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2601NH 0°C. VRRM IFRMSM IFAVM IFSM 9000 2700 1400 1720 23000 2200


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Puls Power Diode Pulse Power Diode
2601NH
0°C. VRRM IFRMSM IFAVM IFSM 9000 2700 1400 1720 23000 22000 2645 2420
Elektrische Eigenschaften Electrical properties Werte Maximum rated values Periodische Kenndaten repetitive peak reverse voltages maximum on-state current Dauergrenzstrom average on-state current surge current Grenzlastintegral
Elektrische Eigenschaften
85°C, f=50Hz 60°C, f=50Hz max, max,
Charakteristische Werte Characteristic values Gleichsperrspannung continuous direct reverse voltage on-state voltage Schleusenspannung threshold voltage Ersatzwiderstand slope resistance on-state characteristic 1500A 4000A
failure rate 4000A
VR(D) V(TO) typ.
estimate value
4100 5,07 1,11 0,99 1,07
typ. max. typ. max. typ. max.
max.
Sperrstrom reverse current recovered charge peak reverse recovery current Ausschaltverlust Energie turn-off energy
max, VRRM
0,702619 6,269E-4 -0,082838 0,040292 0,722379 6,9108E-4 -0,080219 0,04219 max. max. 12000 max. max. 2000
Tvjmax 2500A, -di/dt 1000A/µs, 2200V, tint 18µs,
Eoff
prepared Schneider approved Keller
date publication: revision:
2003-10-24
Seite/page
Puls Power Diode Pulse Power Diode
2601NH
two-sided, Thermischebeidseitig two-sided, 180°sin Eigenschaften beidseitig Anode anode, Mechanische Eigenschaften Kathode cathode, cooling surface beidseitig two-sided einseitig single-sided cooling surface RthJC max. 0,00827 °C/W max. 0,0075 °C/W max. 0,0133 °C/W max. 0,0172 °C/W
Thermische Eigenschaften Thermal properties Innerer thermal resistance, junction case
thermal resistance, case heatsink Sperrschichttemperatur maximum junction temperature Betriebstemperatur operating temperature Lagertemperatur storage temperature
RthCH
max. max.
Tstg
0,0025 °C/W 0,0050 °C/W 0.+140
-40.+150
Mechanische Eigenschaften Mechanical properties siehe Anlage case, annex Si-Element Druckkontakt Si-pellet with pressure contact Anpresskraft clamping force Gewicht weight Kriechstrecke creepage distance Luftstrecke distance Feuchteklasse humidity classification Schwingfestigkeit vibration resistance 40040 typ.
Seite page 76DNH90 36.52
1350
diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. gilt Verbindung technischen This data sheet specifies semiconductor devices, promises characteristics. valid combination with belonging technical notes.
Seite/page
Puls Power Diode Pulse Power Diode
2601NH
Anode/Anode
Kathode/Cathode
Seite/page
Puls Power Diode Pulse Power Diode
2601NH
Analytische Elemente transienten thJC Analytical elements transient thermal impedance thJC Pos. Rthn [°C/W]
0,00295 0,78008 0,00804 5,11029 0,0121 4,97289
Werte R,T-Werte beidseitig two-sided
0,002 0,13092 0,00081 0,35916 0,0004 0,48885
0,00154 0,02165 0,00239 0,09623 0,00244 0,12071
0,00098 0,00514 0,0016 0,01197 0,00155 0,01530
0,00003 0,00104 0,00046 0,00332 0,00071 0,00427
Rthn [°C/W]
anodenseitg anode-sided
Rthn [°C/W]
kathodenseitig cathode-sided
Analytische Funktion Analytical function:
ZthJC
nmax
Rthn
0,03
0,025
0,02
0,015 [K/W]
0,01
0,005
0,001
0,01
Transienter innerer Transient thermal impedance thJC f(t) Beidseitige Two-sided cooling Anodenseitige Anode-sided cooling Kathodenseitige Cathode-sided cooling
Seite/page
Puls Power Diode Pulse Power Diode
2601NH
4500
Diagramme Diagramme
4000
Durchlasskennlinie
3500
3000
typ.
max.
2500 2000 1500 1000
Limiting on-state characteristic f(vF)
Seite/page
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