FDS6670AS N-Channel PowerTrench® SyncFETGeneral Description
|
|
|
Top Searches for this datasheet
FDS6670AS
FDS6670AS
N-Channel PowerTrench® SyncFETGeneral Description
FDS6670AS designed replace single SO-8 MOSFET Schottky diode synchronous DC:DC power supplies. This MOSFET designed maximize power conversion efficiency, providing gate charge. FDS6670AS RDS(ON) includes integrated Schottky diode using Fairchild's monolithic SyncFET technology.
Features
13.5 RDS(ON) max= RDS(ON) max= 11.5 Includes SyncFET Schottky body diode gate charge (27nC typical) High performance trench technology extremely RDS(ON) fast switching High power current handling capability
Applications
DC/DC converter side notebook
SO-8
Absolute Maximum Ratings
Symbol
VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
(Note
Units
13.5 +150
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
Package Marking Ordering Information
Device Marking FDS6670AS FDS6670AS Device FDS6670AS FDS6670AS_NL (Note Reel Size 13'' 13'' Tape width 12mm 12mm Quantity 2500 units 2500 units
FDS6670AS
©2005 Fairchild Semiconductor Corporation
FDS6670AS
Electrical Characteristics
Symbol
BVDSS BVDSS IDSS IGSS
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note
Test Conditions
Referenced 25°C
Units
Characteristics
±100 mV/°C
Characteristics
VGS(th) VGS(th) RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VGS, Referenced 25°C 13.5 11.2 VGS=10 =13.5A, TJ=125°C 13.5
-3.3
mV/°C
11.5 12.5
ID(on)
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note
1540
Switching Characteristics
td(on) td(off) td(on) td(off) Qg(TOT) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
RGEN RGEN 13.5
Total Gate Charge Vgs=10V Total Gate Charge Vgs=5V Gate-Source Charge Gate-Drain Charge
FDS6670AS
FDS6670AS
Electrical Characteristics
Symbol
Notes:
25°C unless otherwise noted
Parameter
Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge
Test Conditions
13.5A, diF/dt A/µs
Units
Drain-Source Diode Characteristics Maximum Ratings
(Note (Note
(Note
junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder
mounting surface drain pins. guaranteed design while determined user's board design. 50°C/W when mounted copper 105°C/W when mounted copper 125°C/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0% "SyncFET Schottky body diode characteristics" below. FDS6670AS_NL lead free product. FDS6670AS_NL marking will appear reel label.
FDS6670AS
FDS6670AS
Typical Characteristics
6.0V 4.5V 3.0V 3.5V 4.0V DRAIN CURRENT
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3.0V
3.5V
4.0V 4.5V 6.0V
2.5V VDS, DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.025
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 13.5A
RDS(ON), ON-RESISTANCE (OHM)
6.75A
0.02
0.015
0.01
JUNCTION TEMPERATURE
0.005 VGS, GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Gate-to-Source Voltage.
REVERSE DRAIN CURRENT
DRAIN CURRENT
125oC
0.01
125oC
25oC
VGS, GATE SOURCE VOLTAGE
0.001 VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6670AS
FDS6670AS
Typical Characteristics (continued)
VGS, GATE-SOURCE VOLTAGE
=13.5A
2400
1MHz
CAPACITANCE (pF)
1800
Ciss
1200
Coss
Crss
GATE CHARGE (nC)
VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
P(pk), PEAK TRANSIENT POWER
RDS(ON) LIMIT 100µs 10ms 100ms
Figure Capacitance Characteristics.
SINGLE PULSE 125°C/W 25°C
DRAIN CURRENT
SINGLE PULSE 125oC/W
0.01 0.01
VDS, DRAIN-SOURCE VOLTAGE
0.001
0.01
TIME (sec)
1000
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
0.05 0.02 0.01
RJA(t) r(t) °C/W P(pk)
SINGLE PULSE
0.01
RJA(t) Duty Cycle,
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6670AS
FDS6670AS
Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds Schottky diode parallel with PowerTrench MOSFET. This diode exhibits similar characteristics discrete external Schottky diode parallel with MOSFET. Figure shows reverse recovery characteristic FDS6670AS. Schottky barrier diodes exhibit significant leakage high temperature high reverse voltage. This will increase power device.
IDSS, REVERSE LEAKAGE CURRENT
0.01
125oC
0.001
100oC
CURRENT 0.4A/div
0.0001
25oC
0.00001 VDS, REVERSE VOLTAGE
Figure SyncFET body diode reverse leakage versus drain-source voltage temperature.
TIME 12.5ns/div
Figure FDS6670AS SyncFET body diode reverse recovery characteristic.
comparison purposes, Figure shows reverse recovery characteristics body diode equivalent size MOSFET produced without SyncFET (FDS6670A).
CURRENT 0.4A/div
TIME 12.5ns/div
Figure Non-SyncFET (FDS6670A) body diode reverse recovery characteristic.
FDS6670AS
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
ACExFAST Quiet Series
Across board. Around world.OPTOLOGIC OPTOPLANARThe Power Franchise PACMANProgrammable Active Droop
QFET QSQT OptoelectronicsQuiet SWITCHER SMART START
SPMStealthSuperFETSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTinyLogic UniFETVCX
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: critical component component life Life support devices systems devices support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.
Other recent searches
uPA2701GR - uPA2701GR uPA2701GR Datasheet
SBE818 - SBE818 SBE818 Datasheet
NMA2416-A2S - NMA2416-A2S NMA2416-A2S Datasheet
2SC4903 - 2SC4903 2SC4903 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
