TELEFUNKEN Semiconductors 06.96 Contents (continued) Handlin
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TELEFUNKEN Semiconductors 06.96
Contents (continued)
Handling Instructions Protection against ElectrostaticDamage Mounting Precautions Cleaning Quality Information General Quality Flow Chart Diagram Process Flow Charts Assembly Flow Chart Standard Opto-Coupler Qualification Release Statistical Methods Prevention Reliability Average Outgoing Quality (AOQ) Early Failure Rate (EFR) Mean Time Failure (MTTF) Activation Energy Safety Long-Term Failure Rate (LFR) Optocouplers Switching Power Supplies 0884 Facts Information Layout Design Rules TEMIC Optocoupler Program Construction Overview 6-PIN Isolators Appendix Application Optoelectronic Reflex Sensors TCRT1000, TCRT5000, TCRT9000, CNY70 Drawings Sensors Optoelectronic Sensors General Principles Parameters Practical Reflex Sensors Coupling Factor, Working Diagram Resolution, Trip Point Sensitivity, Dark Current Crosstalk Ambient Light Application Examples, Circuits Application Example with Dimensioning Circuits with Reflex Sensors Cross Reference List Opto Data Sheets Opto Isolators Opto Sensors Addresses
TELEFUNKEN Semiconductors 06.96
Optoisolators
Characteristics Package Type VRMS IF=10 V(BRCEO) IC=1 VCEsat toff RL=100
Optoisolators with Transistor Output
4N252) 4N262) 4N272) 4N282) 4N352) 4N362) 3750 3750 3750 3750 3750 3750 100(>20) 100(>20) 100(>10) 100(>10) 150(>100) 150(>100) <0.5 <0.5 <0.5 <0.5 <0.3 <0.3
4N372) 3750 150(>100) <0.3 Water-proof construction: Suitable cleaning process with pure water. your orders, attach order-no. (e.g., 4N25(G)VS)
Optoisolators with Darlington Output
4N322) 4N332)
Water-proof
3750 3750
>500 >500
construction: Suitable cleaning process with pure water. your orders, attach order-no. (e.g., 4N25(G)VS)
Multichannel Optoisolators with Transistor Output
MCT6 CNY74-2 MCT62 K827P CNY74-4 K847P
2800 2800 2800 2800 2800 2800
50-600 >100
<0.3 <0.3 <0.3 <0.3
50-600 50-600 50-600
Surface Mount Optoisolators with Transistor Output
MOC205 MOC206 MOC207 TCMT1020 TCMT1021 TCMT1022 TCMT1023 TCMT1024 2500 2500 40-80 63-125 100-200 40-80 63-125 100-200 160-320 <0.3
TELEFUNKEN Semiconductors 06.96
Characteristics Package Type VRMS IF=10 V(BRCEO) IC=1 VCEsat toff RL=100
Surface Mount Optoisolators with Transistor Output
MOC211 MOC212 MOC213 MOC215 MOC216 MOC217 TCMT1030 TCMT1031 TCMT1032 TCMT1033 TCMT1034
2500 >100 >100 2500 >100 >200 <0.3 <0.3
Metal Optoisolators
CNY18III CNY18IV CNY18V K120P 3C91C 1000 25-50 40-80 60-120 (>25) (>40) <0.2 <0.2 <0.2 <0.3 <0.3
3C92C
(>40)
<0.3
Characteristics Package Type IF=10 V(BRCEO) IC=1 VCEsat toff RL=100
Optoisolators Intrinsic Safety Requirements, with Transistor Output
CNY21Exi Ex-90.C.2106U CNY65Exi Ex-81/2158U 10000 80(>50) <0.3
11600
63-125
<0.3
TELEFUNKEN Semiconductors 06.96
Characteristics Package Type IF=10 V(BRCEO) IC=1 VCEsat toff RL=100
0884 Approved Optoisolators
Standard Optoisolators with Transistor Output
4N25(G)V1) 4N35(G)V1)
Water-proof
6000
100(>20)
<0.5
6000
150(>100)
<0.3
construction: Suitable cleaning process with pure water. your orders, attach order-no. (e.g., 4N25(G)VS)
Base Connection
TCDT1110(G) 6000 150(>100) <0.3
Order devices e.g., TCDT1110(G) with wide spaced lead form, board spacing safety requirements!
With Ranking
CQY80N(G)1) CNY17(G)-11) CNY17(G)-21) 6000 6000 6000 90(>50) 40-80 63-125 <0.3 <0.3 <0.3
CNY17(G)-31) 6000 100-200 <0.3 Water-proof construction: Suitable cleaning process with pure water. your orders, attach order-no., e.g., 4N25(G)VS
Base Connection
TCDT1100(G) TCDT1101(G) TCDT1102(G) TCDT1103(G) 6000 6000 6000 6000 90(>50) 40-80 63-125 100-200 <0.3 <0.3 <0.3 <0.3
With Ranking High Output Voltage
CNY75(G)A1) CNY75(G)B1) CNY75(G)C1)
Water-proof
6000 6000 6000
63-125 100-200 160-320
<0.3 <0.3 <0.3
construction: Suitable cleaning process with pure water. your orders, attach order-no. (e.g., 4N25(G)VS)
TELEFUNKEN Semiconductors 06.96
Characteristics Package Type IF=10 V(BRCEO) IC=1 VCEsat toff RL=100
Base Connection
TCDT1120(G) TCDT1122(G) TCDT1123(G) 6000 6000 6000 63-125 100-200 <0.3 <0.3 <0.3
TCDT1124(G) 6000 160-320 <0.3 Order devices, e.g., CNY75GA with wide spaced 0.4" lead form, board spacing safety requirements!
Optoisolators High Isolation Voltages
CNY21N CNY64 CNY64A CNY64B CNY65 CNY65A CNY65B CNY66 8000 8000 8000 8000 60(>25) 50-300 63-125 100-200 50-300 63-125 100-200 50-300 <0.3 <0.3 <0.3 <0.3
Characteristics Package Type VIOVDRM ITRMS dv/dt V/ms
Optoisolators with Triac Driver Output
K3010P(G) K3011P(G) K3012P(G) K3020P(G) K3021P(G) K3022P(G) 6000
K3023P(G) Order devices e.g., K3011PG with wide spaced lead form, board spacing safety requirements! 0884 certificate applied
TELEFUNKEN Semiconductors 06.96
Optical Sensors
Characteristics Package Type V(BR)CEO VCEsat
Reflective Optical Sensors
CNY70
TCRT1000
>0.3
>1.5
<0.3
TCRT1010
TCRT5000
>0.35
>3.5
<0.4
Transmissive Optical Sensors
with Aperture with Transistor Output
TCST1103 TCST2103 TCST1202 TCST2202 TCST1300 TCST2300
*)TCST2103 /TCST2202 /TCST2300
4(>2) 4(>2) 2(>1) 2(>1) 0.5(>0.25) 0.5(>0.25)
20(>10) 20(>10) 10(>5) 10(>5) 2.5(>1.25) 2.5(>1.25)
0.25 0.25
without Aperture with Transistor Output
TCST1000 0.5(>0.25) 2.5(>1.25)
TCST2000
0.5(>0.25)
2.5(>1.25)
Miniature Transmissive Optical Sensors with Transistor Output
TCST1230 TCST1030 TCST5123 1(>0.5) 2.5(>1.2) 5(>2.4) 5(>2.5) 25(>12) 25(>12)
Miniature Optical Encoder with Transistor Output (Dual Channel)
TCVT1300 0.6(>0.4) 2(>1.3)
TELEFUNKEN Semiconductors 06.96
Characteristics Package Type V(BR)CEO Resolution Aperture
Matched Pairs (Emitter Detector)
TCZT8012 2(>1) 10(>5) <0.4
TCZT8020
0.5(>0.25)
2.5(>1.25)
<0.4
0.025
Characteristics Package Type toff Resolution Aperture
Transmissive Optical Sensors with Schmitt Trigger Logic1)
TCSS1100 TCSS2100 0.03 0.03
Matched Pairs (Emitter Detector) with Schmitt Trigger Logic1)
TCZS8000 0.03
TCZS8100 Inverted, open collector output
0.03
4.5-16
Optical Sensors with Wires Connectors
Characteristics Package Type Resolution Aperture
Transmissive Optical Sensors with Schmitt Trigger Logic Output
TCYS5201 0.35
TCYS6201
0.35
TELEFUNKEN Semiconductors 06.96
Product Information Card
Optocouplers Isolators
Market Segment, Recommended TEMIC Devices Description On-off external control circuit, feedback circuit, overvoltage detection circuit. Main features: Insulation input-to-output small transformers replaced. features: Isolation test voltage (std 3.750 RMS) (ratio output current/ input current). Different models request different rank. Coupler with base connection very popular because prevents interferences. Most usable parts: CQY80N/ TCDT1100 CNY75/ TCDT1120 couplers also available version. stands extended creepage distance 0.4I lead lead. Isolation input circuit, isolation output circuit, signal serve motor control circuit. Isolation signal transfer system automatic door control, circuit lamp relay drive circuit. Motor driving power-supply circuit (primarysecondary circuit isolation), high-voltage control circuit static electric printer, printer driver circuit interface between input output circuit. Interface between input output circuit type selection circuit. Applications Power supply monitors, computers, copy machines, printers, faxmachines, VCR, medical equipment, washing machines etc.
Switchmode power supply CQY80N/ TCDT1101-03 CNY75A-C/ TCDT1121-23 CNY64 CNY65 larger creepage distances Control equipment please recommend: 4N35-4N37 Programmable controller, numerical control, tele-facsimile, automatic door control, others tele-facsmile equipment, printer Office automation equipment please recommend: CNY64, CNY65 Vending machine please recommend: 4N35-4N37 Household appliance please recommend: CNY64, CNY65 K3010P-K3023P Audio signal isolation, video signal interface, power-supply circuit, motor control circuit. Triac driver interface between input output Base amplification circuit inverter control over-current detection circuit. electrical sewing machine, microwave oven, warm heating equipment, conditioner Compact disc player Audio equipment switch-mode power supply Telecommunication please recommend: K3010P-K3023P, 4N35-4N37, 4N32 Power supply circuit (primary-secondary circuit isolation) Isolation signal transfer system, pulse-dial circuit, ring-detector circuit, loop monitor circuit Push-button telephone system TELEFUNKEN Semiconductors 06.96
Optocouplers Optical Sensors
audio please recommend: TCRT1000, 5000, TCST5123, 1030, 1230 TCVT1300 Detection rotation speed, position pick-up head, home position tape counter, tape-end detection VCR, VDP, player, tape deck Home electric please recommend: TCRT5000, TCST1103, TCST1300, single parts Automotive please recommend: optical pairs: TCZT8020, TCZT8012, TCZS8100, TCRT1000 Control measure please recommend: TCVT1300, TCRT1000 Office automation please recommend: TCST1030, 1230, TCST1300, TCRT1000 TCRT5000 Others TCST1103, TCRT5000, TCST1300 Scattering reflection light, detection washing water contaminiation, detection salt level, mechanical position detection, movement needle, cloth feeder Engine speed detection, point-position detection, steering angle detection, detection door lock Smoke detector. washing machines, dish-washer, health equipment, sewing machines Tachometer, speedometer, steering wheel, door Speed rotation, motor position, distance detection, mechanical position detection, object sensor Rotary encoder measuring, devices, robots, electricity meters Detection paper, paper position, home position, print timing, detection paper feeding, detection paper exhaustion index, write-protect detection, zero tracking detection, detection scan timing Detection coins, detection paper money, detection prints, detection weight, object sensor/ position, liquid-level detection Copier, printer, typewriter, facsimile, FDD, tape drives, handy, scanner Slot machine ticket/ vending machines, validator, film cutter, electronic scales, watertab, liquid, container TELEFUNKEN Semiconductors 06.96
Market Segment, Application
Description
Usability
Classification Chart Opto Isolators
General purpose
4N27/28 CTR>10% Standard Transistor output 4N25/26 CTR>20% 4N35-37 CTR>100% Base n.c. Transistor output High Darlington output American connection 4N32/33 CTR>500% TCDT1110 CTR>50%
4N-Series
CNY74-2 CTR>50-600% MCT6/62 CTR>100% K827P CTR>50-600% CNY74-4 CTR>50-600% K847P CTR>50-600% 2800 3550 3750 6000
Channels Transistor output Multichannel
American connection
Japanese connection American connection Channels Transistor output Japanese connection 1500
11941
TELEFUNKEN Semiconductors 06.96
Classification Chart Opto Isolators
VDE-tested devices e.g., switching power supply
CNY64/65/66 Thickness isolation for: 700; safety standard Transistor output CTR>50% CNY21N CTR>25% base n.c. TCDT110.(G) CTR>50% base n.c. TCDT1110(G) CTR>100% base n.c. Creepage distance Transistor output TCDT112.(G) CTR>63% 4N25(G)V CTR>20% 4N35(G)V CTR>100% CQY80N(G) CTR>50% CNY17(G) Thickness isolation 0.75mm for: 0805 0806 Triac driver CTR>40% CNY75(G) CTR>63% K3010P(G) VDRM=250V, 15mA K3020P(G) VDRM=500V, 30mA CNY65Exi Creepage distance PTB-tested device for: intrinsic safety CNY18 CTR>25% K120P Hermetically-sealed package JEDEC TO72 Different connections Transistor output CTR>25% 3C91C CTR>40% 3C92C CTR>40% 1000 6000 8000 10000 11000 15000 Thickness isolation 3.3mm Transistor output 63-125% CNY21Exi CTR>50%
11940
TELEFUNKEN Semiconductors 06.96
Conventions Used Presenting Technical Data Nomenclature Semiconductor Devices According Electron
type number semiconductor devices consists letters followed serial number
Material
Function
Serial number
first letter gives information about material used active part devices. GERMANIUM (Materials with band SILICON (Materials with band GALLIUM-ARSENIDE (Materials with band COMPOUND MATERIALS (For instance Cadmium-Sulphide)
PHOTO COUPLER DIODE: Radiation sensitive DIODE: Radiation generating THYRlSTOR: power TRANSISTOR: power, switching THYRISTOR: Power TRANSISTOR: Power, switching DIODE: Multiplier, e.g., varactor, step recovery DIODE: Rectifying, booster DIODE: Voltage reference voltage regulator, transient suppressor diode
second letter indicates circuit function: DIODE: Detection, switching, mixer DIODE: Variable capacitance TRANSISTOR: power, audio frequency TRANSISTOR: Power, audio frequency DIODE: Tunnel TRANSISTOR: power, high frequency DIODE: Oscillator, miscellaneous DIODE: Magnetic sensitive HALL EFFECT DEVICE: open magnetic circuit. TRANSISTOR: Power, high frequency HALL EFFECT DEVICE: closed magnetic circuit
serial number consists
Three figures, running from 999, devices
primarily intended consumer equipment.
letter etc.) figures running from
devices primarily intended professional equipment.
version letter used indicate deviation single characteristic, either electrically mechanically. letter never fixed meaning, only exception being letter which indicates reversed voltage, i.e., collector-to-case.
material mentioned examples
TELEFUNKEN Semiconductors 06.96
Type Designation Code Optocouplers
TEMIC TELEFUNKEN Semiconductors
Case varieties Metal Dual inline Casting products Metal parts mounted plastic case package
Number coupler systems system systems systems systems
Main type
Coupler
Output Darlington Split-Darlington High speed Linear Schmitt Trigger Transistor Triac
position connection please refer data sheet
Selection type
Type Designation Code Optical Sensors
TEMIC TELEFUNKEN Semiconductors
Package varieties without mounting flange with mounting flange with mounting flange emitter side with mounting flange detector side special package without flange special package with flange TO92 Mini single part special part
Main type
Appendix Unmounted
Function/ Case varieties reflective sensor Reflective sensor with wire terminals Reflective sensor Transmission sensor (polycarbonat) transmissive sensor channel transmissive sensor Transmission sensor with wire terminals Transmission sensor with connector Emitter detector matched pairs without package
Selection type
Coupler
Output Darlington Linear Schmitt Trigger Transistor
Aperture without 0.25
TELEFUNKEN Semiconductors 06.96
Symbols Terminology Alphabetically
Anode, anode terminal Radiant sensitive area That area which radiant-sensitive specified range Distance between emitter (source) detector Acceptable Quality Level, "Qualification Monitoring" Base, base terminal Capacitance Cathode, cathode terminal Collector, collector terminal Celsius Unit centigrade scale; also used (besides express temperature changes Symbols: T(°C) T(K)-273 CCEO Collector emitter capacitance Capacitance between collector emitter with open base Measurement made applying reverse voltage between collector emitter terminals. Junction capacitance Capacitance PN-junction diode decreases with increasing reverse voltage. Coupling capacitance Capacitance between emitter detector opto isolator Current Transfer Ratio Ratio between output input current Critical rate rise commutating voltage IFT) Highest value "rate rise commutating voltage". will switch-on device again until after voltage decreased zero trigger current switched zero IFT). Emitter, emitter terminal Frequency Unit: (Hertz) Cut-off frequency frequency which modules small signal current transfer ratio decreased lowest frequency value. Gain bandwidth product Gain bandwidth product defined product times frequency measurement, when diode biased maximum obtainable gain. current gain Base current Collector current Collector base current ICEO Collector dark current, with open base radiant sensitive devices with open base without illumination/radiation Repetitive peak collector current Cross talk current reflex-coupled isolators, collector emitter cut-off current with emitter activated, without reflecting medium IDRM Repetitive peak off-state current maximum leakage current that occur under conditions VDRM Forward current continuous current flowing through diode direction lower resistance IFAV Average (mean) forward current TELEFUNKEN Semiconductors 06.96
Dv/Dt
Distance Critical rate rise off-state voltage Highest value "rate rise off-state voltage" which will cause switching from off-state on-state.
Dv/Dt
Peak forward current IFSM Surge forward current Threshold forward current minimum current required switch from offstate on-state minimum current required maintain thyristor on-state output current High level output current Reverse current, leakage current Current which flows when reverse bias applied semiconductor junction Reverse dark current Reverse dark current which flows through photoelectric device without radiation/ illumination ISrel Relative supply current On-state current permissible output current under stated conditions Kelvin unit absolute temperature (also called Kelvin temperature); also used temperature changes (formerly Ptot Total power dissipation Power dissipation, general Input/ output isolation resistor Load resistance RthJA Thermal resistance, junction ambient RthJC Thermal resistance, junction case Displacement Period (duration)
Temperature -273.16°C Unit: (Kelvin), (Celsius) Time Tamb Ambient temperature self-heating significant: Temperature surrounding below device, under conditions thermal equilibrium. self-heating insignificant: temperature immediate surroundings device Tamb Ambient temperature range absolute maximum rating: maximum permissible ambient temperature range. Tcase Case temperature temperature measured specified point case semiconductor device Unless otherwise stated, this temperature given temperature mounting base devices with metal Delay time Fall time, figure Junction temperature spatial mean value temperature which junction acquired during operation. case phototransistors, mainly temperature collector junction because inherent temperature maximum. Temperature coefficient ratio relative change electrical quantity change temperature which causes under otherwise constant operating conditions. toff Turn-off time, figure Turn-on time, figure Pulse duration, figure Rise time, figure Storage time
TELEFUNKEN Semiconductors 06.96
Soldering temperature Maximum allowable temperature soldering with specified distance from case duration (see table Tstg Storage temperature range temperature range which device stored transported without applied voltage VBEO Base-emitter voltage, open collector V(BR) Breakdown voltage Reverse voltage which small increase voltage results sharp rise reverse current given technical data sheets specified current. V(BR)CEO Collector emitter breakdown voltage, open base V(BR)EBO Emitter base breakdown voltage, open collector V(BR)ECO Emitter collector breakdown voltage, open base VCBO Collector-base voltage, open emitter Generally, reverse biasing voltage applied anyone terminals transistor such that junction operates reverse direction, whereas third terminal (second junction) specified separately. Collector-emitter voltage VCEO Collector-emitter voltage, open base VCEsat Collector emitter saturation voltage Saturation voltage voltage between collector emitter specified (saturation) conditions i.e., whereas operating point within saturation region.
Saturation region
VDRM Repetitive peak off-state voltage maximum allowable instantaneous value repetitive off-state voltage that applied across triac output VEBO Emitter base voltage, open collector VECO Emitter collector voltage, open base voltage across diode terminals which results from flow current forward direction voltage between input terminals output terminals VIORM maximum recurring peak (repetitive) voltage value optocoupler, characterizing long-term withstand capability against transient overvoltages VIOThe impulse voltage value optocoupler, characterizing long-term withstand capability against transient overvoltage VIOWM maximum rms. voltage value optocoupler, characterizing long-term withstand capability insulation Reverse voltage Voltage drop which results from flow reverse current Supply voltage VOn-state voltage maximum voltage when thyristor on-state VTMrel Relative on-state voltage Angle half sensitivity plane angles through which detector, illuminated point source, rotated both directions away from optical axis, before electrical output device falls half maximum value Angle half sensitivity plane angles through which emitter rotated both directions away from optical axis, before electrical output linear detector facing emitter falls half maximum value
given given
11694
VCESat
Figure
TELEFUNKEN Semiconductors 06.96
Example Using Symbols According
Transistor
value Icav ICAV
ICAV ICM;IC ICM;IC
Collector current
value, signal Average total value Maximum total value varying component Maximum varying component value Instantaneous total value Instantaneous varying component value
following relationships valid: ICAV ICAV
7795
without signal
with signal
Figure
VFSM VFRM VFWM
Diode
VFSM VRSM VFRM
VRWM VRRM VRSM
7796
VRRM VFWM VRWM
Forward voltage Reverse voltage Surge forward voltage (non-repetitive) Surge reverse voltage (non-repetitive) Repetitive peak forward voltage Repetitive peak reverse voltage Crest working forward voltage Crest working reverse voltage
Figure
TELEFUNKEN Semiconductors 06.96
Triac
Quadrant Forward Breakover Voltage Current +IDRM -VDRM +VDRM -IDRM Reverse Breakover Voltage Current Quadrant
11881
Repetitive peak off-state current Threshold forward current Holding current On-state current VDRM Repetitive peak off-state voltage VOn-state voltage
IDRM
Figure
Designation symbols optoelectronic devices given possible according 44020 sheet publication (45).
TELEFUNKEN Semiconductors 06.96
Data Sheet Structure
Data sheet information generally presented following sequence:
Thermal Data Thermal Resistances
Some thermal data (e.g., junction temperature, storage temperature range, total power dissipation) given under heading "Absolute maximum ratings"; (This because they impose limit application range device). thermal resistance junction ambient (RthJA) quoted that which would measured without artificial cooling, i.e., under worst case conditions. Temperature coefficients, other hand, listed together with associated parameters under "Optical electrical characteristics".
Description Absolute maximum ratings Thermal data thermal resistances Optical electrical characteristics Diagrams Dimensions (mechanical data)
Optical Electrical Characteristics
Here, most important operational, optical electrical characteristics (minimum, typical maximum values) listed. associated test conditions, supplemented with curves AQL-value quoted particularly important parameters (see "Qualification Monitoring") also given.
Description
following information provided: Type number, semiconductor materials used, sequence zones, technology used, device type and, necessary, construction. Also, short-form information special features typical applications given.
Diagrams
Besides static (dc) dynamic (ac) characteristics, family curves given specified operating conditions. These curves show typical interpendence individual characteristics.
Absolute Maximum Ratings
These define maximum permissible operational environmental conditions. these conditions exceeded, could result destruction device. Unless otherwise specified, ambient temperature assumed absolute maximum ratings. Most absolute ratings static characteristics; measured pulse method, associated measurement conditions stated. Maximum ratings absolute (i.e., interdependent). equipment incorporating semiconductor devices must designed that even under most unfavorable operating conditions specified maximum ratings devices used never exceeded. These ratings could exceeded because changes
Dimensions (Mechanical Data)
This list contains important dimensions sequence connection, supplemented circuit diagram. Case outline drawings carry DIN-, JEDEC commercial designations. Information angle sensitivity intensity weight completes list mechanical data. Please Note: dimensional information does include tolerances, following applies: Lead length mounting hole dimensions minimum values. Radiant sensitive emitting area respectively) typical values, other dimensions maximum. device accessories must ordered separately, quoting order number.
Supply voltage, properties other components
used equipment
Additional Information
Preliminary specifications This heading indicates that some information preleminary specifications subject slight changes. developments This heading indicates that device concerned should used equipment under development. however, available present production.
Control settings Load conditions Drive level Environmental conditions properties
devices themselves (i.e., ageing). TELEFUNKEN Semiconductors 06.96
Galvanical separation
Figure Basic application optocoupler
11706
General Description
Basic Function
electrical circuit, optocoupler ensures total electric isolation, including potential isolation, case transformer, instance. practice, this means that control circuit located side optocoupler, i.e., emitter side, while load circuit located other side, i.e., receiver side. Both circuits electrically isolated optocoupler (figure Signals from control circuit transmitted optically load circuit, therefore free retroactive effects. most cases, this optical transmission realized with light beams whose wavelengths span infrared range, depending requirements applicable optocoupler. bandwidth signal transmitted ranges from voltage signal frequencies band. optocoupler comparable transformer relay. Besides having smaller dimensions most cases, advantages optocouplers compared relays following: ensures considerably shorter switching times, contact bounce, interference caused arcs, mechanical wear possibility adapting signal, already coupler, following stage circuitry. Thanks these advantages, optocouplers outstandingly suitable circuits used microelectronics also data processing telecommunication systems. Optocouplers used increasing extent safety tested components, switchmode power supplies.
coupling capacitance uncontrolled function field strength influences
These factors essentially dependent design, materials used corresponding chips used emitter/receiver. TEMIC succeeded achieving design with optimized insulation behavior good transfer characteristics. TEMIC offers various mechanical designs. 6-lead package optocoupler used most widely throughout world. Since this design deviates fundamentally from manufacturers' designs, necessary explain characteristics. TEMIC's 6-lead couplers, emitter receiver chips placed side side. semi-ellipsoid with best reflection capabilities fitted over both chips. entire system then cast plastic material impermeable infrared range high dielectric strength. whole system enveloped light-proof plastic compound ensure that external influences such light dust, etc. will disturb coupler, figure design offers several advantages comparison conventional coupler designs. mechanical clearance between emitter receiver 0.75 thus mechanically stable even under thermal overloads, i.e., possibility short circuit caused material deformation excluded. This important optocouplers which have fulfill strict safety requirements (VDE/UL specifications), VDE0884 Facts Information. TELEFUNKEN Semiconductors 06.96
Design
optocoupler fulfill essential requirements:
Good insulation behavior High current transfer ratio (CTR) degradation
Thanks their large clearance these couplers have very coupling capacity Couplers with conventional designs, i.e., where emitter receiver fitted "face-to-face" (figure have higher coupling capacitance values factor Attention must paid coupling capacitance digital circuits which steep pulse edges produced which superimpose themselves control signal. With coupling capacitance, transmission capabilities these interference spikes effectively suppressed between input output because coupler should only transmit effective signal. This capability suppressing dynamic interferences commonly known "common-mode rejection".
inversions occur surface, phototransistor becomes forward-biased, causing inadmissible residual collector-emitter current. result, controlled functioning coupler longer guaranteed (figure This effect occurs mainly whenever receiver within field strength potential. manufacturer should create suitable protective measures this case. Using TEMIC's optocouplers, such protective measures necessary thanks their perfect design. degradation optocoupler, i.e., impairment over finite period, depends factors. hand, depends emitter element decreasing radiation power while, other hand, depends ageing opaqueness synthetic resin which must transmit radiation from emitter receiver. decrease radiation power primarily ascribed thermal stress caused external, high ambient temperature and/or high forward current. practice, optocouplers operated with forward current through emitting diode. this range, degradation average temperature 40°C less than after 1000 compare this value with service life requirements applicable transistors high grade systems (such those used telecommunication system standards), optocoupler takes good position with such degradation values. Deutsche Bundespost, example, permits B-drift more than transistors with maximum testing time 2000 general, optocoupler's life time period 150.000 i.e, should have dropped below value hours during this time (see figure
Figure Inline emitter transmitter chip design (e.g., CQY80N)
Figure Face-to-face design
special design these couplers, receiver surface outside area direct field strength. Field strength produced when there voltage potential between coupler's input output. causes migration positive ions transistor's surface. Positive ions perform base same gate voltage applied n-channel transistor (see figure
Figure Functions parasitic field effect transistor result failure (latch-up) phototransistor couplers
TELEFUNKEN Semiconductors 06.96
Technical Description Assembly
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 0.55
12107
Emitter Emitters manufactured using most modern Liquid Phase Epitaxy (LPE) process. using this technology, number undesirable flaws crystal reduced. This results higher quantum efficiency thus higher radiation power. Distortions crystal prevented using mesa technology which leads lower degradation. further advantage mesa technology that each individual chip tested optically electrically even wafer. Detector
1500 3000 4500 6000 7500 9000
Rel. Collector Current
Operating conditions: VCE=5V IF=30mA Tamb=25°C
Test conditions: VCE=5V IF=10mA
Time
Figure Degradation under typical operating conditions with reference CQY80N
TEMIC detectors have been developed that they match perfectly emitter. They have capacitance values, high photosensitivity designed extremely saturation voltage. Silicon nitride passivation protects surface against possible impurities. Assembly components fitted onto lead frames fully automatic equipment using conductive epoxy adhesive. Contacts established automatically with digital pattern recognition using well-proven thermosonic technique. addition optical mechanical checks, couplers measured temperature 100°C.
Conversion Tables Optoelectronic General
Table Corresponding radiometric photometric definitions, symbols units (DIN 5031, Part
Radiometric Units Unit Symbol Radiant flux, Radiant power Radiant exitance, Exitance (Radiant) intensity Radiant sterance, Radiance Radiant incidance, Irradiance Radiant energy Irradiation
Unit Watt, W/m2 W/sr W/m2 Ws/m2
Photometric Units Unit Symbol Luminous flux Luminous emittance (Luminous) intensity Luminance (Brightness sterance) Illuminance Luminous energy Illumination
Unit lumen, lm/m2 Candela, lm/sr cd/m2
Note Power Output power unit area Output power unit solid angle Output power unit solid angle emitting areas Input power unit area Power time Radiant energy luminous energy unit area
lm/m2 Lux, s/m2
TELEFUNKEN Semiconductors 06.96
Measurement Techniques
Introduction
characteristics given optocoupler`s data sheets verified either 100% production tests followed statistic evaluation sample tests typical specimens. Possible tests following:
constant
Measurements emitter chip Measurements detector chip Static measurements optocoupler Measurement switching characteristics, cut-off
frequency capacitance
8205
Figure
constant
Thermal measurements
basic circuits used most important measurements shown following sections, although these circuits modified slightly cater special measurement requirements.
Measurements Emitter Chip
Forward- Reverse Voltage Measurements
forward voltage, measured either curve tracer statically using circuit shown figure specified forward current (from constant current source) passed through device voltage developed across measured. measure reverse voltage, reverse current from constant current source applied diode (figure voltage developed across measured voltmeter extremely high input impedance MW).
8206
Figure
VCEO constant
Measurements Detector Chip
VCEO ICEO Measurements
collector-emitter voltage, VCEO, measured either transistor curve tracer statically using circuit shown figure collector dark current, ICEO, must measured complete darkness (figure 13). Even ordinary daylight illumination might cause wrong measurement results.
VCEO
12367
Figure
TELEFUNKEN Semiconductors 06.96
ICEO
constant
11696
11695
Figure Figure
Static Measurements
measure collector current, (figure 14), specified forward current, applied diode. Voltage drop then measured across low-emitter resistance. case collector-emitter saturation voltage, VCEsat (figure 15), forward current, applied diode collector current, phototransistor. VCEsat then measured across collector emitter terminals shown figure
constant
constant
VCEsat
8218
Figure
Switching Characteristics
Definition
Each electronic device generates certain delay between input output signals well certain amount amplitude distortion. simplified circuit (figure shows input output signals optocouplers displayed dual-trace oscilloscope. following switching characteristics determined comparing timing output current waveform that input current waveform (figure 17).
GaAs-Diode
Channel
Channel
11697
Figure
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11698
100%
toff
pulse duration delay time rise time turn-on time storage time fall time turn-off time
toff
Figure
Improvements Switching Characteristics Phototransistors Darlington Phototransistors
With normal transistors, switching tunes reduced drive signal level hence collector current
increased. Another time reduction (especially fall time achieved using suitable base resistor. However, this only done expense decreasing CTR.
TELEFUNKEN Semiconductors 06.96
Taping Couplers
TEMIC couplers packages available antistatic blister tape accordance with 286-3) automatic component insertion. blister tape plastic strip with impressed component cavities, covered tape. orders "GS12" part number, e.g., TCMT1020GS12.
12363
Figure Blister tape
technical drawings according specifications
1.85 1.65
max.
5.55 5.45 12.3 11.7
11942
Figure Tape dimensions Number Components Quantity reel: 2000 (minimum quantities order)
TELEFUNKEN Semiconductors 06.96
Technical Information
Peel test requirement: Temperature/ Pressure settings: Wheel pressure Production quantity: Trailer min.
Seal pressure front/ rear Real temperature front/ rear 150°C
Production units 2000
Leader min.
8158
De-reeling direction
Tape leader
empty compartments Carrier leader
min. empty compartments Carrier trailer
Figure Beginning reel
34.0 32.0
21.5 20.5
10518
12.90 12.75
Figure Reel dimensions
TELEFUNKEN Semiconductors 06.96
Missing Devices
maximum 0.5% total number components reel missing, exclusively missing components beginning reel. Maximum three consecutive components missing, provided this followed consecutive compartments. tape leader least followed carrier leader with least more than empty compartments. tape leader include carrier trailer, providing connected together. last component followed carrier tape trailer with least empty compartments sealed with cover tape.
Assembly Instructions
General
Optoelectronic semiconductor devices mounted position. Connecting wires less than diameter bent, provided bend less than from bottom case mechanical stress affect Connection wires larger diameters, should bent. device mounted near heat-generating components, consideration must given resultant increase ambient temperature.
Soldering Instructions
Protection against overheating essential when device being soldered. Therefore, connection wires should left long possible. time during which specified maximum permissible device junction temperature exceeded soldering process should short possible (one minute maximum). case plastic encapsulated devices, maximum permissible soldering temperature governed maximum permissible heat that applied encapsulant rather than maximum permissible junction temperature. maximum soldering iron solder bath) temperatures given table During soldering, forces must transmitted from pins case (e.g., spreading pins).
Tape Removal Force
removal force lies between removal speed mm/s. order prevent components from popping blisters, tape must pulled angle 180°C with respect feed direction.
Ordering Designation
type designation device package given appendix number: GS12. Example: TCMT1020-GS12
Table Maximum soldering temperatures
Devices metal case Devices plastic case Devices plastic case
Iron Soldering Iron Distance Temperature Soldering Position from Lower Edge Case 245_C 245_C 350_C 260_C 300_C
Maximum Allowable Soldering Time
Wave Reflow Soldering Soldering Tem- Distance Maximum perature Soldering PosiAllowable tion from Soldering temperature/time Lower Edge Time profiles Case 245_C 300_C 235_C 260_C 260_C
y5.0 y2.0 y2.0 y2.0
x300_C
y5.0
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Soldering Methods
There several methods soldering devices onto substrate. following list complete. Soldering vapor phase
Size printed circuit board Absorption coefficient surfaces Packing density Wavelength spectrum radiation source Ratio radiated convected energy
Temperature/time profiles entire process influencing parameters given figure Wave soldering
Soldering saturated vapor also known condensation soldering. This soldering process used batch system (dual vapor system) continuous single vapor system. Both systems also include pre-heating assemblies prevent high temperature shock other undesired effects. Infrared soldering
using infrared (IR) reflow soldering, heating contact-free energy heating assembly derived from direct infrared radiation from convection. heating rate furnace depends absorption coefficients material surfaces ratio component's mass As-irradiated surface. temperature parts furnace, with mixture radiation convection, cannot determined advance. Temperature measurement performed measuring temperature certain component while being transported through furnace. temperatures small components, soldered together with larger ones, rise 280_C. Influencing parameters internal temperature component follows:
wave soldering more continuously replenished waves molten solder generated, while substrates soldered moved direction across crest wave. Temperature/time profiles entire process given figure Iron soldering
This process cannot carried controlled situation. should therefore used applications where reliability important. There classification this process. Laser soldering
This excess heating soldering method. energy absorbed heat device much higher temperature than desired. There classification this process moment. Resistance soldering
Time power Mass component Size component
This soldering method which uses temperature-controlled tools (thermodes) making solder joints. There classification this process moment.
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Temperature-Time Profiles
max. Temperature
8625
max. max. full line typical dotted line process limits
Lead Temperature
Time
Figure Infrared reflow soldering optodevices (SMD package)
8626
Lead Temperature
second wave full line typical dotted line process limits
°.260
first wave Temperature
forced cooling
°.130
Time
Figure Wave soldering double wave optodevices
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Heat Removal
heat generated semiconductor junction(s) must moved ambient. case low-power devices, natural heat conductive path between case surrounding usually adequate this purpose. case medium-power devices, however, heat conduction have improved staror flag-shaped heat dissipators which increase heat radiating surface. heat generated junction conveyed case header conduction rather than convection; measure effectiveness heat conduction inner thermal resistance thermal resistance junction case, RthJC, whose value given construction device. heat transfer from case surrounding involves radiation convection conduction, effectiveness transfer being expressed terms RthCA value, i.e., case ambient thermal resistance. total thermal resistance, junction ambient therefore: RthJA RthJC RthCA total maximum power dissipation, Ptotmax, semiconductor device expressed follows: totmax
case device should mounted directly onto cooling plate. edge length, derived from figures order obtain given RthCA value, must multiplied with
where
1.00 vertical arrangement 1.15 horizontal arrangement 1.00 bright surface 0.85 dull black surface
Example emitter with Tjmax 100°C RthJC K/W, calculate edge length thick aluminium square sheet having dull black surface 0.85) vertical arrangement Tamb 70°C Ptot thCA thCA
thCA
jmax thJA
jmax thJC thCA
jmax thJC jmax
thCA
thJC
where: Tjmax maximum allowable junction temperature Tamb highest ambient temperature likely reached under most unfavourable conditions RthJC thermal resistance, junction case RthJA thermal resistance, junction ambient RthCA thermal resistance, case ambient, depends cooling conditions. heat dissipator sink used, then RthCA depends thermal contact between case heat sink, heat propagation conditions sink rate which heat transferred surrounding air. Therefore, maximum allowable total power dissipation given semiconductor device influenced only changing Tamb RthCA. value RthCA could obtained either from data heat sink suppliers through direct measurements. case cooling plates heat sinks, approach outlines figures used guidelines. curves shown both figures give thermal resistance RthCA square plates aluminium with edge length, with different thicknesses.
100°C -W70°C
thCA
case
calculated from relationship
jmax thJC thCA case case
thCA
thCA
jmax amb) thJC thCA
70°C) 100WK W(100°C
W30°C 10°C
TELEFUNKEN Semiconductors 06.96
60°C 120°C 30°C
thCA
thCA
10°C
60°C 120°C
10°C 30°C
Plate thickness
7834
Plate thickness 1000
7835
1000
Figure Figure
With RthCA 10°C, plate thickness edge length
However, equipment life reliability have taken into consideration therefore larger sink would normally used avoid operating devices continuously their maximum permissible junction temperature.
TELEFUNKEN Semiconductors 06.96
Handling Instructions
Protection against Electrostatic Damage
Although electrostatic breakdown most often associated with semiconductor devices, optoelectronic devices also prone such breakdown. Miniaturized highly integrated components particularly sensitive. electrostatically safe equipment machinery. Removal Electrostatic Charges Connect conductors (metals, etc.) ground, using dedicated grounding lines. prevent dangerous shocks damaging discharge surges, insert resistance between conductor grounding line. Connect conveyors, solder baths, measuring machines, other equipment ground, using dedicated, grounding lines. ionic blowers neutralize electrostatic charges insulators. Blowers pass charged over targeted object, neutralizing existing charge. They useful discharging insulators other objects that cannot effectively grounded. Human Electrostatic human body readily picks electrostatic charges, there always some risk that human operators cause electrostatic damages semiconductor devices they handle. following counter measures essential. Anti-Static Wrist Straps people come into direct contact with semiconductors should wear anti-static wrist straps, i.e., those charges parts supply people involved mounting, board assembly repair. sure insert resistance into straps. resistance protects against electrical shocks prevents instantaneous potentially damaging discharges from charged semiconductor devices.
Sensitivity
Breakdown Voltages Typical electrostatic voltages working environment easily reach several thousand volts, well above level required cause breakdown. market requirements moving towards greater miniaturization, lower power consumption, higher speeds, optoelectronic devices becoming more integrated delicate. This means that they becoming increasingly sensitive electrostatic effects. Device Breakdown Electrostatic discharge events often imperceptible. This might cause following problems. Delay Failure Electrostatic discharge damage device change characteristics without causing immediate failure. device pass inspection, move into market, then fail during initial period use. Difficulty Identifying Discharge Site Human beings generally cannot perceive electrostatic discharges less than 3000 while semiconductor devices sustain damage from electrostatic voltages often very difficult locate process which electrostatic problems occur. Basic Countermeasures Optoelectronic devices must protected from static electricity stages processing. Each device must protected from time received until time been incorporated into finished assembly. Each processing stage should incorporate following measures. Suppression Electrostatic Generation Keep relative humidity humidity above 70%, morning cause condensation). Remove materials which might cause electrostatic generation (such synthetic resins) from your workplace. Check appropriateness floor mats, clothing (uniforms, sweaters, shoes), parts trays, etc.
sure that straps placed directly next skin, placing them over gloves, uniforms other clothing reduces their effectiveness. Antistatic Mats, Uniforms Shoes anti-static mats shoes effective places where wrist strap inconvenient (for example, when placing boards into returnable boxes). prevent static caused friction with clothing, personnel should wear anti-static uniforms, gloves, sleeves aprons, finger covers, cotton apparel. Protection during Inspection, Mounting Assembly personnel ensure that hands come into direct contact with leads. Avoid non-conductive finger covers. Cover work desk with grounded anti-static mats. Storage Transport Always conductive foams, tubes, bags, reels trays when storing transporting semiconductor devices.
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Mounting Precautions
Installation
Installation When mounting device whose pin-hole pitch does match lead pitch device, reform device pins appropriately that internal chip subjected physical stress. Installation Using Device Holder Emitters detectors often mounted using holder. When using this method, make sure that there between holder device. Installation Using Screws When lead soldering adequate securely retain photointerrupter, retained with screws. tightening torque should exceed kg/cm3. excessive tightening torque deform holder, which results poor alignment optical axes degrades performance. Lead Forming Lead pins should formed before soldering. apply forming stress lead pins during after soldering. light emitters detectors with lead frames, lead pins should formed just beneath stand-off section. optocouplers optosensors using dual-in-line packages, lead pins should formed below bent section that forming stress does affect inside device. Stress resin result disconnection. When forming lead pins, bend same portion repeatedly, otherwise pins break.
Cleaning
General Optoelectronic devices particularly sensitive with regard cleaning solvents. Montreal Protocol environmental protection calls complete chlorofluorocarbons. Therefore, most harmless chemicals optoelectronic devices should used environmental reasons. best solution modem reflow paste solder composition which does require cleaning procedure. cleaning required when fluxes guaranteed non-corrosive high, stable resistivity. Cleaning Procedures Certain kinds cleaning solvents dissolve penetrate transparent resins which used some types sensors. Even black molding components used standard isolators frequently penetrated between mold compound lead frame. Inappropriate solvents also remove marking printed device. therefore essential take care when choosing solvents remove flux. Cleaning required flux solder material non-aggressive residues guaranteed corrosive longterm stable high resistivity. cleaning procedures using solvents only high purity Ethyl Isopropyl alcohol recommended. S-series isolators also suited cleaning high purity water. each case, devices immersed liquid typically min. afterwards immediately dried least minutes 50°C air. table appropriate cleaning procedures various product lines summarized.
TELEFUNKEN Semiconductors 06.96
Table Appropriate cleaning procedures several product lines
Cleaning Procedure Solvent Procedure Ethylalcohol Isopropylalcohol Water cleaning solder materials Immersion drying Immersion drying Immersion drying
Product Lines DIL-Coupler Sensors System System
High Voltage Couplers
acceptable acceptable acceptable only transistor base connected outside Precautions Promote breakage band wires Intensified cleaning methods such ultrasonic cleaning, steam cleaning, brushing cause damage optoelectronic devices. They generally recommended. Ultrasonic cleaning (unless well controlled) damage devices mechanical vibrations. Using high-intensity ultrasonic cleaning, process might: Promote dissolution crack package surface thus affect performance e.g., sensors Promote separation lead frame resin thus reduce humidity resistance. This method should only used after extensive trials have been ensure that problems occur. Brushing scratch package surfaces. Moreover, remove printed markings. Special care should taken only high purity chemically well-controlled solvents. Especially chloride ions from flux solvents that remain package high risk long-time stability electronic device. These well other promote corrosion chip which interrupt bond connections outside leads.
TELEFUNKEN Semiconductors 06.96
Quality Information
TEMIC's Continuous Improvement Activities TEMIC Tools Continuous Improvement
Quality training personnel including
production, development, departments marketing sales
TEMIC qualifies materials, processes process
changes.
TEMIC uses Process FMEA (Failure Mode
Effects Analysis) processes. Process machine capability well Gage (Repeatability Reproducibility) proven.
Zero defect mindset Permanent quality improvement process Total Quality Management (TQM) TEMIC's Quality Policy established
Management Board
TEMIC's internal qualifications correspond
68-2 883.
TEMIC periodically requalifies device types (Short
Term Monitoring, Long Term Monitoring).
TEMIC uses significant production parameters. performed trained operators.
Quality system certified 9001 July
1993 (Commercial Quality System)
Quality system formerly approved AQAP-1
(Military Quality System)
TEMIC's Burn-In selected device types. TEMIC's 100% testing final products. TEMIC's release carried sampling. Sampling acceptance criterion always
TEMIC's Quality Policy
goal achieve total customer satisfaction through everything Therefore, quality products services number priority. Quality comes first! TEMIC part process continuous improvement.
TELEFUNKEN Semiconductors 06.96
General Quality Flow Chart Diagram
11464
Development
Material
Qualification
Incoming inspection
Production
Wafer processing
Quality control
Assembly
Quality control
100% Final test
release sampling Acceptance criterion
Quality control
Monitoring
Statistical Process Control Average Outgoing Quality
Stock/ customer
TELEFUNKEN Semiconductors 06.96
Process Flow Charts
Quality Assurance Production Materials Incoming Inspection Gate Frame coding Lead frame
Monitor
1.Chip Aatach curing
Emitter Silver epoxy glue
Gate Gate Gate Gate
Monitor
2.Chip attach curing Wire bonding 100% visual control
Detector Bond wire
Gate Monitor Reflector attach curing Frame sorting Gate Molding Monitor Deflashing Post curing Gate Molding compound Gate Reflector Epoxy Gate Gate
plating Gate
Gate
Frame sorting Backside coding Gate
Rejects
Monitor
Cutting Bending Load into tubes 100% Test tubes Tubes Gate
Gate 100% Function test Tamb=100°C 100% Isolation voltage test Final test Monitor Output test Packing
11937
Rejects Total rejects
Marking
Color
Gate
Packing
Gate
Stock
TELEFUNKEN Semiconductors 06.96
Assembly Flow Chart Standard Opto-Coupler
Frame Diced Wafer
Frame Preparation
Optical Attach Visual
Pull Test Shear Test Peel Test
Wire Bond
Optical Reflector Load Heatstake /Casting
Visual Molding Plating Visual Cutting Marking Optical Burn-In Electrical Test 100% Prepacking (Box) Visual Final Packing Barcoding
Monitor Monitor
Sample Test 0.065
11938
TELEFUNKEN Semiconductors 06.96
Qualification Release
wafer processes, packages device types qualified according internal TEMIC Semiconductors specification 3000. 3000 consists five parts (see figure 27). Wafer process release: wafer process release fundamental release/qualification various technologies used TEMIC Semiconductors. Leading device types defined various technologies. Three wafer lots these types subjected extensive qualification procedure used represent this technology. positive result will release technology. Package release: package release fundamental release/ qualification different packages used. Package groups defined (see figure 27). Critical packages selected: assembly lots subjected qualification procedure representing that package group. positive result will release similar packages. Device type release: device type released release individual designs. Monitoring: Monitoring serves both continuous monitoring production source data calculation early failures (early failure rate: EFR). Product process changes released (Engineering Change Note). This includes proving process capability meeting quality requirements. Test procedures utilized 68-2-. MIL- STD-883 respectively.
3000
Wafer process qualification
Package qualification
Device type qualification Figure Structure 3000
Monitoring
Qualification process changes
TELEFUNKEN Semiconductors 06.96
Statistical Methods Prevention
manufacture high-quality products, sufficient controlling product production process. Quality `designed-in' during process- product development. addition that, `designing-in' must also ensured during production flow. Both will achieved means appropriate measurements tools. part continuous improvement process, TEMIC Semiconductors' employees trained using statistical methods procedures.
Reliability
requirements concerning quality reliability products always increasing. sufficient only deliver fault-free parts. addition, must ensured that delivered goods serve their purpose safely failure free, i.e., reliably. From delivery device final product, there some occasions where device final product fail despite testing outgoing inspection. principle, this sequence valid components product. these reasons, negative consequences failure, which become more serious expensive later they occur, obvious. manufacturer therefore interested supplying products with lowest possible
Statistical Process Control (SPC) R&R- (Repeatability Reproducibility) tests Time Control (UTC) Failure Mode Effect Analysis (FMEA) Design Experiments (DOE) Quality Function Deployment (QFD)
TEMIC Semiconductors been using tool production since 1990/91. using SPC, deviations from process control goals quickly established. This allows control processes before process parameters specified limits. assure control processes, each process step observed supervised trained personnel. Results documented. Process capabilities measured expressed process capability index (Cpk). Validation process capability required processes before they released production. Before using equipment gauges production, machine capability (Cmk machine capability index) (Repeatability Reproducibility) used validate equipment's fitness use. Up-Time recorded Up-Time Control (UTC) system. This data determines intervals preventive maintenance, which basis maintenance plan. process-FMEA performed processes (FMEA Failure Mode Effect Analysis). addition, design- product- FMEA used critical products meet agreed customer requirements. Design Experiments (DOE) tool statistical design experiments used optimization processes. Systems (processes, products procedures) analyzed optimized using designed experiments. significant advantage compared conventional methods efficient perfomance experiments with minimum effort determining most important inputs optimizing system.
(Average Outgoing Quality) value (Early Failure Rate) value (Long-term Failure Rate) value
Average Outgoing Quality (AOQ)
outgoing products sampled after 100% testing. This known "Average Outgoing Quality" (AOQ). results this inspection recorded (parts million) using method defined JEDEC
Early Failure Rate (EFR)
estimate ppm) number early failures related number devices used. Early failures normally those which occur within first 1000 hours. Essentially, this period time covers guarantee period finished unit. values therefore very important device user. early life failure rate heavily influenced complexity. Consequently, `designing-in' better quality during development design phase, well optimized process control during manufacturing, significantly reduces value. Normally, early failure rate should significantly higher than random failure rate. given (parts million).
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Long-Term Failure Rate (LFR)
shows failure rate during operational period devices. This period particular interest manufacturer final product. Based value, estimations concerning long-term failure rate, reliability device's module's usage life derived. usage life time normally period constant failure rate. failures occuring during this period random. Within this period failure rate
larger sample size, narrower confidence interval.
lower confidence level statement,
narrower confidence interval. confidence level applicable failure rate whole when using estimated value derived from k2-distribution. practice, only upper limit confidence interval (the maximum average failure rate) used. Therefore:
(Quantity
failures Time failure)
hours
measure (Failures Time number failures device hours). Example sample semiconductor devices tested operating life test (dynamic electric operation). devices operate period 10,000 hours. Failures: failure after 1000 failure after 2000
Confidence level Sample size Time hours
[FIT]
Number failures
failure rate calculated from this sample
4983000 4.01
1000 2000
10000
Device hours k2/2 taken from table above example from table k2/2 (r=2; PA=60%) 3.08 4983000 3.08 4983000
This l-value FIT, this sample failure rate 0.04% 1000 average.
Early Failures Operating Period Wear Failures
6.18
This means that failure rate does exceed 0.0618% 1000 (618 FIT) with probability 60%. confidence level chosen from table k2/2 (r=2; PA=90%)
11401
4983000
1.06
Figure Bath curve
Confidence Level
failure rate calculated from sample estimate unknown failure rate lot. interval failure rate (confidence interval) calculated, depending confidence level sample size. following valid:
This means that failure rate does exceed 0.106% 1000 (1060 FIT) with probability 90%.
Operating Life Tests
Number devices tested: Number failures (positive qualification): Test time: Confidence level: 2000 hours TELEFUNKEN Semiconductors 06.96
k2/2 60%) 0.93
0.93 2000
expectations concerning quality reliability products have become higher. Manufacturers semiconductors must therefore assure long operating periods with high reliability short time. Sample stress testing most commonly used assuring this. rule Arrhenius describes this temperature-dependent change failure rate.
This means, that failure rate does exceed 0.93% 1000 (9300 FIT) with probability 60%. This example demonstrates that only possible verify values 9300 with confidence level normal qualification tests devices, 2000 obtain values which meet today's requirements FIT), following conditions have fulfilled:
Very long test periods Large quantities devices Accelerated testing (e.g., higher temperature)
Table
Boltzmann's constant 8.63 10-5 eV/K Activation energy Junction temperature real operation Kelvin Junction temperature stress test Kelvin
Number Failures 0.60 1.68 2.67 3.67 4.67 5.67 6.67 7.67 8.67 9.67 10.67
Confidence Level 0.93 2.00 3.08 4.17 5.24 6.25 7.27 8.33 9.35 10.42 11.42 2.31 3.89 5.30 6.70 8.00 9.25 10.55 11.75 13.00 14.20 15.40 2.96 4.67 6.21 7.69 9.09 10.42 11.76 13.16 14.30 15.63 16.95
Failure rate real operation (T1) Failure rate stress test (T2) acceleration factor described exponential function being:
Example following conditions apply operating life stress test: Environmental temperature during stress test 125°C Power dissipation device Thermal resistance junction/environment RthJA system temperature/junction temperature results from: RthJA 150°C Operation field ambient temperature 100°C average power dissipation utilized. This results junction temperature operation 110°C. activation energy used bipolar technologies 125°C
Mean Time Failure (MTTF)
systems which repaired whose devices must changed, e.g., semiconductors, following valid: MTTF
MTTF average fault-free operating period monitored (time) unit.
Accelerating Stress Tests
Innovation cycles field semiconductors becoming shorter shorter. This means that products must brought market quicker. same time, TELEFUNKEN Semiconductors 06.96
resulting acceleration factor
1000
Acceleration factor
l(423K) l(383K)
383K 423K
This signifies that, regarding this example, failure rate lower factor compared stress test. Other accelerating stress tests
11369
Humidity (except displays type TDS.)
85°C
Junction Temperature (°C)
Temperature cycling
Temperature interval specified tests carried according requirements appropriate IEC-standards (see also chapter `Qualification Release').
Figure Acceleration factor different activation energies normalized 55°C
Safety
Reliability Safety
semiconductor devices have potential failing degrading ways that could impair proper operation safety systems. Well-known circuit techniques available protect against minimize effects such occurrences. Examples these techniques include redundant design, self-checking systems other failsafe techniques. Fault analysis systems relating safety recommended. Environmental factors should analyzed circuit designs, particularly safety-related applications. system analysis indicates need highest degree reliability component used, recommended that TEMIC contacted customized reliability program.
Activation Energy
There some conditions which need fulfilled order Arrhenius' method:
validity Arrhenius' rule verified. `Failure-specific' activation energies must determined. These conditions verified series tests. Today, this procedure generally accepted used basis estimating operating life. values activation energies determined experiments different failure mechanisms. Values often used different device groups are: Opto components Bipolar Transistors Diodes using this method, possible provide long-term predictions actual operation semiconductors even with relatively short test periods.
Toxicity
Although gallium arsenide gallium aluminium arsenide both arsenic compounds, under normal conditions they should considered relatively benign. Both materials listed 1980 NIOH `Toxicology Materials' with LD50 values (Lethal Dosis, probability 50%) comparable common table salt. Accidental electrical mechanical damage devices should affect toxic hazard, units applied, handled, etc. other semiconductor device. Although chips small, chemically stable protected device package, conditions that could break these crystalline compounds down into elements other compounds should avoided.
TELEFUNKEN Semiconductors 06.96
Optocouplers Switching Power Supplies
following chapters should give full understanding optocouplers which provide protection against electric shock designs. Safety standards optocouplers intended prevent injury damage electric shock levels electrical interface normally used: Reinforced, safe insulation required optocoupler interface between hazardous voltage circuit (like line) touchable Safety Extra Voltage (SELV) circuit. Basic insulation required optocoupler interface between hazardous voltage circuit non-touchable Extra Voltage (ELV) circuit. most widely used insulation optocouplers switch-mode power supply reinforced insulation (class II). following information enables designer understand safety aspects, basic concept 0884 design requirements applications.
design engineers work with TEMIC optocouplers, they will find some terms definitions data sheets which relate 0884. These will explained: Rated isolation voltages: voltage between input terminals output terminals. Note: voltages peak voltages!
VIOWM maximum rms. voltage value optocouplers assigned TEMIC. This characterizes long term withstand capability insulation.
VIORM maximum recurring peak (repetitive)
voltage value optocoupler assigned TEMIC. This characterizes long-term withstand capability against recurring peak voltages.
VIOis impulse voltage value optocoupler
assigned TEMIC. This characterizes long-term withstand capability against transient over voltages. Isolation test voltage routine tests factor 1.875 higher than specified VIOWM/ VIORM (peak). partial discharge test different test method normal isolation voltage test. This method more sensitive will damage isolation behavior optocoupler like other test methods probably 0884 therefore does require minimum thickness through insulation. philosophy that mechanical distance only does give indication safety reliability coupler. more recommendable check total construction together with assembling performance. partial discharge test method monitor this more reliably. following tests must done guarantee this safety requirement. 100% test (piece piece) second voltage level specified VIOWM/VIORM (peak) multiplied 1.875 test criteria partial discharge less than pico coulomb.
0884 Facts Information
Optocouplers line-voltage separation must have several national standards. most accepted standards are:
America Great Britain SETI, SEMKO, NEMKO, DEMKO Nordic
countries (Europe)
Germany
Today, most manufacturers operate global scale. therefore mandatory perform approvals. 0884 becoming major safety standard world, partly German experts having long record experience this field. therefore worthwhile understanding some requirements methods 0884. moment there drafts which being circulated 0884 international standard. (CO) 1042 describes terms definitions (CO) 1175 test procedure, while test method itself already incorporated 747-5.
lotwise test VIOfor seconds voltage level specified VIOWM/ VIORM (peak) multiplied minute test criteria partial discharge less than pico coulomb.
Design example: line voltage rms. Your application class (DIN/VDE 0110 Part 1/1.89). According table must calculate with maximum line voltage transient over voltage 6000
TELEFUNKEN Semiconductors 06.96
Table Recommended transient overvoltages related line voltage (peak values)
500.V 1500 2500 4000 800.V 1500 2500 4000 6000 1500.V 2500 6000 8000 1500 2500.V 4000 1200 select CNY75 from TEMIC coupler program. next voltage step (VIOWM).The test voltages 1600 CNY75 routine test 6000 1300 sample test. 0884 together with isolation test voltages also require very high isolation resistance, tested ambient temperature 100°C. Apart from these tests running production, Testing Approvals Institute also investigates total construction optocoupler. 0884 requires life tests very special sequence; lots different subgroups tested. sequence main group follows:
VIOWM/VIORM 600.V 1000
Appl. Class
Appl. Class
Appl. Class
Appl. Class
Optocouplers approved 0884 must consequently pass tests undertaken. This then enables ahead start your design.
Layout Design Rules
previous chapter described important safety requirements optocoupler itself; knowledge creepage distance clearance path also important design engineer coupler mounted onto circuit board. Although several different creepage distances referring different safety standards, like office equipment, computer, data equipment etc. requested, there distance which meanwhile dominates switching power supplies: This spacing requirement between circuits: hazardous input voltage power-line voltage) safety voltage. This spacing related power line defines shortest distance between conductive parts (either from input output leads) along case optocoupler, across surface print board between solder eyes optocoupler input/ output leads, shown figure normal distance input output leads optocoupler 0.3". This tight requirement. designer options: provide slit board, then airgap still lower; optocoupler from TEMIC. stands wide-spaced lead form 0.4" obtains creepage, clearance distance. type designation this type coupler example: CNY75G. spacing requirements must also taken into consideration layout board. Figures provide examples your layout. creepage distance also related resistance tracking creepage current stability. plastic material optocoupler itself material board must provide specified creeping-current resistance. TELEFUNKEN Semiconductors 06.96
Cycle test Vibration Shock heat Accelerated damp heat temperature storage (normally -55°C) Damp heat steady state Final measurements.
Finally there another chapter concerning safety ratings. This described 0884. maximum safety ratings electrical, thermal mechanical conditions that exceed absolute maximum ratings normal operations. philosophy that optocouplers must withstand certain exceeding input current, output power dissipation, temperature least weekend. test time actually hours. This simulated space time where failures occur. designer's task create design inside maximum safety ratings.
behavior this resistance tested with special test methods described 112. term "CTI" (Comparative Tracking Index).
0884 requires minimum 175. TEMIC optocouplers have 275.
Creepage path
Clearance path
Figure Isolation creepage/ clearance path
(The creepage path shortest distance between conductive parts along surface isolation material. clearance path shortest distance between conductive parts.)
10.16
0.332
Figure Optocoupler mounting board (side view)
TELEFUNKEN Semiconductors 06.96
Power interface area
0.322 Layer
SELV control circuit area
Power interface area
SELV control circuit area
Figure "Top view optocoupler mounting board" (clearance board: 0.322 creepage path board 0.322
only solder eyes coupler itself board must have distance, also layers located between SELV areas power interface areas.
TEMIC Optocoupler Program
Construction
optocoupler comparable with transformer mechanical relay; advantages smaller dimensions, shorter switching time, contact bounces, interference caused arcs possibility adapting signal already coupler following stage circuit. This combination together with safety aspects provides outstanding advantages power supplies. Safety factors particular depend design, construction selected materials. TEMIC optocouplers designed with coplanar lead frame, where mounted side side. semi-ellipsoid with even better reflection capabilities fitted over each dice. entire system then casted plastic material impermeable infrared range high di-electric strength. whole system molded with special mold compound ensure that external influences such light dust etc. interfere with functioning coupler (see figure 32). This design several advantages: "thickness through insulation", clearance (internally) between input output side fixed 0.75 thus mechanically stable even under thermal overloads, i.e., possibility short circuit caused material deformation excluded. Deviations this distance during production process also excluded. These features specific reasons TEMIC optocouplers well-accepted manufacturers power supplies.
0.75
Figure through TEMIC optocoupler (thickness through insulation)
Overview
information given this brochure enables designer select right optocoupler application. previous chapters focused only safety aspects. Apart from this there other characteristics optocoupler. Table enables designer select optocoupler suit needs. This selection should done using most important characteristics like (Current Transfer Ratio) devices with without base connection. designer data sheets detailed information.
TELEFUNKEN Semiconductors 06.96
n.c.
n.c.
n.c.
Figure Without base connection
Figure With base connection
6-PIN Isolators
Table Devices offering (VDE 0884-tested)
Base Connection
Ungrouped With 4N25(G)V 4N35(G)V Without
Grouped With Without
Grouped With Without
CQY80N(G)
TCDT1100(G) TCDT1101(G) TCDT1102(G) TCDT1103(G)
TCDT1120(G)
100%
TCDT1110(G)
CNY17(G)-1 CNY17(G)-2 CNY17(G)-3
125%
CNY75(G)A CNY75(G)B CNY75(G)C
TCDT1122(G) TCDT1123(G) TCDT1124(G)
200% 320%
wide space 0.4" lead form, board spacing requirements
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10805
9222
Appendix
Approvals List
mentioned before, long there equivalent IEC- standard 0884, optocouplers must still fulfill other national safety standards. copies documents present certificates designer needs worldwide acceptance power supply (see ANT018). approvals below most important. designer needs others, must aware that there many agreements between national institutes, e.g., also accepted CSA/Canada. TEMIC divides optocouplers into "coupling systems". Each coupling system represents same technology, materials etc. coupling systems indicated with capital letters each coupler marked with this coupling system indicator letter. certificates least also refer systems list subtypes related coupling system. user able find selected coupler certificate.
Certified Optocouplers Switching Power Supplies
Coupling System German standard 0884 File System 70753 System 68301 System 70902 System 70977 System 70977 System 70977 American (USA) Test institute 1577 File E76222 Nordic approvals (SETI) British BS415 BS7002 CNY64 CNY65 CNY21N CNY64 CNY65 CNY66 CNY12N CQY80N CQY80NG CNY17(G)1-3 CNY75(G)A-C TCDT1101(G)A-C TCDT1101(G)-1103(G) TCDT1110(G) TCDT1120-1124(G) Coupling System
CNY64 CNY65 CNY66 CNY21N
4N25(G)V 4N35(G)V
K3010P(G)-K3012P(G) K3020P(G)-K3023P(G)
CNY65
Internal stucture
Case (examples)
10532 10537 10531
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Application Optoelectronic Reflex Sensors TCRT1000, TCRT5000, TCRT9000, CNY70
TEMIC optoelectronic sensors contain infrared-emitting diodes radiation source phototransistors detectors.
Typical applications include:
Copying machines Video recorders Proximity switch Vending machines
Printers Object counters Industrial control
Special features:
Compact design Operation range High sensitivity dark current Minimized crosstalk
Ambient light protected Cut-off frequency High quality level, 9000 Automated high-volume production
These sensors present quality perfected products. components based TEMIC's many year's experience Europe's largest producers optoelectronic components.
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Drawings Sensors
9318 9442
TCRT1000
TCRT5000
9320
9320
TCRT9000
CNY70
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Optoelectronic Sensors
many applications, optoelectronic transmitters receivers used pairs linked together optically. Manufacturers fabricate them suitable forms. They available wide range applications ready-to-use components known couplers, transmissive sensors interrupters), reflex couplers reflex sensors. Increased automation industry particular heightened demand these components stimulated development types. tivity phototransistors optimized this wavelength. There focusing elements sensors described, though lenses incorporated inside TCRT5000 both active parts (emitter detector). angular characteristics both divergent. This necessary realize position-independent function easy practical with different reflecting objects. case TCRT5000, concentration beam pattern angle emitter detector, respectively, results operation increased range with optimized resolution. emitting acceptance angles other reflex sensors about 45°. This advantage short distance operation. best local resolution with reflex sensor TCRT9000. main difference between sensor types mechanical outline shown figures, page before), resulting various electrical parameters optical properties. specialization certain appli-cations necessary. Measurements statements data reflex sensors made relative reference surface with defined properties precisely known reflecting properties. This reference medium diffusely reflecting Kodak neutral card, also known grey card (KODAK neutral test card; KODAK publi-cation Q-13, 1527654). also used here reference medium details. reflection factor white side card that grey side 18%. Table shows measured reflection number materials which important practical sensors. values collector current given relative correspond reflection various surfaces with regard sensor's receiver. They were measured transmitter current distance maximum light coupling. These values apply exactly TCRT9000, also valid other reflex sensors. `black-on-white paper' section stands table Although surfaces appear black `naked eye', black surfaces emit quite different reflections wavelength particularly important account this fact when using reflex sensors. reflection various body surfaces infrared range deviate significantly from that visible range.
General Principles
operating principles reflex sensors similar those transmissive sensors. Basically, light emitted transmitter influenced object medium detector. change light signal caused interaction with object then produces change electrical signal optoelectronic receiver. main difference between reflex couplers transmissive sensors relative position transmitter detector with respect each other. case transmissive sensor, receiver opposite transmitter same optical axis, giving direct light coupling between two. case reflex sensor, detector positioned next transmitter, avoiding direct light coupling. transmissive sensor used most applications small distances narrow objects. reflex sensor, however, used wide range distances well materials objects different shapes. sizes virtue open design.
following chapters, will deal with reflex sensors placing particular emphasis their practical use. components TCRT1000, TCRT5000, TCRT9000 CNY70 used examples. However, references made these components their apply sensors similar design. reflex sensors TCRT1000, TCRT5000, TCRT9000 CNY70 contain IR-emitting diodes transmitters phototransistors receivers. transmitters emit radiation wavelength spectral sensi-
TELEFUNKEN Semiconductors 06.96
Table Relative collector current coupling factor) reflex sensor TCRT9000 reflection various materials. Reference white side Kodak neutral card. sensor positioned perpendicular with respect surface. wavelength
100% 100% 100% 30-42% 4-6% 40-80% 120% 12-19% 110% 110% 160% 150% 110% 1.5% 100%
Kodak neutral card White side (reference medium) Gray side Paper Typewriting paper Drawing card, white (Schoeller Durex) Card, light gray Envelope (beige) Packing card (light brown) Newspaper paper Pergament paper Black white typewriting paper Drawing (Higgins, Pelikan, Rotring) Foil (Rotring) Fiber-tip (Edding 400) Fiber-tip pen, black (Stabilo) Photocopy Plotter fiber-tip (0.3 Black needle printer (EPSON LQ-500) (Pelikan) Pencil,
Plastics, glass White Gray Blue, green, yellow, White polyethylene White polystyrene Gray partinax Fiber glass board material Without copper coating With copper coating reverse side Glass, thick Plexiglass, thick Metals Aluminum, bright Aluminum, black anodized Cast aluminum, matt Copper, matt (not oxidized) Brass, bright Gold plating, matt Textiles White cotton Black velvet
Parameters Practical Reflex Sensors
reflex sensor used order receive reflected signal from object. This signal gives information position, movement, size condition (e.g., coding) object question. parameter that describes function optical coupling precisely so-called optical transfer function (OT) sensor. ratio received emitted radiant power.
Ic/IF generally known coupling factor, following approximate relationship exists between B)/h]
Fr/Fe
where current amplification, Ib/r (phototransistor's spectral sensitivity), IF/e (proportionality factor between transmitter). figures curves radiant intensity, transmitter forward current, sensitivity detector irradiance, shown respectively. gradients both equal unity slope. This represents measure deviation curves from ideal linearity parameters. There good proportionality between between where curves parallel unity gradient.
Additional parameters sensor, such operating range, resolution optical distance object, sensitivity switching point case local changes reflection, directly related this optical transfer function. case reflex sensors with phototransistors receivers, ratio Ic/IF (the ratio collector current forward current diode emitter preferred optical transfer function. with optocouplers,
TELEFUNKEN Semiconductors 06.96
Greater proportionality improves relationship between coupling factor, optical transfer function.
Coupling Factor,
case reflex couplers, specification coupling factor only useful defined reflection distance. value given percentage refers here diffuse reflection (90%) white side Kodak neutral card distance maximum light coupling. Apart from transmitter current, temperature, coupling factor also depends distance from reflecting surface frequency that speed reflection change.
reflex sensors, curve coupling factor function transmitter current, flat maximum approximately (figure 37). shown figure, curve coupling factor follows that current amplification, phototransistor. influence temperature coupling factor relatively small changes approximately -10% range +70°C (figure 38). This fairly favorable temperature compensation attributable opposing temperature coefficient diode phototransistor. maximum speed reflection change that detectable sensor signal dependent either switching times threshold frequency, component. threshold frequency switching times reflex sensors TCRT1000, TCRT5000, TCRT9000 CNY70 determined slowest component system this case phototransistor. usual, threshold frequency, defined frequency which value coupling factor fallen (approximately 30%) initial value. frequency increases, coupling factor decreases.
Figure Radiant intensity, (IF), transmitter
Figure Sensitivity reflex sensors' detector
Figure Coupling factor (IF) reflex sensors
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data were recorded Kodak neutral card with diffuse reflection serving reflecting surface, arranged perpendicular sensor. distance, measured from surface reflex sensor. emitter current, held constant during measurement. Therefore, this curve also shows course coupling factor optical transfer function over distance. called working diagram reflex sensor. working diagrams sensors (figure shows maximum certain distance, Here optical coupling strongest. larger distances, collector current falls accordance with square law. When amplitude, fallen more than maximum value, operation range optimum.
Figure Change coupling factor, with temperature,
consequence, reflection change longer easily identified. Figure illustrates change cut-off frequency collector emitter voltages various load resistances. Higher voltages load resistances significantly increase cut-off frequency. cut-off frequencies TEMIC reflex sensors high enough (with kHz) recognize extremely fast mechanical events. practice, recommended large load resistance obtain large signal, dependent speed reflection change. Instead, opposite effect takes place, since signal amplitude markedly reduced decrease cut-off frequency. practice, better approach given data application (such type mechanical movement number markings reflective medium). With these given data, maximum speed which reflection changes determined, thus allowing maximum frequency occurring calculated. maximum permissible load resistance then selected this frequency from diagram function load resistance,
Working Diagram
dependence phototransistor collector current distance, reflecting medium shown figures reflex sensors TCRT1000 TCRT9000 respectively.
Figure Cut-off frequency,
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TCRT5000
TCRT9000
TCRT1000
Figure Working diagram reflex sensors TCRT5000, CNY70, TCRT9000 TCRT1000
Resolution, Trip Point
behavior sensors with respect abrupt changes reflection over displacement path determined parameters: resolution trip point. reflex sensor guided over reflecting surface with reflection surge, radiation reflected back detector changes gradually, abruptly. This depicted figure 41a. surface, seen jointly transmitter detector, determines radiation received sensor. During movement, this surface gradually covered dark reflection range. accordance with curve radiation detected, change collector current abrupt, undergoes wide, gradual transition from higher lower value illustrated figure 41b, collector current falls value Ic2, which corresponds reflection dark range, point points Xd/2, displaced Xd/2. displacement signal corresponds uncertainty when recording position reflection change, determines resolution trip point sensor. trip point position which sensor completely recorded light/ dark transition, that range between points Xd/2 Xd/2 around displacement, therefore, corresponds width tolerance trip point. practice, section lying between difference taken This corresponds rise time generated signal since there both movement speed. Analogous switching time, displacement, described switching distance.
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resolution sensor's capability recognize small structures. Figure illustrates example curve reflection current signal black line measuring width light background (e.g., sheet paper). line light/ dark transitions switching distance Xd/2 therefore, effective twice.
line clearly recognized long line width collector width less than current change, Ic2, that processable signal, becomes increasingly small recognition increasingly uncertain. switching distance better inverse therefore taken resolution sensor.
switching distance, predominantly dependent mechanical/ optical design sensor distance reflecting surface. also influenced relative position transmitter/ detector axis. Figure shows dependence switching distance, distance with sensors placed different positions with respect separation line light/ dark transition. curves marked position diagrams correspond first position. transmitter/ detector axis sensor perpendicular separation line transition. second position (curve transmitter/ detector axis parallel transition. first position reflex sensors have better resolution (smaller switching distances) than position device showing best resolution TCRT9000. recognize lines smaller than half millimeter distance below should remarked that diagram TCRT5000 scaled shows best resolution between sensors show peculiarity that maximum resolution point maximum light coupling, shorter distances.
line width
Figure Abrupt reflection change with associated curve
Reflection Collector current Collector current line width line width
Line
many cases, reflex sensor used detect object that moves distance front background, such sheet paper, band plate. contrast examples examined above, distances object surface background from sensor vary. Since radiation received sensor's detector depends greatly distance, case arise when difference between radiation reflected object background completely equalized distance despite varying reflectance factors. Even sensor sufficient resolution, will longer supply processable signal reflection difference. such applications necessary examine whether there sufficient contrast. This performed with help working diagram sensor reflectance factors materials.
Figure Reflection line width corresponding curve collector current
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TCRT5000
TCRT1000
CNY70
TCRT9000
Figure switching distance function distance reflex sensors TCRT5000, CNY70, TCRT1000 TCRT9000
Sensitivity, Dark Current Crosstalk
lowest photoelectric current that processed useful signal sensor's detector determines weakest usable reflection defines sensitivity reflex sensor. This determined parameters dark current phototransistor crosstalk.
phototransistor receiver exhibits small dark current, ICEO, 25°C. However, dependent applied collector-emitter voltage, VCE, much greater extent temperature, (see figure 44). crosstalk between transmitter detector reflex sensor given with current, Icx. collector current photoelectric transistor measured normal transmitter operating conditions without reflecting medium.
Figure Temperature-dependence collector dark current
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ensured that (ambient) light falls onto photoelectric transistor. This determines possible guarantee avoiding direct optical connection between transmitter detector sensor. current approximately TCRT9000 CNY70, TCRT1000 TCRT5000. also manifested dynamically. this case, origin crosstalk electrical rather than optical. design optical reasons, transmitter detector mounted very close each other. Electrical interference signals generated detector when transmitter operated with pulsed modulated signal. transfer capability interference increases strongly with frequency. Steep pulse edges transmitter's current particularly effective here since they possess large portion high frequencies. TEMIC sensors, crosstalk, Icxac, does become effective until frequencies upwards with transmission approximately between transmitter detector. dark current crosstalk form overall collector fault current, Icf. must observed that dc-crosstalk current, Icxdc, also contains dark current, ICEO, phototransistor. Icxdc Icxac This current determines sensitivity reflex sensor. collector current caused reflection change should always least twice high fault current that processable signal reliably identified sensor.
Indirect ambient light, that ambient light falling onto reflecting objects, mainly reduces contrast between object background feature surroundings. interference caused ambient light predominantly determined various reflection properties material which turn dependent wavelength. ambient light wavelengths which ratio reflection factors object background same similar, influence sensor's function small. effect ignored intensities that excessively large. other hand, object/ background reflection factors differ from each other such that, example, background reflects ambient light much more than object. this case, contrast disappears object cannot detected. also possible that uninteresting object feature detected sensor because reflects ambient light much more than surroundings. practice, ambient light stems most frequently from filament, fluorescent energysaving lamps. Table gives approximate values irradiance these sources. values apply distance approximately spectral range distance 1050 values table only intended guidelines estimating expected ambient radiation. practical applications, generally rather difficult determine ambient light effects precisely. Therefore, attempt keep influence minimum made from outset using suitable mechanical design optical filters. detectors sensors equipped with optical filters block such visible light. Furthermore, mechanical design these components such that possible ambient light fall directly sideways onto detector object distances ambient light source known relatively weak, most cases enough estimate expected power this light irradiated area consider result when dimensioning circuit. operation reflex sensors offers most effective protection against ambient light. Pulsed operation also helpful some cases. Compared with operation, advantages greater transmitter power same time significantly greater protection against faults. only disadvantage greater circuit complexity, which necessary this case. circuit figure example operation with chopped light.
Ambient Light
Ambient light another feature that impair sensitivity and, some circumstances, entire function reflex sensor. However, this artifact component, application specific characteristic. effect ambient light falling directly detector always very troublesome. Weak steady light reduces sensor's sensitivity. Strong steady light can, depending dimensioning (RL, VC), saturate photoelectric transistor. sensor `blind' this condition. longer recognize reflection change. Chopped ambient light gives rise incorrect signals feigns non-existent reflection changes.
TELEFUNKEN Semiconductors 06.96
Table Examples irradiance ambient light sources
Light source distance)
Filament lamp Fluorescent lamp OSRAM Economy lamp OSRAM DULUX
Irradiance (µW/cm2) 1050 Steady light light (peak value)
Frequency (Hz)
Application Examples, Circuits
most important characteristics TEMIC reflex sensors summarized table task this table give quick comparison data choosing right sensor given application.
optimum transmitter current. operation between selected this case. shown figure coupling factor maximum. addition, degradation (i.e., reduction transmitted output with aging) minimum currents under 10000 self heating power loss (approximately mA).
Application Example with Dimensioning
With simple application example, dimensioning reflex sensor shown basic circuit with component data considering boundary conditions application. reflex sensor TCRT9000 used speed control. aluminum disk with radial strips markings fitted motor shaft forms re-flecting object located approximately front sensor. sensor signal sent logic gate further processing. Dimensioning based operation, simplified circuitry.
TCRT 9000 74HCTXX
Figure Reflex sensor basic circuit
Table
Distance optimum coupling Distance best resolution Coupling factor Switching distance (min.) Optimum working distance Operating range CNY70 TCRT9000 TELEFUNKEN Semiconductors 06.96
Parameter
Symbol
Reflex Sensor Type TCRT1000 TCRT5000
Table
Aluminum disk Markings Motor speed Temperature range Ambient light Power supply Position sensor Special attention must also made downstream logic gate. Only components with input offset current used. case gate LS-TTL gate, current applied sensor output condition. -1.6 -400 this above signal current sensor. transistor operational amplifier should connected output sensor when LS-TTL components used. gate from 74HCTxx family used. According data sheet, fault current approximately expected collector current minimum maximum reflection estimated. According working diagram figure 40c, follows that when Icmax Figure shows change collector current approximately 70°C. Another deducted from aging (20% fault current (from crosstalk collector dark current) increases signal current added Ic2. Crosstalk with only TCRT9000 ignored. However, dark current increase temperature 70°C should taken into account. addition, fault current 74HCTxx gate, also added effect indirect incident ambient light most easily seen comparing radiant powers produced ambient light sensor's transmitter reflecting surface. ambient light then taken into account percentage accordance with ratio powers. From table (0.5 Ee(0.5 (0.5/ (Square distance law) 0.025 radiant power 0.025 therefore falls mm2. When sensor's transmitter radiant intensity: Icmax determined from coupling factor, Icmax typical value 2.8% obtained from figure However, this value applies Kodak neutral card reference surface. coupling factor different value surfaces used (typewriting paper blackfiber pen). valid value these material surfaces found table Therefore: 2.63% typing paper 0.28% black-tip (Edding)
Application Data Diameter distance from sensor markings printed aluminum radial black stripes spacings, width stripes spacings front sensor approximately diameter 1000 3000 60°C fluorescent lamp, approximate distance Position sensor/ detector connecting line perpendicular strips
(see figure solid angle surface distance
Temperature aging reduce collector current. They therefore important subtracted from
TELEFUNKEN Semiconductors 06.96
therefore follows radiant power that:
55.5
power 0.025 produced ambient light therefore negligibly compared with corresponding power (approximately transmitter. currents Ic1, would result full reflecting surfaces, that sensor's visual field only measures white black typing paper. However, this case. reflecting surfaces exist form stripes. signal markedly reduced limited resolution sensor stripes narrow. suitable stripe width given distance should therefore selected from figure this case, minimum permissible stripe width approximately distance (position figure 43d). markings measuring width were expediently selected this case. this width, signal reduction about permitted with relatively great certainty, that difference (Ic1 Ic2) subtracted from added Ic2.
level decisive determining resistance,
Circuits with Reflex Sensors
couple factor reflex sensors relatively small. Even case good reflecting surfaces, less than 10%. Therefore, photocurrents practice only region this enough process signals further, additional amplifier necessary sensor output. Figure shows simple circuits with sensors follow-up operational amplifiers. circuit figure transimpedance which offers addition amplification advantage higher cut-off frequency whole layout. similar amplification circuits incorporating transistors shown figure circuit figure simple example operating reflex sensors with chopped light. uses pulse generator constructed with timer This pulse generator operates with pulse duty factor approximately frequency approximately kHz. receiver side, conventional resonance circuit kHz) filters fundamental wave received pulses delievers operational amplifier capacitor, resonance circuit simultaneously represents photo transistor's load resistance. direct current, photo transistor's load resistance very this case approximately 0.4, which means that photo transistor practically shorted ambient light.
suitable load resistance, emitter photo-transistor then determined from high levels 74HCTxx gate. Ic1, i.e., 10.2 16.7 selected corresponding levels determining must used Schmitt trigger 74HCTxx family employed. frequency limit reflex sensor then determined with compared with maximum operating frequency order check whether signal damping attributable frequency that occur. Figure shows approximately, TCRT9000, kHz. Sixteen black/ white stripes appear front sensor each revolution. This produces maximum signal frequency approximately maximum speed 3000 rps. This significantly less than sensor, which means there risk signal damping. circuit figure resistor, used collector photoelectric transistor instead this case, inverted signal somewhat modified dimensioning results. current determines signal level current high. voltages high level TELEFUNKEN Semiconductors 06.96
resonance frequencies below kHz, necessary coils capacitors oscillator become unwieldy expensive. Therefore, active filters, made with operational amplifiers transistors, more suitable (figures 50). possible obtain quality characteristics passive filters. addition that, load resistance emitter photo transistor remarkably higher values than resistance coil. other hand, construction with active filters more compact cheaper. smaller resonance frequency becomes, greater advantages active filters compared resonant circuits. some cases, reflex sensors used count steps objects, while same time recognition change direction rotation movement direction) necessary. circuit shown figure suitable such applications. circuit composed independent channels with reflex sensors. sensor signals formed Schmitt trigger into impulses with step slopes, which supplied pulse inputs binary counter 74LS393. outputs 74LS393 coupled reset inputs. This made such that
first output, whose condition changes from `low' `high', sets directly connected counter. this way, counter other channel deleted blocked. outputs active counter displaced connected more electronics evaluation. should mentioned that such circuit only suited evenly distributed objects constant movements. this case, channels must close each other, that movement both sensors collected successively. circuit also works perfectly last mentioned condition fulfilled. Figure shows pulse circuit combining analog with digital components offering possibility temporary storage signal delivered reflex sensor. timer used pulse generator.
negative pulse timer's output triggers clock input 74HCT74 flip-flop and, same time, reflex sensor's transmitter driver transistor. flip-flop positively triggered, that condition data input this point received edge pulse rises. This then remains stored until next rising edge. reflex sensor therefore only active duration negative pulse only detect reflection changes within this time period. During time negative impulses, electrical optical interferences suppressed. sample hold circuit also employed instead flip-flop. This switched analog switch sensor output pulse rises.
Reflex sensor
Reflex sensor
TLC271 Output
TLC271 Output
Figure Circuits with operational amplifier
Reflex sensor BC178B
Reflex sensor Output
Output
BC108B
Figure Circuits with transistor amplifier
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Reflex sensor
0.86
Output
Figure operation with oscillating circuit suppress ambient light
(pulse width) (period) Timer Reflex sensor (CA3160) Output
Timer dimensions:
Active filter
(6.28
Figure operation with active filter made operational amplifier, circuit dimensions
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Timer (pulse width) (period) Reflex sensor Output
Timer dimensions:
Active filter
(6.28
Figure operation with transistor amplifier active filter
Left
Display system
Reflex sensor
LS393
LS393
report
Reset
74HCT14
Reflex sensor
Right
Display system
B7474
74HCT14
LS393
report
LS393 Figure Circuit objects count recognition movement direction
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Reflex sensor
74HCT74
Figure Pulse circuit with buffer storage
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Cross Reference List Opto
Competition-Type Isolators 3C63B 3C63C 3C91B 3C91C 3C92B 3C92C 3N243 3N244 3N245 3N281 4N25, 4N26 4N27 4N28 4N29 4N29A 4N30 4N31 4N32 4N33 4N35 4N37 4N38 4N38A CLA7 CLA7AA CNX21 CNX35 CNX36 CNX38 CNX82 CNX83 CNY17A CNY17B CNY17C CNY17D CNY17-1 CNY17-2 CNY17-3 CNY17-4 CNY17-F1 CNY17-F2 Hafo Hafo Hafo Hafo Hafo Hafo Optek Optek Optek Texas Various Suppliers Various Suppliers Various Suppliers Various Suppliers Various Suppliers Various Suppliers Various Suppliers Various Suppliers Various Suppliers Various Suppliers Various Suppliers Various Suppliers Various Suppliers Various Suppliers Clairex Clairex Motorola Motorola Various Suppliers Various Suppliers Various Suppliers Various Suppliers Various Suppliers Various Suppliers Competitor Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Device CNY66 CNY66 CNY18 CNY18 CNY18 CNY18 K120P K120P K120P K120P 4N25 4N26 4N27 4N28 4N32 4N32 4N32 4N32 4N32 4N33 4N35 4N37 4N38 4N38A CNY64 CNY64 CNY21N CQY80N CNY75B CNY75B TCDT1100 CQY80N CNY17-1 CNY17-2 CNY17-3 CNY75C CNY17-1 CNY17-2 CNY17-3 CNY75C TCDT1101 TCDT1102 TFK-Device Code Prio
TELEFUNKEN Semiconductors 06.96
CNY17-F3 CNY17-F4 CNY47 CNY47A CNY48 CNY51 CNY57 CNY57A CNY62 CNY63 CNY65 CNY75A CNY75B CNY75C GEPS2001 GFH600-1 GFH600-2 GFH600-3 H11A5 H11A5100 H11A520 H11A550 H11A1 H11A2 H11A3 H11A4 H11AV1 H11AV2 H11AV3 H11B1 H11B2 H11B3 H11J1 H11J2 H11J3 H11J4 H11J5 H11L1 H11L2 H.24A1 H.24A2 IL-1 IL-100 IL-101 IL-201 Competition-Type Various Suppliers Various Suppliers Siemens Siemens Siemens Siemens Competitor Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Device TCDT1103 TCDT1124 4N25 4N25 4N32 CNY75B CNY17-1 CQY80N CNY21N CNY21N CNY65 CNY75A CNY75B CNY75C CNY80N CNY75A CNY75B CNY75C 4N28 4N35 CQY80N CQY80N CQY80N 4N26 4N25 4N27 CNY64 CNY64 CNY64 4N32 4N32 4N32 K3010P K3010P K3010P K3010P K3010P TCDS1001 TCDS1001 CNY64 CNY64 4N25 TCDS1001 TCDS1001 CNY75A TFK-Device Code Prio
TELEFUNKEN Semiconductors 06.96
IL-202 IL-250 IL-5 IL-74 IL-CT6 ILCA2-30 ILD-1 ILD-74 ILQ-1 ILQ-74 MCA230 MCA230 MCA231 MCA231 MCP3009 MCP3010 MCP3011 MCP3020 MCP3021 MCP3022 MCT2 MCT2E MCT210 MCT210 MCT2200 MCT2201 MCT2202 MCT26 MCT26 MCT270 MCT271 MCT272 MCT273 MCT274 MCT275 MCT276 MCT277 MCT3 MCT4 MCT6 MCT66 MOC1005 MOC1006 MOC119 MOC205 Competition-Type Siemens Siemens Siemens Siemens Siemens Siemens Siemens Siemens Siemens Siemens Motorola Motorola Motorola Motorola Competitor Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator Isolator I
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