Six-IGBT IGBTMODH-Series Module Amperes/1400 Volts TYP.)
|
|
|
Top Searches for this datasheet
CM50TF-28H
Six-IGBT IGBTMODH-Series Module
Amperes/1400 Volts
TYP.)
DIA. TYP.)
.110
Description: Powerex IGBTMODModules designed switching applications. Each module consists IGBT Transistors three phase bridge configuration, with each transistor having reverseconnected super-fast recovery free-wheel diode. components interconnects isolated from heat sinking baseplate, offering simplified system assembly thermal management. Features: Drive Power VCE(sat) Discrete Super-Fast Recovery (135ns) Free-Wheel Diode High Frequency Operation (20-25kHz) Isolated Baseplate Easy Heat Sinking Applications: Motor Control Motion/Servo Control Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select complete part module number desire from table below -i.e. CM50TF-28H 1400V (VCES), Ampere Six-IGBT IGBTMODPower Module.
Type Current Rating Amperes VCES Volts
Outline Drawing Circuit Diagram Dimensions Inches 4.02±0.02 3.58±0.02 3.150±0.01 2.913±0.01 1.69 Millimeters 102.0±0.5 91.0±0.5 80.0±0.25 74.0±0.25 43.0 Dimensions Inches 0.65 0.55 0.47 0.43 0.39 0.33 0.32 0.24 Rad. 0.24 0.22 Dia. Metric 0.08 0.28 Millimeters 16.5 14.0 12.0 11.0 10.0 Rad. Dia.
1.18 +0.06/-0.02 +1.5/-0.5 1.18 1.16 1.06 0.96 0.87 0.79 0.67 30.0 29.5 27.0 24.5 22.0 20.0 17.0
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TF-28H Six-IGBT IGBTMODH-Series Module Amperes/1400 Volts
Absolute Maximum Ratings, unless otherwise specified
Characteristics Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E-SHORT) Gate-Emitter Voltage (C-E-SHORT) Collector Current Peak Collector Current Diode Forward Current Diode Forward Pulse Current Power Dissipation Max. Mounting Torque Terminal Screws Max. Mounting Torque Mounting Screws Module Weight (Typical) Isolation
Pulse width repetition rate should such that device junction temperature does exceed device rating.
Symbol Tstg VCES VGES IECM VRMS
CM50TF-28H 1400 100* 100* 2500
Units Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts
Static Electrical Characteristics, unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) Test Conditions VCES, VGES, 5mA, 50A, 50A, 15V, 150°C Total Gate Charge Diode Forward Voltage 800V, 50A, 50A, Min. Typ. 2.95 Max. 4.2** Units Volts Volts Volts Volts
Pulse width repetition rate should such that device junction temperature rise negligible.
Dynamic Electrical Characteristics, unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) td(off) 50A, diE/dt -100A/µs 50A, diE/dt -100A/µs 800V, 50A, VGE1 VGE2 15V, 10V, 1MHz Test Conditions Min. Typ. Max. Units
Diode Reverse Recovery Time Diode Reverse Recovery Charge
Thermal Mechanical Characteristics, unless otherwise specified
Characteristics Thermal Resistance, Junction Case Thermal Resistance, Junction Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT FWDi Module, Thermal Grease Applied Min. Typ. Max. 0.31 0.70 0.033 Units °C/W °C/W °C/W
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TF-28H Six-IGBT IGBTMODH-Series Module Amperes/1400 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT, (AMPERES) COLLECTOR CURRENT, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
25°C 125°C 25°C 125°C
25oC
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-CURRENT, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
25°C 25°C
EMITTER CURRENT, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF)
100A
Cies
Coes
10-1
1MHz
Cres
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
10-2 10-1
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE,
REVERSE RECOVERY TIME, (ns)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
SWITCHING TIME, (ns)
td(off)
600V 800V
td(on)
800V ±15V 125°C
di/dt -100A/µsec 25°C
COLLECTOR CURRENT, (AMPERES)
EMITTER CURRENT, (AMPERES)
10-1
GATE CHARGE, (nC)
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TF-28H Six-IGBT IGBTMODH-Series Module Amperes/1400 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, th(j-c) (NORMALIZED VALUE)
Single Pulse 25°C Unit Base th(j-c) 0.31°C/W
NORMALIZED TRANSIENT THERMAL IMPEDANCE, th(j-c) (NORMALIZED VALUE)
10-3
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1
10-3
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1
Single Pulse 25°C Unit Base th(j-c) 0.7°C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME,
10-4
10-3 10-3
10-3 10-5
TIME,
10-4
10-3 10-3
Other recent searches
K4M28163LF - K4M28163LF K4M28163LF Datasheet
AN8488SB - AN8488SB AN8488SB Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
