Six-IGBT IGBTMODH-Series Module Amperes/1200 Volts TYP.)

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Six-IGBT IGBTMODH-Series Module Amperes/1200 Volts TYP.)

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CM50TF-24H
Six-IGBT IGBTMODH-Series Module
Amperes/1200 Volts
TYP.)
DIA. TYP.)
.110
Description: Powerex IGBTMODModules designed switching applications. Each module consists IGBT Transistors three phase bridge configuration, with each transistor having reverseconnected super-fast recovery free-wheel diode. components interconnects isolated from heat sinking baseplate, offering simplified system assembly thermal management. Features: Drive Power VCE(sat) Discrete Super-Fast Recovery (135ns) Free-Wheel Diode High Frequency Operation (20-25kHz) Isolated Baseplate Easy Heat Sinking Applications: Motor Control Motion/Servo Control Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select complete part module number desire from table below -i.e. CM50TF-24H 1200V (VCES), Ampere Six-IGBT IGBTMODPower Module.
Type Current Rating Amperes VCES Volts
Outline Drawing Circuit Diagram Dimensions Inches 4.02±0.02 3.58±0.02 3.15±0.01 2.913±0.01 1.69 Millimeters 102.0±0.5 91.0±0.5 80.0±0.25 74.0±0.25 43.0 Dimensions Inches 0.65 0.55 0.47 0.43 0.39 0.33 0.32 0.24 Rad. 0.24 0.22 Dia. Metric 0.08 0.28 Millimeters 16.5 14.0 12.0 11.0 10.0 Rad. Dia.
1.18 +0.06/-0.02 +1.5/-0.5 1.18 1.16 1.06 0.96 0.87 0.79 0.67 30.0 29.5 27.0 24.5 22.0 20.0 17.0
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TF-24H Six-IGBT IGBTMODH-Series Module Amperes/1200 Volts
Absolute Maximum Ratings, unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage Collector Current Peak Collector Current Diode Forward Current Diode Forward Surge Current Power Dissipation Max. Mounting Torque Mounting Screws Max. Mounting Torque Mounting Screws Module Weight (Typical) Isolation
Pulse width repetition rate should such that device junction temperature does exceed device rating.
Symbol Tstg VCES VGES VRMS
CM50TF-24H 1200 100* 100* 2500
Units Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts
Static Electrical Characteristics, unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) Test Conditions VCES, VGES, 5mA, 50A, 50A, 15V, 150°C Total Gate Charge Diode Forward Voltage 600V, 50A, 50A, Min. Typ. 2.25 Max. 3.4** Units
Volts Volts Volts Volts
Pulse width repetition rate should such that device junction temperature rise negligible.
Dynamic Electrical Characteristics, unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) td(off) 50A, diE/dt -100A/µs 50A, diE/dt -100A/µs 600V, 50A, VGE1 VGE2 15V, 10V, 1MHz Test Conditions Min. Typ. 0.37 Max. Units
Diode Reverse Recovery Time Diode Reverse Recovery Charge
Thermal Mechanical Characteristics, unless otherwise specified
Characteristics Thermal Resistance, Junction Case Thermal Resistance, Junction Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT FWDi Module, Thermal Grease Applied Min. Typ. Max. 0.31 0.70 0.033 Units °C/W °C/W °C/W
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TF-24H Six-IGBT IGBTMODH-Series Module Amperes/1200 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT, (AMPERES) COLLECTOR CURRENT, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
25oC
25°C 125°C 25°C 125°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-CURRENT, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
25°C 25°C 100A
EMITTER CURRENT, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF)
Cies
Coes
1MHz
Cres
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
10-1 10-1
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE,
REVERSE RECOVERY TIME, (ns)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
SWITCHING TIME, (ns)
td(off)
400V 600V
td(on) 600V ±15V 125°C
di/dt -100A/µsec 25°C
COLLECTOR CURRENT, (AMPERES)
EMITTER CURRENT, (AMPERES)
10-1
GATE CHARGE, (nC)
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TF-24H Six-IGBT IGBTMODH-Series Module Amperes/1200 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, th(j-c) (NORMALIZED VALUE)
Single Pulse 25°C Unit Base th(j-c) 0.31°C/W
NORMALIZED TRANSIENT THERMAL IMPEDANCE, th(j-c) (NORMALIZED VALUE)
10-3
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1
10-3
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1
Single Pulse 25°C Unit Base th(j-c) 0.7°C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME,
10-4
10-3 10-3
10-3 10-5
TIME,
10-4
10-3 10-3

Six-IGBT IGBTMODH-Series Module Amperes/1200 Volts TYP.)

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