general applications High collector current High current gain collecto
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general applications High collector current High current gain collector-emitter saturation voltage Complementary types: 817, (NPN)
Type 807-16 807-25 807-40 808-16 808-25 808-40
Marking
Ordering Code Q62702-C1735 Q62702-C1689 Q62702-C1721 Q62702-C1736 Q62702-C1504 Q62702-C1692
Configuration
Package1) SOT-23
detailed information chapter Package Outlines.
Semiconductor Group
07.94
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction ambient1) Junction soldering point
Symbol VCE0 VCB0 VEB0 Tstg
Values
Unit
Total power dissipation, Ptot
Package mounted epoxy mm/6
Semiconductor Group
Electrical Characteristics unless otherwise specified. Parameter Symbol min. characteristics Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage, Collector cutoff current Emitter cutoff current, current gain1) 807-16, 808-16 807-25, 808-25 807-40, 808-40 807-16, 808-16 807-25, 808-25 807-40, 808-40 Collector-emitter saturation voltage1) Base-emitter saturation voltage1) characteristics Transition frequency Output capacitance Input capacitance
Values typ. max.
Unit
V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 IEB0 VCEsat VBEsat
Cobo Cibo
Pulse test:
Semiconductor Group
Total power dissipation Ptot (TA*; Package mounted epoxy
Transition frequency (IC)
Permissible pulse load Ptot max/Ptot (tp)
Collector cutoff current ICB0 (TA) VCB0
Semiconductor Group
Base-emitter saturation voltage (VBEsat)
Collector-emitter saturation voltage (VCEsat)
current gain (IC)
Semiconductor Group
Silicon Transistors
general applications High collector current High current gain collector-emitter saturation voltage Complementary types: 807, (PNP)
Type 817-16 817-25 817-40 818-16 818-25 818-40
Marking
Ordering Code Q62702-C1732 Q62702-C1690 Q62702-C1738 Q62702-C1739 Q62702-C1740 Q62702-C1505
Configuration
Package1) SOT-23
detailed information chapter Package Outlines.
Semiconductor Group
07.94
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction ambient1) Junction soldering point
Symbol VCE0 VCB0 VEB0 Tstg
Values
Unit
Total power dissipation, Ptot
Package mounted epoxy mm/6
Semiconductor Group
Electrical Characteristics unless otherwise specified. Parameter Symbol min. characteristics Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage, Collector cutoff current Emitter cutoff current, current gain1) 817-16, 818-16 817-25, 818-25 817-40, 818-40 817-16, 818-16 817-25, 818-25 817-40, 818-40 Collector-emitter saturation voltage1) Base-emitter saturation voltage1) characteristics Transition frequency Output capacitance Input capacitance
Values typ. max.
Unit
V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 IEB0 VCEsat VBEsat
Cobo Cibo
Pulse test:
Semiconductor Group
Total power dissipation Ptot (TA*; Package mounted epoxy
Transition frequency (IC)
Permissible pulse load Ptot max/Ptot (tp)
Collector cutoff current ICB0 (TA) VCB0
Semiconductor Group
Base-emitter saturation voltage (VBEsat)
Collector-emitter saturation voltage (VCEsat)
current gain (IC)
Semiconductor Group
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