FDS6682 N-Channel PowerTrench® MOSFET General Description

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FDS6682 N-Channel PowerTrench® MOSFET General Description

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FDS6682
FDS6682
N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET been designed specifically improve overall efficiency DC/DC converters using either synchronous conventional switching controllers. been optimized "low side" synchronous rectifier operation, providing extremely RDS(ON) small package.
Features
RDS(ON) RDS(ON)
gate charge typical) High performance trench technology extremely RDS(ON) High power current handling capability
Applications
DC/DC converter
SO-8
Absolute Maximum Ratings
Symbol
VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
(Note
Units
+150
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
Package Marking Ordering Information
Device Marking FDS6682 Device FDS6682 Reel Size 13'' Tape width 12mm Quantity 2500 units
©2004 Fairchild Semiconductor Corporation
FDS6682 D(W)
FDS6682
Electrical Characteristics
Symbol
BVDSS BVDSS IDSS IGSSF IGSSR
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note
Test Conditions
Units
Characteristics
Referenced 25°C -100 mV/°C
Characteristics
VGS(th) VGS(th) RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VGS,
-5.6
mV/°C
Referenced 25°C 12.5 12.5 TJ=125°C
11.5
ID(on)
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note
2310
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
RGEN
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
(Note
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
50°C/W when mounted 1in2 copper
105°C/W when mounted copper
125°C/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
FDS6682 D(W)
FDS6682
Typical Characteristics
3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 3.0V
DRAIN CURRENT
3.0V
3.5V 4.0V 4.5V 6.0V
VDS, DRAIN SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.016
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
7.0A
RDS(ON), ON-RESISTANCE (OHM)
0.014 0.012
125oC
0.01 0.008
25oC
0.006 0.004
JUNCTION TEMPERATURE
VGS, GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Gate-to-Source Voltage.
DRAIN CURRENT
125oC
REVERSE DRAIN CURRENT
-55oC
25oC
125oC
0.01 0.001 0.0001
25oC -55oC
VGS, GATE SOURCE VOLTAGE
VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6682 D(W)
FDS6682
Typical Characteristics
VGS, GATE-SOURCE VOLTAGE CAPACITANCE (pF)
4000 3000 CISS 2000 COSS 1000
CRSS GATE CHARGE (nC) VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
P(pk), PEAK TRANSIENT POWER 100µs DRAIN CURRENT RDS(ON) LIMIT SINGLE PULSE 125oC/W 25oC 0.01 0.01 10ms 100ms
Figure Capacitance Characteristics.
SINGLE PULSE 125°C/W 25°C
0.001
0.01
VDS, DRAIN-SOURCE VOLTAGE
TIME (sec)
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
RJA(t) r(t) P(pk)
SINGLE PULSE
0.05 0.02 0.01
0.01
RJA(t) Duty Cycle,
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6682 D(W)
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
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Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

FDS6682 N-Channel PowerTrench® MOSFET General Description

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