LIMIN CM1200HA-50H HIGH POWER SWITCHING INSULATED TYPE

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LIMIN CM1200HA-50H HIGH POWER SWITCHING INSULATED TYPE

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LIMIN
CM1200HA-50H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM1200HA-50H
1200A VCES 2500V Insulated Type 1-element pack
APPLICATION Inverters, Converters, choppers, Induction heating, converters.
OUTLINE DRAWING CIRCUIT DIAGRAM
Dimensions
57±0.25
57±0.25
57±0.25
NUTS
124±0.25
CIRCUIT DIAGRAM
20.25 41.25 NUTS 79.4 7MOUNTING HOLES
61.5
61.5
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
LABEL
Aug.1998
ation ecific chan fiits tric Notice parame
LIMIN
CM1200HA-50H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS 25°C)
Symbol VCES VGES (Note (Note (Note Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight Short Short 25°C Pulse 25°C Pulse 25°C Conditions Ratings 2500 1200 2400 1200 2400 10420 +150 +125 6000 6.67 8.24 2.84 3.43 0.88 1.08 Unit
(Note (Note
Main terminal Base, minute Main terminals screw Mounting screw Auxiliary terminals screw Typical value
ELECTRICAL CHARACTERISTICS 25°C)
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres (on) (off) (Note (Note (Note Rth(j-c)Q Rth(j-c)R Rth(c-f)
Note
Parameter Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance
Test conditions VCES, 120mA, VGES, 25°C 1200A, 125°C 1250V, 1200A, 1250V, 1200A VGE1 VGE2 Resistive load switching operation 1200A, 1200A -2400A IGBT part FWDi part Case fin, conductive grease applied
Limits 3.20 3.60 2.90 0.006
4.16 1.60 2.00 2.50 1.00 3.77 1.20 0.012 0.024
Unit °C/W °C/W °C/W
(Note
VEC, trr, die/dt represent characteristics anti-parallel, emitter collector free-wheel diode. Pulse width repetition rate should such that device junction temp. does exceed Tjmax rating. Junction temperature (Tj) should increase beyond 150°C. Pulse width repetition rate should such cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Aug.1998
ation ecific chan fiits Notice parame
LIMIN
CM1200HA-50H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 2400 25°C
COLLECTOR CURRENT
TRANSFER CHARACTERISTICS (TYPICAL) 2400 2000 1600 1200
COLLECTOR CURRENT
2000 1600 1200
25°C 125°C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat)
GATE-EMITTER VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 25°C
EMITTER CURRENT
25°C 125°C 1000 1500 2000 2500
COLLECTOR CURRENT
EMITTER-COLLECTOR VOLTAGE
Aug.1998

LIMIN CM1200HA-50H HIGH POWER SWITCHING INSULATED TYPE

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