FDS6688S N-Channel PowerTrench SyncFETGeneral Description FD
|
|
|
Top Searches for this datasheet
FDS6688S
FDS6688S
N-Channel PowerTrench SyncFETGeneral Description
FDS6688S designed replace single SO-8 MOSFET Schottky diode synchronous DC:DC power supplies. This MOSFET designed maximize power conversion efficiency, providing RDS(ON) gate charge. FDS6688S includes integrated Schottky diode using Fairchild's monolithic SyncFET technology.
Features
RDS(ON) RDS(ON) Includes SyncFET Schottky body diode High performance trench technology extremely RDS(ON) fast switching High power current handling capability
Applications
DC/DC converter Motor drives
SO-8
Absolute Maximum Ratings
Symbol
VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
(Note
Units
+125
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W
Package Marking Ordering Information
Device Marking FDS6688S Device FDS6688S Reel Size 13'' Tape width 12mm Quantity 2500 units
2004 Fairchild Semiconductor Corporation
FDS6688S
FDS6688S
Electrical Characteristics
Symbol
BVDSS BVDSS IDSS IGSS VGS(th) VGS(th) RDS(on)
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
Test Conditions
Units
mV/°C
Characteristics
Referenced 25°C VGS,
±100
Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance mV/°C Referenced 25°C 14.5 VGS=10 TJ=125°C
Ciss Coss Crss td(on) td(off) Qg(TOT)
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note
3290
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
RGEN
Total Gate Charge VGS=10V Total Gate Charge VGS=5V Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Current Diode Reverse Recovery Charge
Drain-Source Diode Characteristics Maximum Ratings
(Note
diF/dt A/µs
(Note
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
50°/W when mounted copper
105°/W when mounted copper
125°/W when mounted minimum pad.
"SyncFET Schottky body diode characteristics" below Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
FDS6688S
FDS6688S
Typical Characteristics
3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
2.5V
DRAIN CURRENT
4.5V
3.5V
2.5V
3.0V 3.5V 4.0V
4.5V
6.0V
0.25 0.75 VDS, DRAIN-SOURCE VOLTAGE
2.0V
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.016
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
RDS(ON), ON-RESISTANCE (OHM)
16.0A =10V
8.0A
0.014 0.012 0.01 0.008 0.006
125oC
25oC
JUNCTION TEMPERATURE
0.004 VGS, GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Gate-to-Source Voltage.
DRAIN CURRENT
REVERSE DRAIN CURRENT
125oC 25oC
125oC
25oC
0.01
VGS, GATE SOURCE VOLTAGE
0.001 VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6688S
FDS6688S
Typical Characteristics (continued)
5000 16.0A 4000 1MHz
VGS, GATE-SOURCE VOLTAGE
CAPACITANCE (pF)
3000
Ciss
2000 Coss 1000 Crss
GATE CHARGE (nC)
VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
100us 10ms 100ms
P(pk), PEAK TRANSIENT POWER
Figure Capacitance Characteristics.
RDS(ON) LIMIT
DRAIN CURRENT
SINGLE PULSE 125°C/W 25°C
SINGLE PULSE 25oC
0.01 0.01
VDS, DRAIN-SOURCE VOLTAGE
0.001
0.01
TIME (sec)
1000
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
RJC(t) r(t) °C/W
0.05 0.02
P(pk
0.01
0.01
RJC(t) Duty Cycle,
SINGLE PULSE
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6688S
FDS6688S
Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds Schottky diode parallel with PowerTrench MOSFET. This diode exhibits similar characteristics discrete external Schottky diode parallel with MOSFET. Figure shows reverse recovery characteristic FDS6688S. Schottky barrier diodes exhibit significant leakage high temperature high reverse voltage. This will increase power device.
IDSS, REVERSE LEAKAGE CURRENT
125oC
0.01
100oC
0.001
CURRENT 0.8A/div
0.0001
25oC
0.00001 VDS, REVERSE VOLTAGE
TIME 12.5ns/div
Figure SyncFET body diode reverse leakage versus drain-source voltage temperature.
Figure FDS6688S SyncFET body diode reverse recovery characteristic.
comparison purposes, Figure shows reverse recovery characteristics body diode equivalent size MOSFET produced without SyncFET (FDS6688).
CURRENT 0.8A/div
TIME 12.5ns/div
Figure Non-SyncFET (FDS6688) body diode reverse recovery characteristic.
FDS6688S
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
ACExFACT Quiet SeriesActiveArrayFAST board. Around world.The Power Franchise Programmable Active DroopDISCLAIMER
OPTOPLANARPACMAN
QFET QSQT OptoelectronicsQuiet SWITCHER SMART STARTSPM
StealthSuperFETSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTinyLogic VCX
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: critical component component life Life support devices systems devices support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.
Other recent searches
SRM-3D - SRM-3D SRM-3D Datasheet
LX1970 - LX1970 LX1970 Datasheet
LT3587 - LT3587 LT3587 Datasheet
LT3587EUD - LT3587EUD LT3587EUD Datasheet
IXGP30N60B2 - IXGP30N60B2 IXGP30N60B2 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
