The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.    


Datasheet Search Engine   
 
Part # or Description: • 5V RS232 Driver • 2SC5066* • "Real Time Clock" • "USB connector" • "blue led" 5mm • 10 watt zener diode • 2N3055* motorola
 
Search Tip: Try entering the part number only. Include a wildcard (eg. lm317* or 1n4148*)

 

 

FDS6688 N-Channel PowerTrench® MOSFET General Description


Datasheet Thumbnail

  

Download PDF



Top Searches for this datasheet



FDS6688
FDS6688
N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET been designed specifically improve overall efficiency DC/DC converters using either synchronous conventional switching controllers. been optimized "low side" synchronous rectifier operation, providing extremely RDS(ON) small package.
Features
RDS(ON) RDS(ON)
Ultra-low gate charge typical) High performance trench technology extremely RDS(ON) High power current handling capability
Applications
DC/DC converter
SO-8
SO-8
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
Parameter
Ratings
(Note
Units
+175
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note (Note
°C/W °C/W °C/W
Package Marking Ordering Information
Device Marking FDS6688 Device FDS6688 Reel Size 13'' Tape width 12mm Quantity 2500 units
©2004 Fairchild Semiconductor Corporation
FDS6688 D(W)
FDS6688
Electrical Characteristics
Symbol
BVDSS BVDSS IDSS IGSS
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note
Test Conditions
Units
Characteristics
Referenced 25°C ±100 mV/°C
Characteristics
VGS(th) VGS(th) RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VGS, Referenced 25°C TJ=125°C
mV/°C
ID(on)
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note
3888
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
RGEN
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward (Note Voltage Diode Reverse Recovery Time diF/dt A/µs Diode Reverse Recovery Charge
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
50°C/W when mounted 1in2 copper
105°C/W when mounted copper
125°C/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
FDS6688 D(W)
FDS6688
Typical Characteristics
5.0V
DRAIN CURRENT
4.5V 3.5V 3.0V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3.0V
3.5V 4.0V 4.5V 6.0V
0.25 0.75 VDS, DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.014 RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
0.011
125oC
0.008
0.005
25oC
0.002
JUNCTION TEMPERATURE
VGS, GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
REVERSE DRAIN CURRENT
Figure On-Resistance Variation with Gate-to-Source Voltage.
DRAIN CURRENT
0.01
125oC
25oC
=125oC
-55oC
0.001
25oC -55oC
VGS, GATE SOURCE VOLTAGE
0.0001 VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6688 D(W)
FDS6688
Typical Characteristics
VGS, GATE-SOURCE VOLTAGE
6000
CAPACITANCE (pF) 5000
1MHz CISS
4000 3000 2000
COSS
1000
CRSS
GATE CHARGE (nC)
VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
RDS(ON) LIMIT DRAIN CURRENT 10ms 100ms SINGLE PULSE 125oC/W 25oC 0.01 0.01 100µs
P(pk), PEAK TRANSIENT POWER
Figure Capacitance Characteristics.
SINGLE PULSE 125°C/W 25°C
0.001
0.01
TIME (sec)
1000
VDS, DRAIN-SOURCE VOLTAGE
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
r(t) °C/W
0.05 0.02
P(pk) Duty Cycle,
0.01
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6688 D(W)
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
ACExFACT Quiet SeriesActiveArrayFAST board. Around world.The Power FranchiseProgrammable Active DroopDISCLAIMER
OPTOPLANARPACMAN
POPPower247PowerTrench QFET QSQT OptoelectronicsQuiet SWITCHER SMART STARTSPMStealth
SuperFETSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTinyLogic VCX
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: critical component component life Life support devices systems devices support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

Other recent searches


TR-1749C - TR-1749C   TR-1749C Datasheet
TIP120 - TIP120   TIP120 Datasheet
KSK-1A69-100160 - KSK-1A69-100160   KSK-1A69-100160 Datasheet
AVR042 - AVR042   AVR042 Datasheet
2SK4206G - 2SK4206G   2SK4206G Datasheet

 

Privacy Policy | Disclaimer
© 2012 Datasheet Archive