Single IGBTMODU-Series Module Amperes/600 Volts Mounting Hol

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Single IGBTMODU-Series Module Amperes/600 Volts Mounting Hol

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CM600HU-12H
Single IGBTMODU-Series Module
Amperes/600 Volts
Mounting Holes
NUTS
NUTS Measured Point
Description: Powerex IGBTMODModules designed switching applications. Each module consists IGBT Transistor single configuration with reverse-connected super-fast recovery freewheel diode. components interconnects isolated from heat sinking baseplate, offering simplified system assembly thermal management. Features: Drive Power VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate Easy Heat Sinking Applications: Motor Control Motion/Servo Control Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select complete module number desire from table i.e. CM600HU-12H 600V (VCES), Ampere Single IGBTMODPower Module.
Type Current Rating Amperes VCES Volts
Outline Drawing Circuit Diagram Dimensions Inches 4.21 3.66±0.01 2.44 1.89±0.01 0.53 0.49 0.39 Millimeters 107.0 93.0±0.25 62.0 48.0±0.25 13.5 12.55 10.0 Dimensions Inches 1.02 0.37 1.14 0.81 0.26 Dia. 1.34 +0.04/-0.02 1.02 +0.04/-0.02 Millimeters 26.0 29.0 20.5 Dia. +1.0/-0.5 +1.0/-0.5
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HU-12H Single IGBTMODU-Series Module Amperes/600 Volts
Absolute Maximum Ratings, unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current 25°C) Peak Collector Current 150°C) Emitter Current** 25°C) Peak Emitter Current** Maximum Collector Dissipation 25°C) Mounting Torque, Main Terminal Mounting Torque, Mounting Mounting Torque, Terminal Weight Isolation Voltage (Main Terminal Baseplate, min.) Symbol Tstg VCES VGES Viso CM600HU-12H 1200* 1200* 1560 2500 Units Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb in-lb Grams Volts
Pulse width repetition rate should such that device junction temperature (Tj) does exceed Tj(max) rating. **Represents characteristics anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) Test Conditions VCES, VGES, 60mA, 600A, 15V, 25°C 600A, 15V, 125°C Total Gate Charge Emitter-Collector Voltage* 300V, 600A, 600A, Min. Typ. 1200 Max. Units Volts Volts Volts Volts
Pulse width repetition rate should such that device junction temperature (Tj) does exceed Tj(max) rating.
Dynamic Electrical Characteristics, unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) td(off) 300V, 600A, VGE1 VGE2 15V, Resistive Load Switching Operation 600A, diE/dt -1200A/µs 600A, diE/dt -1200A/µs 10V, Test Conditions Min. Typ. 1.44 Max. 52.8 28.8 Units
Diode Reverse Recovery Time Diode Reverse Recovery Charge
Thermal Mechanical Characteristics, unless otherwise specified
Characteristics Thermal Resistance, Junction Case Thermal Resistance, Junction Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Test Conditions IGBT Module FWDi Module Module, Thermal Grease Applied Min. Typ. 0.02 Max. 0.08 0.12 Units °C/W °C/W
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HU-12H Single IGBTMODU-Series Module Amperes/600 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
1200
COLLECTOR CURRENT, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
25oC
1200
COLLECTOR CURRENT, (AMPERES)
25°C 125°C 25°C 125°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
1200
GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
25°C
25°C
CAPACITANCE, Cies, Coes, Cres, (nF)
1200A
EMITTER CURRENT, (AMPERES)
Cies
Coes
600A
Cres
240A
1MHz
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
10-1 10-1
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt -1200A/µsec 25°C
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE,
td(off)
SWITCHING TIME, (ns) REVERSE RECOVERY TIME, trr, (ns)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
600A
200V
td(on)
300V
300V ±15V 125°C
COLLECTOR CURRENT, (AMPERES)
EMITTER CURRENT, (AMPERES)
1200 1600
GATE CHARGE, (nC)
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HU-12H Single IGBTMODU-Series Module Amperes/600 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) (NORMALIZED VALUE)
10-3
10-2
10-1
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) (NORMALIZED VALUE)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi)
10-3
10-2
10-1
Single Pulse 25°C Unit Base Rth(j-c) 0.08°C/W
Single Pulse 25°C Unit Base Rth(j-c) 0.12°C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME,
10-4
10-3 10-3
10-3 10-5
TIME,
10-4
10-3 10-3

Single IGBTMODU-Series Module Amperes/600 Volts Mounting Hol

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