FDS6680AS N-Channel PowerTrench® SyncFETFDS6680AS designed replace sin

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

FDS6680AS N-Channel PowerTrench® SyncFETFDS6680AS designed replace sin

Datasheet Thumbnail

Top Searches for this datasheet

FDS6680AS
FDS6680AS N-Channel PowerTrench® SyncFETFDS6680AS designed replace single SO-8 MOSFET Schottky diode synchronous DC:DC power supplies. This MOSFET designed maximize power conversion efficiency, providing gate charge. FDS6680AS RDS(ON) includes integrated Schottky diode using Fairchild's monolithic SyncFET technology. performance FDS6680AS low-side switch synchronous rectifier indistinguishable from performance FDS6680 parallel with Schottky diode.
Features
11.5 RDS(ON) max= 10.0 RDS(ON) max= 12.5 Includes SyncFET Schottky body diode gate charge (22nC typical) High performance trench technology extremely RDS(ON) fast switching High power current handling capability
Applications
DC/DC converter side notebooks
SO-8
Absolute Maximum Ratings
Symbol
VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
(Note
Units
11.5 +150
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
Package Marking Ordering Information
Device Marking FDS6680AS FDS6680AS
©2005 Fairchild Semiconductor Corporation
Device FDS6680AS FDS6680AS_NL (Note
Reel Size 13'' 13''
Tape width 12mm 12mm
Quantity 2500 units 2500 units
FDS6680AS B(X)
FDS6680AS
Electrical Characteristics
Symbol
BVDSS BVDSS IDSS IGSS
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note
Test Conditions
Referenced 25°C
Units
Characteristics
±100 mV/°C
Characteristics
VGS(th) VGS(th) RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VGS, Referenced 25°C 11.5 VGS=10 =11.5A, TJ=125°C 11.5
10.3 12.3
mV/°C
10.0 12.5 15.5
ID(on)
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note
1240
Switching Characteristics
td(on) td(off) td(on) td(off) Qg(TOT) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
RGEN RGEN 11.5
Total Gate Charge Vgs=10V Total Gate Charge Vgs=5V Gate-Source Charge Gate-Drain Charge
FDS6680AS B(X)
FDS6680AS
Electrical Characteristics
Symbol Parameter
25°C unless otherwise noted
Test Conditions Units
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge 11.5A,
(Note (Note
diF/dt A/µs
(Note
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
50°/W when mounted copper
105°/W when mounted copper
125°/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0% "SyncFET Schottky body diode characteristics" below. FDS6680AS_NL lead free product. FDS6680AS_NL marking will appear reel label.
FDS6680AS B(X)
FDS6680AS
Typical Characteristics
4.0V 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3.0V
DRAIN CURRENT
6.0V 4.5V 3.0V
3.5V 4.0V 4.5V 5.0V 6.0V 10.0V
2.5V
VDS, DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.05 RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
11.5A
0.04
0.03
0.02
0.01
JUNCTION TEMPERATURE
VGS, GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
REVERSE DRAIN CURRENT DRAIN CURRENT
Figure On-Resistance Variation with Gate-to-Source Voltage.
125oC 25oC 0.01 0.001
125oC -55oC
VGS, GATE SOURCE VOLTAGE
0.0001 VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6680AS B(X)
FDS6680AS
Typical Characteristics (continued)
VGS, GATE-SOURCE VOLTAGE =11.5A CAPACITANCE (pF)
1800 1MHz 1500
1200 Ciss
Coss
Crss
GATE CHARGE (nC)
VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
1000 P(pk), PEAK TRANSIENT POWER
Figure Capacitance Characteristics.
DRAIN CURRENT
RDS(ON) LIMIT 100µs
SINGLE PULSE 125°C/W 25°C
SINGLE PULSE 125oC/W 0.01
10ms 100ms
VDS, DRAIN-SOURCE VOLTAGE
0.01
TIME (sec)
1000
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
0.05 0.02
RJA(t) r(t) °C/W P(pk)
0.01 SINGLE PULSE
RJA(t) Duty Cycle,
0.01
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6680AS B(X)
FDS6680AS
Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds Schottky diode parallel with PowerTrench MOSFET. This diode exhibits similar characteristics discrete external Schottky diode parallel with MOSFET. Figure shows reverse recovery characteristic FDS6680AS. Schottky barrier diodes exhibit significant leakage high temperature high reverse voltage. This will increase power device.
IDSS, REVERSE LEAKAGE CURRENT
0.01
125oC
0.001
100oC
0.0001
3A/DIV
0.00001
25oC
0.000001 VDS, REVERSE VOLTAGE
10nS/DIV
Figure SyncFET body diode reverse leakage versus drain-source voltage temperature.
Figure FDS6680AS SyncFET body diode reverse recovery characteristic.
comparison purposes, Figure shows reverse recovery characteristics body diode equivalent size MOSFET produced without SyncFET (FDS6680).
Current: 3A/div
10nS/div
Figure Non-SyncFET (FDS6680) body diode reverse recovery characteristic.
FDS6680AS B(X)
FDS6680AS
Typical Characteristics
0.01
BVDSS
vary obtain required peak
Figure Unclamped Inductive Load Test Circuit
Drain Current Same type
Figure Unclamped Inductive Waveforms
10µF
QG(TOT)
Ig(REF Charge, (nC) Figure Gate Charge Test Circuit Figure Gate Charge Waveform RGEN VGSPulse Width
td(ON)
tOFF td(OFF
Duty Cycle 0.1%
Pulse Width
Figure Switching Time Test Circuit
Figure Switching Time Waveforms
FDS6680AS B(X)
FDS6680AS N-Channel PowerTrench® SyncFET
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
ACExFAST Quiet Series
Across board. Around world.OPTOLOGIC OPTOPLANARThe Power Franchise PACMANProgrammable Active Droop
QFET QSQT OptoelectronicsQuiet SWITCHER SMART START
SPMStealthSuperFETSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTinyLogic UniFETVCX
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: critical component component life Life support devices systems devices support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.
FDS6680AS Rev.
www.fairchildsemi.com

FDS6680AS N-Channel PowerTrench® SyncFETFDS6680AS designed replace sin

Top Searches for this datasheet

Other recent searches