IGBTMODU-Series Module Amperes/1200 Volts Mounting Holes NUT

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IGBTMODU-Series Module Amperes/1200 Volts Mounting Holes NUT

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CM50TU-24H
IGBTMODU-Series Module
Amperes/1200 Volts
Mounting Holes NUTS 0.110
Measured Point
Measured Point
Description: Powerex IGBTMODModules designed switching applications. Each module consists IGBT Transistors three phase bridge configuration, with each transistor having reverseconnected super-fast recovery free-wheel diode. components interconnects isolated from heat sinking baseplate, offering simplified system assembly thermal management. Features: Drive Power VCE(sat) Discrete Super-Fast Recovery (135ns) Free-Wheel Diode Isolated Baseplate Easy Heat Sinking Applications: Motor Control Motion/Servo Control Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select complete module number desire from table i.e. CM50TU-24H 1200V (VCES), Ampere SixIGBT IGBTMODPower Module.
Type Current Rating Amperes VCES Volts
Outline Drawing Circuit Diagram Dimensions Inches 4.02 3.15±0.01 3.58 2.91±0.01 0.43 0.79 0.39 0.75 0.79 Millimeters 102.0 80.0±0.25 91.0 74.0±0.25 11.0 20.0 10.0 19.1 20.0 Dimensions Inches 0.05 0.74 1.55 0.12 0.32 1.02 0.47 0.22 Dia. Millimeters 1.25 18.7 39.3 3.05 26.0 11.85 Dia.
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TU-24H IGBTMODU-Series Module Amperes/1200 Volts
Absolute Maximum Ratings, unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current 25°C) Peak Collector Current 150°C) Emitter Current** Peak Emitter Current** Maximum Collector Dissipation 150°C) Mounting Torque, Main Terminal Mounting Torque, Mounting Weight Isolation Voltage (Main Terminal Baseplate, min.) Symbol Tstg VCES VGES Viso CM50TU-24H 1200 100* 100* 2500 Units Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts
Pulse width repetition rate should such that device junction temperature (Tj) does exceed Tj(max) rating. **Represents characteristics anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) Test Conditions VCES, VGES, 5mA, 50A, 15V, 25°C 50A, 15V, 125°C Total Gate Charge Emitter-Collector Voltage* 600V, 50A, 50A, Min. Typ. 2.85 Max. Units Volts Volts Volts Volts
Pulse width repetition rate should such that device junction temperature (Tj) does exceed Tj(max) rating.
Dynamic Electrical Characteristics, unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) td(off) 600V, 50A, VGE1 VGE2 15V, Resistive Load Switching Operation 50A, diE/dt -100A/µs 50A, diE/dt -100A/µs 10V, Test Conditions Min. Typ. 0.28 Max. Units
Diode Reverse Recovery Time Diode Reverse Recovery Charge
Thermal Mechanical Characteristics, unless otherwise specified
Characteristics Thermal Resistance, Junction Case Thermal Resistance, Junction Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Test Conditions IGBT Module Free-Wheel Diode Module Module, Thermal Grease Applied Min. Typ. 0.018 Max. 0.31 Units °C/W °C/W °C/W
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TU-24H IGBTMODU-Series Module Amperes/1200 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT, (AMPERES) COLLECTOR CURRENT, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
25°C 125°C 25°C 125°C
25oC
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
25°C 25°C 100A
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, (AMPERES)
Cies
Coes
10-1
Cres 1MHz
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
10-2 10-1
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt -100A/µsec 25°C
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE,
REVERSE RECOVERY TIME, trr, (ns)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
SWITCHING TIME, (ns)
td(off) td(on)
400V 600V
600V ±15V 125°C
COLLECTOR CURRENT, (AMPERES)
EMITTER CURRENT, (AMPERES)
GATE CHARGE, (nC)
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TU-24H IGBTMODU-Series Module Amperes/1200 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) (NORMALIZED VALUE)
10-3
10-2
10-1
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) (NORMALIZED VALUE)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi)
10-3
10-2
10-1
Single Pulse 25°C Unit Base Rth(j-c) 0.31°C/W
Single Pulse 25°C Unit Base Rth(j-c) 0.7°C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME,
10-4
10-3 10-3
10-3 10-5
TIME,
10-4
10-3 10-3

IGBTMODU-Series Module Amperes/1200 Volts Mounting Holes NUT

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