Four IGBTMODU-Series Module Amperes/1200 Volts Mounting Hole

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Four IGBTMODU-Series Module Amperes/1200 Volts Mounting Hole

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CM50BU-24H
Four IGBTMODU-Series Module
Amperes/1200 Volts
Mounting Holes
Measured Point
Measured Point
NUTS
0.110
Description: Powerex IGBTMODModules designed switching applications. Each module consists four IGBT Transistors H-Bridge configuration, with each transistor having reverse-connected super-fast recovery freewheel diode. components interconnects isolated from heat sinking baseplate, offering simplified system assembly thermal management. Features: Drive Power VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate Easy Heat Sinking Applications: Motor Control Motion/Servo Control Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select complete module number desire from table i.e. CM50BU-24H 1200V (VCES), Ampere FourIGBT IGBTMODPower Module.
Type Current Rating Amperes VCES Volts
Outline Drawing Circuit Diagram Dimensions Inches 2.83 2.17±0.01 3.58 2.91±0.01 0.43 0.79 0.69 0.75 0.39 0.41 0.05 Millimeters 72.0 55±0.25 91.0 74.0±0.25 11.0 20.0 17.5 19.1 10.0 10.5 1.25 Dimensions Inches 0.74 0.02 1.55 0.63 0.57 0.22 Dia. 0.32 1.02 0.59 0.20 1.61 Millimeters 18.7 39.3 16.0 14.4 Dia. 26.0 15.0 41.0
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50BU-24H Four IGBTMODU-Series Module Amperes/1200 Volts
Absolute Maximum Ratings, unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current 25°C) Peak Collector Current 150°C) Emitter Current** 25°C) Peak Emitter Current** Maximum Collector Dissipation 25°C) Mounting Torque, Main Terminal Mounting Torque, Mounting Weight Isolation Voltage (Main Terminal Baseplate, min.) Symbol Tstg VCES VGES Viso CM50BU-24H 1200 100* 100* 2500 Units Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts
Pulse width repetition rate should such that device junction temperature (Tj) does exceed Tj(max) rating. **Represents characteristics anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) Test Conditions VCES, VGES, 5.0mA, 50A, 15V, 25°C 50A, 15V, 125°C Total Gate Charge Emitter-Collector Voltage* 600V, 50A, 50A, Min. Typ. 2.85 Max. Units Volts Volts Volts Volts
Pulse width repetition rate should such that device junction temperature (Tj) does exceed Tj(max) rating.
Dynamic Electrical Characteristics, unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) td(off) 600V, 50A, VGE1 VGE2 15V, Resistive Load Switching Operation 50A, diE/dt -100A/µs 50A, diE/dt -100A/µs 10V, Test Conditions Min. Typ. 0.28 Max. Units
Diode Reverse Recovery Time Diode Reverse Recovery Charge
Thermal Mechanical Characteristics, unless otherwise specified
Characteristics Thermal Resistance, Junction Case Thermal Resistance, Junction Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Test Conditions IGBT Module FWDi Module Module, Thermal Grease Applied Min. Typ. Max. 0.31 Units °C/W °C/W °C/W
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50BU-24H Four IGBTMODU-Series Module Amperes/1200 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR CURRENT, (AMPERES)
25oC
25°C 125°C
25°C 125°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
25°C
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, (AMPERES)
25°C Cies
100A
Coes
10-1
Cres 1MHz
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
10-2 10-1
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt -100A/µsec 25°C
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE,
REVERSE RECOVERY TIME, trr, (ns)
600V ±15V 125°C td(off)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
SWITCHING TIME, (ns)
400V
td(on)
600V
COLLECTOR CURRENT, (AMPERES)
EMITTER CURRENT, (AMPERES)
GATE CHARGE, (nC)
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50BU-24H Four IGBTMODU-Series Module Amperes/1200 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) (NORMALIZED VALUE)
10-3
10-2
10-1
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) (NORMALIZED VALUE)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi)
10-3
10-2
10-1
Single Pulse 25°C Unit Base Rth(j-c) 0.31°C/W
Single Pulse 25°C Unit Base Rth(j-c) 0.7°C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME,
10-4
10-3 10-3
10-3 10-5
TIME,
10-4
10-3 10-3

Four IGBTMODU-Series Module Amperes/1200 Volts Mounting Hole

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