min. characteristics transistor Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-base cutoff current current gain1) V(BR)CE0 V(BR)CB0 V(BR)EBS ICB0 VCEsat VBEsat Values typ. max. Unit
Collector-emitter saturation voltage1) Base-emitter saturation voltage1) Base-emitter voltage
Pulse test conditions:
Semiconductor Group
Electrical Characteristics unless otherwise specified. Parameter Symbol min. characteristics transistor Base-emitter forward voltage Matching transistor transistor VCE1 Thermal coupling transistor transistor T21) Maximum current thermal stability characteristics transistor Transition frequency Collector-base capacitance Input capacitance Noise figure kHz, Input impedance Open-circuit reverse voltage transfer ratio Short-circuit forward current transfer ratio Open-circuit output admittance Cibo VBES Values typ. max. Unit
h11e h12e h21e h22e
Without emitter resistor. Device mounted alumina 16.5
Semiconductor Group
Test circuit current matching
Note: Voltage drop contacts:
Characteristic determination VCE1 specified range with parameter under condition
Note: with emitter resistors
Semiconductor Group
Total power dissipation Ptot (TA*; Package mounted epoxy
Permissible pulse load Ptot max/Ptot (tp)
Semiconductor Group
Silicon Double Transistors
Preliminary Data used current mirror Good thermal coupling matching High current gain emitter-saturation voltage
Type
Marking
Ordering Code (tape reel) Q62702-C2158 Q62702-C2159 Q62702-C2160
Configuration
Package1) SOT-143
Maximum Ratings Parameter Collector-emitter voltage (transistor Collector-base voltage (open emitter) (transistor Emitter-base voltage Collector current Collector peak current Base peak current (transistor Total power dissipation, °C2) Junction temperature Storage temperature range Thermal Resistance Junction ambient2) Junction soldering point
Symbol VCE0 VCB0 VEBS Ptot Tstg
Values
Unit
detailed information chapter Package Outlines. Package mounted epoxy mm/6
Semiconductor Group
07.94
Electrical Characteristics unless otherwise specified. Parameter Symbol min. characteristics transistor Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-base cutoff current current gain1) V(BR)CE0 V(BR)CB0 V(BR)EBS ICB0 VCEsat VBEsat Values typ. max. Unit
Collector-emitter saturation voltage1) Base-emitter saturation voltage1) Base-emitter voltage
Pulse test conditions:
Semiconductor Group
Electrical Characteristics unless otherwise specified. Parameter Symbol min. characteristics transistor Base-emitter forward voltage Matching transistor transistor VCE1 Thermal coupling transistor transistor T21) Maximum current thermal stability characteristics transistor Transition frequency Collector-base capacitance Input capacitance Noise figure kHz, Input impedance Open-circuit reverse voltage transfer ratio Short-circuit forward current transfer ratio Open-circuit output admittance Cibo VBES Values typ. max. Unit
h11e h12e h21e h22e
Without emitter resistor. Device mounted alumina 16.5
Semiconductor Group
Test circuit current matching
Note: Voltage drop contacts:
Characteristic determination VCE1 specified range with parameter under condition
Note: with emitter resistors
Semiconductor Group
Total power dissipation Ptot (TA*; Package mounted epoxy
Permissible pulse load Ptot max/Ptot (tp)
Semiconductor Group
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