Elektrische Eigenschften Electrical properties Werte Maximum rate
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Elektrische Eigenschften Electrical properties
Werte Maximum rated values Periodische Spitzensperrspannung repetitive peak forward reverse voltage non-repetitive peak reverse voltage forward current Dauergrenzstrom mean forward current surge foward current
=100°C =86°C 25°C, max, 25°C, max,
VRRM
1600 1800 2000 1700 1900 2100 5600 4600 12750 10470 156800 105800 81280 54810
25°C.Tvj
VRSM
IFRMSM IFAVM IFSM
Grenzlastintegral
25°C, 10ms max, 10ms 25°C,
max,
Charakteristische Werte Characteristic values
forward voltage Schleusenspannung threshold voltage Ersatzwiderstand forward slope resistance Typischer Wert typical value forward recovery voltage forward recovery time Sperrstrom reverse current peak reverse recovery current recovered charge reverse recovered time Sanftheit Softness
max, 1200
V(TO) VFRM
max.
2,25
747-2 diF/dt=50A/µs, vR=0V 747-2, Methode method max, iFM=1200A diF/dt=50 A/µs, vR=0V 25°C, vR=VRRM
max, VRRM 747-2, Tvj=Tvj =410A,-diF/dt=50A/µs vR=100V, vRM<=200 747-2, Tvj=Tvj =410 A,-diF/dt=50A/µs vR=100V, vRM<=200 747-2, Tvj=Tvj =410A,-diF/dt=50A/µs vR=100 vRM<=200V =A,-diF/dt=A/µs vR<=0,5 VRRM, vRM=0,8 VRRM
max. max.
µs/A
Richtwert obere Streubereichsgrenze Upper limit scatter range (standard value) Richtwert untere Streubereichsgrenze Lower limit scatter range (standard value)
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cooling surface beidseitig two-sided, =180°sin beidseitig two-sided, Anode anode, =180°sin Anode anode, Kathode cathode, =180°sin Kathode cathode,
Thermische Eigenschaften Thermal properties
Innerer thermal resitance, junction case RthJC max. 0,08 max. 0,075 max. 0,125 max. 0,12 max. 0,205 max. RthCK max. 0,015 max. 0,030 -40.+150 -40.+150 °C/W °C/W °C/W °C/W °C/W °C/W °C/W °C/W
thermal resitance, case heatsink Sperrschichttemperatur max. junction temperature Betriebstemperatur operating temperature Lagertemperatur storage temperature
cooling surface beidseitig two-sided einseitig single-sided
Mechanische Eigenschaften Mechanical properties
siehe Anlage case, appendix Si-Element Druckkontakt Si-pellet with pressure contact clamping force Gewicht weight Kriechstrecke creepage distance Feuchteklasse humidity classification Schwingfestigkeit vibration resistance
40040
Seite page
Durchmesser/diameter 21mm
typ.
3,2.7,6 5x9,81
50Hz
heatsinks: K0,12F K0,17F K0,36S KL42
dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. gilt Verbindung Technischen technical Information specifies semiconductors devices promises characteristics. valid combination with belonging technical notes. SZ-M 08.04.87 Seite/page
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Analytische Elemente transienten ZthJC Analytical ementes transient thermal impedance ZthJC Pos.n 0,00955 0,00862 0,028 0,00642 0,0233 0,00883 0,0319
cooling
0,03159 0,081 0,0412 0,0897 0,0307 0,0778
0,025 0,546 0,06262 3,96 0,0722 2,04
beidseitig two-sided anodenseitig anode-sided kathodenseitig cathode-sided
Rthn [°C/W] 0,00024
0,000535 0,00156 0,00952
Rthn [°C/W] 0,00024
0,000537 0,00155 0,00969 0,00158
Rthn [°C/W] 0,00027 0,00053
0,07831 4,86
Analytische Funktion analytical function ZthJC
Rthn
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2.000
1.800
1.600
1.400
1.200
1.000
Limiting 0n-state characteristic iF=f(vF)
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