Dual IGBTMODF-Series Module Amperes/250 Volts Measured Point

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Dual IGBTMODF-Series Module Amperes/250 Volts Measured Point

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CM600DU-5F
Dual IGBTMODF-Series Module
Amperes/250 Volts
Measured Point TYP.)
C2E1
NUTS TYP)
THICK WIDE PLACES)
LABEL
C2E1
Description: Powerex IGBTMODModules designed switching applications. Each module consists IGBT Transistors halfbridge configuration with each transistor having reverseconnected super-fast recovery free-wheel diode. components interconnects isolated from heat sinking baseplate, offering simplified system assembly thermal management. Features: Drive Power VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate Easy Heat Sinking
Outline Drawing Circuit Diagram Dimensions Inches 4.33 3.15 Millimeters 110.0 80.0 Dimensions Inches 0.33 0.10 0.85 0.98 0.86 0.26 Dia. 0.02 0.110 1.08 Millimeters 21.6 25.0 21.75 Dia. 2.79 27.35
1.14 +0.04/-0.02 29.0 +1.0/-0.5 3.66±0.01 2.44±0.01 0.83 0.16 0.24 0.59 0.55 93.0±0.25 62.0±0.25 21.0 15.0 14.0
Applications: Motor Control Motion/Servo Control Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select complete module number desire from table i.e. CM600DU-5F 250V (VCES), Ampere Dual IGBTMODPower Module.
Type Current Rating Amperes VCES Volts
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-5F Dual IGBTMODF-Series Module Amperes/250 Volts
Absolute Maximum Ratings, unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current 25°C) Peak Collector Current Emitter Current** 25°C) Peak Emitter Current** Maximum Collector Dissipation 25°C, 150°C) Mounting Torque, Main Terminal Mounting Torque, Mounting Weight Isolation Voltage (Main Terminal Baseplate, min.) Symbol Tstg VCES VGES IC(rms) IE(rms) CM600DU-5F 1200* 1200* 1100 Units Volts Volts Amperes Amperes (rms) Amperes Amperes Amperes (rms) Amperes Watts in-lb in-lb Grams Volts
Viso 2500 Pulse width repetition rate should such that device junction temperature (Tj) does exceed Tj(max) rating. **Represents characteristics anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) Test Conditions VCES, VGES, 60mA, 600A, 10V, 25°C 600A, 10V, 125°C Total Gate Charge Emitter-Collector Voltage** 100V, 600A, 600A, Min. Typ. 2200 Max. Units Volts Volts Volts Volts
**Represents characteristics anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Diode Reverse Recovery Time** Diode Reverse Recovery Charge** Symbol Cies Coes Cres td(on) td(off) 100V, 600A, VGE1 VGE2 10V, Inductive Load Switching Operation 10V, Test Conditions Min. Typ. 20.0 Max. 1100 Units
600A **Represents characteristics anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-5F Dual IGBTMODF-Series Module Amperes/250 Volts
Thermal Mechanical Characteristics, unless otherwise specified
Characteristics Thermal Resistance, Junction Case Thermal Resistance, Junction Case Contact Thermal Resistance Thermal Resistance, Junction Case Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q Test Conditions IGBT Module FWDi Module Module, Thermal Grease Applied IGBT Module Reference Point Under Chip Min. Typ. 0.020 Max. 0.11 0.20 0.05 Units °C/W °C/W °C/W °C/W
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
1200
COLLECTOR CURRENT, (AMPERES)
1200
6.25 25oC
COLLECTOR CURRENT, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
25°C 125°C
25°C 125°C
5.75
5.25
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
1200
COLLECTOR-CURRENT, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE (TYPICAL)
25°C
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) EMITTER CURRENT, (AMPERES)
25°C
CAPACITANCE, Cies, Coes, Cres, (nF)
Cies
1200A 240A 600A
Coes 1MHz Cres
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
10-1
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-5F Dual IGBTMODF-Series Module Amperes/250 Volts
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
di/dt -600A/µsec 25°C
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE,
td(off)
REVERSE RECOVERY TIME, trr, (ns)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
td(on)
SWITCHING TIME, (ns)
600A
100V ±10V 25°C Inductive Load
100V
100V ±10V 125°C Inductive Load
COLLECTOR CURRENT, (AMPERES)
EMITTER CURRENT, (AMPERES)
1500 3000 4500
GATE CHARGE, (nC)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) (NORMALIZED VALUE)
10-3
10-2
10-1
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) (NORMALIZED VALUE)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi)
10-3
10-2
10-1
Single Pulse 25°C Unit Base Rth(j-c) 0.11°C/W
Single Pulse 25°C Unit Base Rth(j-c) 0.20°C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME,
10-4
10-3 10-3
10-3 10-5
TIME,
10-4
10-3 10-3

Dual IGBTMODF-Series Module Amperes/250 Volts Measured Point

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