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Section SEMICELL® Power Semiconductor Chips
following tables contain standard types. Other types selections available special request. Please contact your SEMIKRON office.
SEMICELL® Rectifier Diode Chips
Types
VRRM
VRSM, VRRM
IFAV max.
SKN-SW 2,5/. SKN-SW 2,5/. SKN-SW 3,5/. SKN-SW
1600 1600 1600
Tcase Rthjc (Tamb) (Rthja) °C/W (45) (80) (45) (80) (45) (40) 0,55 0,45 0,35 0,45 0,35 0,20 0,16 0,18
IFSM Tvjmax
1,55 1000
V(TO)
Tvjmax Fig.
Tvjmax 0,85 0,85 0,85 0,85 0,85 0,85 0,85 0,85 0,85 0,85 0,85 0,85 0,85 1,45
11,3
SKN-TABL 8H/. SKN-TABL 9H/. SKN-TABL 11H/. SKN-TABL QU/. SKN-TABL 11,3 QU/. SKN-TABL 11RD/. SKN-TABL 13RD/. SKN-TABL 18RD/. SKN-TABL 23RD/. SKR-TABL 4,2QU/.5,6) SKR-TABL 5,6QU/.5,6) SKR-TABL 6,2QU/.5,6) SKR-TABL 7,0QU/.5,6) SKR-TABL 8,9QU/.5,6) SKR-GSW18,2QU/.
1600 1600 1600 1600 1600 1600 1600 1600 1600
1000 1500 1,55 1,95 2000 1,35 1500 2000 5000 8000 1150 1700 6000 1,55 1,35 1,15
13,5 18,2
1800 1800 1800 1800 1800 1800
SEMICELL® Fast Rectifier Diode Chips
Types VRSM, VRRM
TABL TABL11 TABL14 TABL14 TABL18
Remarks
1200 1000 1500 1500 1200 1500
IFSM V(TO) Tcase Rthjc max. (Tamb) (Rthja) Tvjmax Tvjmax °C/W (45) (60) (45) (40) 1,25 2,15 1200 1,75 2100 1,80 2100 1,95 3000
IFAV
0,45 0,45 0,25 0,20
Tvjmax Fig.
Available selections VRRM 1000 e.g. SKR-TABL QU/08.10 1200 1400 e.g. SKR-TABL QU/12.14 1600 1800 e.g. SKR-TABL QU/16.18 glass passivated sandwich: Molybdenum Siliconchip/Molybdenum SKN-TABL silicone passivated silicon diode chip, Mesa edge, cathode (solderable); Bottom anode (solderable) SKR-TABL Glass passivated silicon diode chip; Bottom cathode Mesa edge, anode (solderable), Bottom cathode (solderable)
Metallisation Version "B": anode bondable AL-contact; bondable area -1,4) 1,4): suffix request); IFSM depends number bonds Soldering temperature
SEMIKRON
0896
SEMICELL® Ultrafast Epitaxial Rectifier Diode Chips
Types VRSM,VRRM IFAV max. Tcase Tvjmax °C/W 0,85 0,22 2800 1,55 Rthjc IFSM V(TO) Tvjmax Fig.
SKCD 47E.B SKR-Tabl.13,3QE.
Tvjmax 0,75
13,3
SEMICELL® Thyristor Chips
Types
SKT-GSW 5,6Q1/. SKT-GSW Q1/. SKT-GSW 8,9Q1/. SKT-GSW 10,3Q1/. SKT-GSW 12,4Q1/. SKT-GSW 18,2QU/. SKT-TABL 5,6QU/. SKT-TABL QU/. SKT-TABL 8,9QU/. SKT-TABL 8,9QU/.ZG SKT-TABL 10,3QU/. SKT-TABL 10,3QU/. SKT-TABL 12,4QU/. SKT-TABL 12,4QU/. SKT-TABL SKT-TABL
Remarks:
ITAV ITSM VT(TO) (dv/dt)cr (di/dt)cr Tcase Rthjc Tvjmax Tvjmax Tvjmax Tvjmax °C/W V/µs A/µs 1000 0,25 0,95 1000 0,25 0,60 1000 1000 0,25 0,60 1250 1,65 1000 0,25 0,30 1750 1,65 1000 0,25 0,18 4000 1,80 0,85 1000 0,25 0,18 0,11 1050 1050 1250 1250 1750 1750 1,65 1,65 1,65 1,65 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 0,25 0,25 0,25 0,25 0,25 0,25 0,25 0,25
3750 1,75 7000 1,45
0,25 0,25
1000 e.g. SKT-GSW Q1/08 1200 1600 e.g. SKT-GSW Q1/12.16 e.g. SKT-GSW Q1/16 1600; glass passivated sandwich: Molybdenum Siliconchip/Molybdenum TABL glass passivated silicon chip, Metallisation: Bottom anode (solderable), cathode (solderable) VRRM, VDRM, VRRM, VDRM, Metallisation version (add suffix cath., bondable, request (dv/dt)cr Central gate (all others have "edge gate" Fig. Fig. Soldering temperature Metallization version "S": anode solderable contact (solderable area suffix request) Available selections VDRM, VRRM:
0896 0898
SEMIKRON
SEMIKRON
0896
0896
SEMIKRON
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