Gauge Conservative repeatable measurement available charge rechar
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bq2010
Gauge
Conservative repeatable measurement available charge rechargeable batteries Designed battery pack integration
General Description
bq2010 Gauge intended battery-pack in-system installation maintain accurate record battery's available charge. monitors voltage drop across sense resistor connected series between negative battery terminal ground determine charge discharge activity battery. NiMH NiCd battery self-discharge estimated based internal timer temperature sensor. Compensations battery temperature rate charge discharge applied charge, discharge, self-discharge calculations provide available charge information across wide range operating conditions. Battery capacity automatically recalibrated, "learned," course discharge cycle from full empty. Nominal available charge directly indicated using five- six-segment display. These segments used indicate graphically nominal available charge.
bq2010 supports simple single-line bidirectional serial link external processor (common ground). bq2010 outputs battery information response external commands over serial link. bq2010 operate directly from cells. With output external transistor, simple, inexpensive regulator built provide across greater number cells. Internal registers include available charge, temperature, capacity, battery battery status, programming settings. support subassembly testing, outputs also controlled. external processor also overwrite some bq2010 gauge data registers.
120µA typical standby current Small size enables implementations little square inch
Integrate within system stand-alone device
Display capacity singlewire serial communication port direct drive LEDs
Measurements compensated current temperature Self-discharge compensation using internal temperature sensor Accurate measurements across wide range current 500:1) 16-pin narrow SOIC
Connections
Names
LCOM common output EMPTY DISP Voltage reference output connect Serial communications input/output Empty battery indicator output Battery sense input Display control input Sense resistor input 3.0-6.5V System ground SEG1/PROG1 segment program input SEG2/PROG2 segment program input SEG3/PROG3 segment program input SEG4/PROG4 segment program input SEG5/PROG5 segment program input SEG6/PROG6 segment program input
LCOM SEG1/PROG1 SEG2/PROG2 SEG3/PROG3 SEG4/PROG4 SEG5/PROG5 SEG6/PROG6
EMPTY DISP
16-Pin Narrow SOIC
PN201001.eps
4/95
bq2010
Descriptions
LCOM common output Open-drain output switches source current LEDs. switch during initialization allow reading soft pull-up pull-down program resistors. LCOM also high impedance when display off. SEG1- SEG6 display segment outputs (dual function with PROG1-PROG6) Each output activate sink current sourced from LCOM. PROG1- PROG2 Programmed full count selection inputs (dual function with SEG1-SEG2) These three-level input pins define programmed full count (PFC) thresholds described Table PROG3- PROG4 gauge rate selection inputs (dual function with SEG3-SEG4) These three-level input pins define scale factor described Table PROG5 Self-discharge rate selection (dual function with SEG5) This three-level input defines selfdischarge compensation rate shown Table PROG6 Display mode selection (dual function with SEG6) This three-level defines display operation shown Table connect EMPTY DISP Sense resistor input voltage drop (VSR) across sense resistor monitored integrated over time interpret charge discharge activity. input tied high side sense resistor. indicates discharge, indicates charge. effective voltage drop, VSRO, seen bq2010 (see Table Display control input DISP high disables display. DISP tied allows PROGX connect directly instead through pull-up pull-down resistor. DISP floating allows display active during discharge charge registers update rate equivalent |VSRO| 4mV. DISP activates display. Table Secondary battery input This input monitors single-cell voltage potential through high-impedance resistive divider network end-of-discharge voltage (EDV) thresholds, maximum charge voltage (MCV), battery removed. Battery empty output This open-drain output becomes high-impedance detection valid end-of-discharge voltage (VEDVF) following next application valid charge. Serial This open-drain bidirectional pin. Voltage reference output regulator provides voltage reference output optional micro-regulator. Supply voltage input Ground
bq2010 Functional Description
General Operation
bq2010 determines battery capacity monitoring amount charge input removed from rechargeable battery. bq2010 measures discharge charge currents, estimates self-discharge, monitors battery low-battery voltage thresholds, compensates temperature charge/discharge rates. charge measurement derives from monitoring voltage across small-value series sense resistor between negative battery terminal ground. available battery charge determined monitoring this voltage over time correcting measurement environmental operating conditions. Figure shows typical battery pack application bq2010 using display capability chargestate indicator. bq2010 configured display capacity either relative absolute display mode. relative display mode uses last measured discharge capacity battery battery "full" reference. absolute display mode uses programmed full count (PFC) full reference, forcing each segment display represent fixed amount charge. push-button display feature available momentarily enabling display. bq2010 monitors charge discharge currents voltage across sense resistor (see Figure filter between negative battery terminal required rate change battery current great.
bq2010 Gauge
ZVNL110A
LCOM SEG1/PROG1 SEG2/PROG2 SEG3/PROG3 SEG4/PROG4 SEG5/PROG5 SEG6/PROG6
0.1µF
DISP
EMPTY
Indicates optional. Directly connect across cells 5.6V nominal) with resistor Zener diode limit voltage during charge. Otherwise, needed regulation cells. value depends number cells. Programming resistors max.) ESD-protection diodes shown. required, application-specific.
Charger Load
FG201001.eps
Figure Battery Pack Application Diagram-LED Display
bq2010
Voltage Thresholds
conjunction with monitoring charge/discharge currents, bq2010 monitors single-cell battery potential through pin. single-cell voltage potential determined through resistor/divider network according following equation: where number cells, connected positive battery terminal, connected negative battery terminal. single-cell battery voltage monitored end-of-discharge voltage (EDV) maximum cell voltage (MCV). threshold levels used determine when battery reached "empty" state, threshold used fault detection during charging. thresholds bq2010 fixed VEDV1 (early warning) 1.05V VEDVF (empty) 0.95V below either thresholds, associated flag latched remains latched, independent until next valid charge. monitoring disabled under certain conditions described next paragraph. During discharge charge, bq2010 monitors various thresholds. These thresholds used compensate charge discharge rates. Refer count compensation section details. monitoring disabled -250mV typical resumes second after -250mV. 20°C 30°C 30°C 40°C 40°C 50°C 50°C 60°C 60°C 70°C 70°C 80°C 80°C charge display translation. temperature range available over serial port 10°C increments shown below:
TMPGG (hex)
Temperature Range -30°C -30°C -20°C -20°C -10°C -10°C 10°C 10°C 20°C
EMPTY Output
EMPTY output switches high impedance when VEDVF remains latched until valid charge occurs. bq2010 also monitors relative VMCV, 2.25V. falling from above VMCV resets device.
Layout Considerations
bq2010 measures voltage differential between pins. (the offset voltage pin) greatly affected board layout. optimal results, board layout should follow strict rule single-point ground return. Sharing high-current ground with small signal ground causes undesirable noise small signal nodes. Additionally:
Reset
bq2010 recognizes valid battery whenever greater than 0.1V typical. rising from below 0.25V falling from above 2.25V resets device. Reset also accomplished with command over serial port described Reset Register section.
Temperature
capacitors VCC) should placed close possible pins, respectively, their paths should short possible. high-quality ceramic capacitor 0.1µf recommended VCC. sense resistor capacitor should placed close possible pin. sense resistor (RSNS) should close possible bq2010.
bq2010 internally determines temperature 10°C steps centered from -35°C +85°C. temperature steps used adapt charge discharge rate compensations, self-discharge counting, available
bq2010
Gauge Operation
operational overview diagram Figure illustrates operation bq2010. bq2010 accumulates measure charge discharge currents, well estimation self-discharge. Charge discharge currents temperature rate compensated, whereas self-discharge only temperature compensated. main counter, Nominal Available Charge (NAC), represents available battery capacity given time. Battery charging increments register, while battery discharging self-discharge decrement register increment (Discharge Count Register). Discharge Count Register (DCR) used update Last Measured Discharge (LMD) register only complete battery discharge from full empty occurs without partial battery charges. Therefore, bq2010 adapts capacity determination based actual conditions discharge. battery's initial capacity equal Programmed Full Count (PFC) shown Table Until updated, counts beyond this threshold during subsequent charges. This approach allows gauge charger-independent compatible with type charge regime. Last Measured Discharge (LMD) learned battery capacity: last measured discharge capacity battery. initialization (application battery replacement), PFC. During subsequent discharges, updated with latest measured capacity Discharge Count Register (DCR) representing discharge from full below EDV1. qualified discharge necessary capacity transfer from register. also serves 100% reference threshold used relative display mode. Programmed Full Count (PFC) initial battery capacity: initial gauge rate values programmed using PROG1-PROG4. also provides 100% reference absolute display mode. bq2010 configured given application selecting value from Table correct determined multiplying rated battery capacity sense resistor value: Battery capacity (mAh) sense resistor (mVh) Selecting slightly less than rated capacity absolute mode provides capacity above full reference much battery's life.
Inputs
Charge Current Rate Temperature Compensation
Discharge Current Rate Temperature Compensation
Self-Discharge Timer
Temperature Compensation
Main Counters Capacity Reference (LMD)
Nominal Available Charge (NAC)
Last Measured Discharged (LMD)
Discharge Count Qualified Register (DCR) Transfer
Temperature Translation
Temperature Step, Other Data
Outputs
Chip-Controlled Available Charge Display
Serial Port
FG201002.eps
Figure Operational Overview
bq2010
Example: Selecting Value Given: Sense resistor Number cells Capacity 2200mAh, NiCd battery Current range 50mA Absolute display mode Serial port only Self-discharge Voltage drop over sense resistor 200mV Therefore: 2200mAh 220mVh Select: 33792 counts 211mVh PROG1 float PROG2 float PROG3 float PROG4 PROG5 float PROG6 float initial full battery capacity 211mVh (2110mAh) until bq2010 "learns" capacity with qualified discharge from full EDV1.
Table bq2010 Programming
Connection Note: PROG5 Self-Discharge Rate Disabled
PROG6 Display Mode Absolute reset Absolute reset Relative reset
DISP Display State disabled LED-enabled discharge charge when equivalent |VSRO|
PROG5 PROG6 states independent.
Table bq2010 Programmed Full Count Selections
Programmed Full Count (PFC) 49152 45056 40960 36864 33792 30720 27648 25600 22528
PROGx
PROG4 PROG3 Scale 1/80
PROG4 Units mVh/ count
PROG3 PROG3 PROG3 PROG3 PROG3 Scale 1/160 Scale 1/320 96.0 86.4 80.0 70.4 22.5 Scale 1/640 76.8 70.4 64.0 57.6 53.0 48.0 43.2 40.0 35.2 11.25 Scale 1/1280 38.4 35.2 32.0 28.8 26.4 24.0 21.6 20.0 17.6 Scale 1/2560 19.2 17.6 16.0 14.4 13.2 12.0 10.8 10.0
equivalent counts/sec. (nom.)
bq2010
Nominal Available Charge (NAC): counts during charge maximum value down during discharge self-discharge reset initialization (PROG6 low) first valid charge following discharge EDV1. initialization PROG6 high. prevent overstatement charge during periods overcharge, stops incrementing when LMD. Discharge Count Register (DCR): counts during discharge independent could continue increasing after decremented Prior (empty battery), both discharge self-discharge increment DCR. After only discharge increments DCR. resets when LMD. does roll over stops counting when reaches ffffh. value becomes value first charge after valid discharge VEDV1 valid charge initiations (charges greater than counts, where VSRO VSRQ) occurred during period between EDV1 detected. self-discharge count more than 4096 counts PFC, specific percentage threshold determined PFC). temperature when EDV1 level reached during discharge. valid discharge flag (VDQ) indicates whether present discharge valid update.
Discharge Counting
discharge counts where VSRO VSRD cause register decrement increment. Exceeding fast discharge threshold (FDQ) rate equivalent VSRO -4mV activates display, enabled. display becomes inactive after VSRO rises above -4mV. programmable threshold described Digital Magnitude Filter section. default value VSRD -300µV.
Self-Discharge Estimation
bq2010 continuously decrements increments self-discharge based time temperature. self-discharge count rate programmed nominal NAC, day, disabled selected PROG5. This rate battery whose temperature between 20°-30°C. register cannot decremented below
Count Compensations
bq2010 determines fast charge when updates rate counts/sec. Charge discharge activity compensated temperature charge/discharge rate before updating and/or DCR. Selfdischarge estimation compensated temperature before updating DCR.
Charge Compensation
charge efficiency compensation factors used trickle charge fast charge. Fast charge defined rate charge resulting counts/sec 0.15C 0.32C depending selections; Table compensation defaults fast charge factor until actual charge rate determined. Temperature adapts charge rate compensation factors over three ranges between nominal, warm, temperatures. compensation factors shown below.
Charge Counting
Charge activity detected based positive voltage input. charge activity detected, bq2010 increments rate proportional VSRO and, enabled, activates display rate equivalent VSRO 4mV. Charge actions increment after compensation charge rate temperature. bq2010 determines charge activity sustained continuous rate equivalent VSRO VSRQ. valid charge equates sustained charge activity greater than counts. Once valid charge detected, charge counting continues until VSRO (VSR VOS) falls below VSRQ. VSRQ programmable threshold described Digital Magnitude Filter section. default value VSRQ 375µV.
Charge Temperature <30°C 30-40°C 40°C
Trickle Charge Compensation 0.80 0.75 0.65
Fast Charge Compensation 0.95 0.90 0.80
Discharge Compensation
Corrections rate discharge made adjusting internal discharge compensation factor. discharge compensation factor based namically measured VSR.
bq2010
compensation factors during discharge are: Discharge Compensation Factor 1.00 1.05
Digital Magnitude Filter
bq2010 programmable digital filter eliminate charge discharge counting below threshold. default setting -0.30mV +0.38mV VSRQ. proper digital filter setting calculated using following equation. Table shows typical digital filter settings. VSRD (mV)
Approximate Threshold -150 -150
Efficiency 100%
Temperature compensation during discharge also takes place. lower temperatures, compensation factor increases 0.05 each 10°C temperature step below 10°C. Comp. factor (0.05 Where Number 10°C steps below 10°C -150mV example: 10°C Nominal compensation, 10°C: (i.e., becomes 1.05) -10°C 0°C: (i.e., becomes 1.10) -20°C -10°C: (i.e., becomes 1.15) -20°C -30°C: (i.e., becomes 1.20)
VSRQ (mV) -1.25 VSRD
Table Typical Digital Filter Settings
(default) Hex. VSRD (mV) -0.60 -0.45 -0.30 -0.26 -0.23 VSRQ (mV) 0.75 0.56 0.38 0.32 0.28
Error Summary
Capacity Inaccurate
susceptible error initialization updates occur. initialization, value includes error between programmed full capacity actual capacity. This error present until valid discharge occurs updated (see description page other cause error battery wear-out. battery ages, measured capacity must adjusted account changes actual battery capacity. Capacity Inaccurate counter (CPI) maintained incremented each time valid charge occurs (qualified NAC; register description) reset whenever updated from DCR. counter does wrap around stops counting 255. capacity inaccurate flag (CI) been updated following valid charges.
Self-Discharge Compensation
self-discharge compensation programmed nominal rate NAC, day, disabled. This rate battery within 20-30°C temperature range (TMPGG 6x). This rate varies across ranges from <10°C >70°C, doubling with each higher temperature step (10°C). Table
Table Self-Discharge Compensation
Typical Rate Temperature Range 10°C 10-20°C 20-30°C 30-40°C 40-50°C 50-60°C 60-70°C 70°C PROG5
PROG5
Current-Sensing Error
Table illustrates current-sensing error function VSR. digital filter eliminates charge discharge counts register when VSRO (VSR VOS) between VSRQ VSRD.
23.5 11.8 5.88 2.94 1.47
Communicating With bq2010
bq2010 includes simple single-pin plus return) serial data interface. host processor uses interface access various bq2010 registers. Battery characteristics easily monitored adding single contact battery pack. open-drain
bq2010
Table bq2010 Current-Sensing Errors
Symbol Parameter Offset referred Integrated non-linearity error Integrated nonrepeatability error Typical Maximum Units DISP VCC. 0.1% above below 25°C volt above below 4.25V. Measurement repeatability given similar operating conditions. Notes
bq2010 should pulled host system left floating serial interface used. interface uses command-based protocol, where host processor sends command byte bq2010. command directs bq2010 either store next eight bits data received register specified command byte output eight bits data specified command byte. communication protocol asynchronous return-toone. Command data bytes consist stream eight bits that have maximum transmission rate bits/sec. least-significant command data byte transmitted first. protocol simple enough that implemented most host processors using either polled interrupt processing. Data input from bq2010 sampled using pulse-width capture timers available some microcontrollers. Communication normally initiated host processor sending BREAK command bq2010. BREAK detected when driven logic-low state time, greater. should then returned normal ready-high logic state time, tBR. bq2010 ready receive command from host processor. return-to-one data frame consists three distinct sections. first section used start transmission either host bq2010 taking logic-low state period, tSTRH,B. next section actual data transmission, where data should valid period, tDSU, after negative edge used start
communication. data should held period, tDV, allow host bq2010 sample data bit. final section used stop transmission returning logic-high state least period, tSSU, after negative edge used start communication. final logic-high state should held until period, tSV, allow time ensure that transmission stopped properly. timings data break communication given serial communication timing specification illustration sections. Communication with bq2010 always performed with least-significant being transmitted first. Figure shows example communication sequence read bq2010 register.
bq2010 Registers
bq2010 command status registers listed Table described below.
Command Register (CMDR)
write-only CMDR register accessed when eight valid command bits have been received bq2010. CMDR register contains fields:
Command address
command register used select whether received command read write function.
Received Host bq2010
Written Host bq2010 CMDR
Break
TD201001.eps
Figure Typical Communication with bq2010
bq2010
Table bq2010 Command Status Registers
Control Field Register Name Symbol CMDR FLGS1 Command register Primary status flags register Loc. (hex) Read/ Write Write Read 7(MSB) CHGS EDV1 0(LSB) EDVF
Temperature TMPGG gauge register Nominal available charge high byte register Nominal available charge byte register Battery identification register Last measured discharge register Secondary status flags register Program pull-down register Program pull-up register Capacity inaccurate count register Digital magnitude filter register Reset register used
Read
TMP3
TMP2
TMP1
TMP0
NACH
NACH7 NACH6 NACH5 NACH4 NACH3 NACH2 NACH1 NACH0
NACL
Read
NACL7 NACL6 NACL5 NACL4 NACL3 NACL2 NACL1 NACL0
BATID
BATID7 BATID6 BATID5 BATID4 BATID3 BATID2 BATID1 BATID0
LMD7
LMD6
LMD5
LMD4
LMD3
LMD2
LMD1
LMD0
FLGS2
Read
OVLD
Read
PPD6
PPD5
PPD4
PPD3
PPD2
PPD1
Read
PPU6
PPU5
PPU4
PPU3
PPU2
PPU1
Read
CPI7
CPI6
CPI5
CPI4
CPI3
CPI2
CPI1
CPI0
Note:
Write
DMF7
DMF6
DMF5
DMF4
DMF3
DMF2
DMF1
DMF0
bq2010
values are: CMDR Bits Where bq2010 outputs requested register contents specified address portion CMDR. following eight bits should written register specified address portion CMDR. FLGS1 Bits tected after EDV1 flag asserted. signifies that device been reset. values are:
Where Battery charged until discharged until EDV1 flag asserted dropping from above MCV, rising from below 0.1V, serial port initiated reset occurred
lower seven-bit field CMDR contains address portion register accessed. Attempts write invalid addresses ignored.
CMDR Bits (LSB)
battery removed flag (BRM) asserted whenever potential (relative VSS) rises above falls below 0.1V. flag asserted until condition causing removed. values are: FLGS1 Bits
Primary Status Flags Register (FLGS1)
read-only FLGS1 register (address=01h) contains primary bq2010 flags. charge status flag (CHGS) asserted when valid charge rate detected. Charge rate deemed valid when VSRO VSRQ. VSRO less than VSRQ discharge activity clears CHGS. CHGS values are: FLGS1 Bits CHGS
Where 0.1V 2.25V 2.25V
capacity inaccurate flag (CI) used warn user that battery been charged substantial number times since been updated. flag asserted 64th charge after last update when bq2010 reset. flag cleared after update. values are: FLGS1 Bits
Where CHGS Either discharge activity detected VSRO VSRQ VSRO VSRQ Where
battery replaced flag (BRP) asserted whenever potential (relative VSS), VSB, falls from above maximum cell voltage, (2.25V), rises above 0.1V. flag also when bq2010 reset (see register description). reset when either valid charge action increments equal LMD, valid charge action
When updated with valid full discharge After 64th valid charge action with updates bq2010 reset
bq2010
valid discharge flag (VDQ) asserted when bq2010 discharged from NAC=LMD. flag remains until either updated three actions that clear occurs:
EDVF values are: FLGS1 Bits EDVF
self-discharge count register (SDCR) exceeded maximum acceptable value (4096 counts) update. valid charge action sustained VSRO VSRQ least counts. EDV1 flag temperature below
Where EDVF Valid charge action detected, 0.95V 0.95V providing that OVLD=0 (see FLGS2 register description)
values are: FLGS1 Bits
Temperature Gauge Register (TMPGG)
read-only TMPGG register (address=02h) contains data fields. first field contains battery temperature. second field contains available charge from battery. TMPGG Temperature Bits
Where SDCR 4096, subsequent valid charge action detected, EDV1 asserted with temperature less than first discharge after
TMP3 TMP2
TMP1 TMP0
first end-of-discharge warning flag (EDV1) warns user that battery almost empty. first segment pin, SEG1, modulated rate display enabled once EDV1 asserted, which should warn user that loss battery power imminent. EDV1 flag latched until valid charge been detected. EDV1 values are:
bq2010 contains internal temperature sensor. temperature used charge discharge efficiency factors well adjust self-discharge coefficient. temperature register contents translated shown below. TMP3 TMP2 TMP1 TMP0 Temperature -30°C -30°C -20°C -20°C -10°C -10°C 10°C 10°C 20°C 20°C 30°C 30°C 40°C 40°C 50°C 50°C 60°C 60°C 70°C 70°C 80°C 80°C
FLGS1 Bits EDV1
Where EDV1 Valid charge action detected, 1.05V 1.05V providing that OVLD=0 (see FLGS2 register description)
final end-of-discharge warning flag (EDVF) used warn that battery power failure condition. segment drivers turned off. EDVF flag latched until valid charge been detected. EMPTY also forced high-impedance state assertion EDVF. host system pull EMPTY high, which used disable circuitry prevent deep-discharge battery.
bq2010
bq2010 calculates available charge function NAC, temperature, full reference, either PFC. results calculation available display port gauge field TMPGG register. register used give available capacity increments from TMPGG Gauge Bits battery from full empty. this bq2010 updates capacity battery. during bq2010 reset.
Secondary Status Flags Register (FLGS2)
read-only FLGS2 register (address=06h) contains secondary bq2010 flags. charge rate flag (CR) used denote fast charge regime. Fast charge assumed whenever charge action initiated. flag remains asserted charge rate does fall below counts/sec. values are: FLGS2 Bits
gauge display gauge portion TMPGG register adjusted cold temperature dependencies. piece-wise correction performed follows: Temperature -20°C -20°C Available Capacity Calculation "Full Reference" 0.75 "Full Reference" "Full Reference"
Where When charge rate falls below counts/sec When charge rate above counts/sec
adjustment between -20°C 10°C hysteresis.
Nominal Available Charge Registers (NACH/NACL)
read/write NACH high-byte register (address=03h) read-only NACL low-byte register (address=17h) main gauging register bq2010. registers incremented during charge actions decremented during discharge self-discharge actions. correction factors charge/discharge efficiency applied automatically NAC. reset, PROG6 low, NACH NACL cleared PROG6 high, NACH NACL When bq2010 detects valid charge, NACL resets Writing registers affects available charge counts and, therefore, affects bq2010 gauge operation. write registers value greater than LMD.
fast charge regime efficiency factors used when When trickle charge efficiency factors used. time change varies user-selectable count rates. discharge rate flags, DR2-0, bits 6-4. FLGS2 Bits
They used determine current discharge regime follows: -150mV -150mV
Battery Identification Register (BATID)
read/write BATID register (address=04h) available system determine type battery pack. BATID contents retained long greater than contents BATID have effect operation bq2010. There default setting this register.
overload flag (OVLD) asserted when discharge overload detected, -250mV. OVLD remains asserted long condition persists cleared seconds after -250mV. overload condition used stop sampling battery terminal characteristics end-of-discharge determination. Sampling reenabled secs after overload condition removed. FLGS2 Bits
Last Measured Discharge Register (LMD)
read/write register (address=05h) that bq2010 uses measured full reference. bq2010 adjusts based measured discharge capacity
OVLD
bq2010
DR2-0 OVLD based measurement voltage relative VSS. rate which this measurement made varies with device activity.
Digital Magnitude Filter (DMF)
read-write register (address 0ah) provides system with means change default settings digital magnitude filter. writing different values into this register, limits VSRD VSRQ adjusted. Note: Care should taken when writing this register. VSRD VSRQ below specified adversely affect accuracy bq2010. Refer Table recommended settings register.
Program Pull-Down Register (PPD)
read-only register (address=07h) contains some programming information bq2010. segment drivers, SEG1-6, have corresponding register location, PPD1-6. given location pull-down resistor been detected corresponding segment driver. example, SEG1 SEG4 have pull-down resistors, contents xx001001. PPD/PPU Bits
Reset Register (RST)
reset register (address=39h) provides means perform software-controlled reset device. writing register contents from 80h, bq2010 reset performed. Setting other than most-significant register allowed, results improper operation bq2010. Resetting bq2010 sets following:
PPU6 PPU5 PPU4 PPU3 PPU2 PPU1 PPD6 PPD5 PPD4 PPD3 PPD2 PPD1
Program Pull-Up Register (PPU)
CPI, VDQ, NACH, NACL
read-only register (address=08h) contains rest programming information bq2010. segment drivers, SEG1-6, have corresponding register location, PPU1-6. given location pullup resistor been detected corresponding segment driver. example, SEG3 SEG6 have pull-up resistors, contents xx100100.
Note: NACH when PROG6 Self-discharge disabled when PROG5
Display
bq2010 directly display capacity information using low-power LEDs. LEDs used, program pins should resistively tied program high program low, respectively. bq2010 displays battery charge state either absolute relative mode. relative mode, battery charge represented percentage LMD. Each segment represents LMD. sixth segment, SEG6, used. absolute mode, each segment represents fixed amount charge, based initial PFC. absolute mode, each segment represents PFC, with SEG6 representing "overfull" (charge above PFC). battery wears over time, possible below initial PFC. this case, LEDs turn absolute mode, representing reduction actual battery capacity. capacity display also adjusted present battery temperature. temperature adjustment reflects available capacity given temperature does affect register. temperature adjustments detailed TMPGG register description. When DISP tied VCC, SEG1-6 outputs inactive. When DISP left floating, display becomes active
Capacity Inaccurate Count Register (CPI)
read-only register (address=09h) used indicate number times battery been charged without update. Because capacity rechargeable battery varies with operating conditions, bq2010 adapts changing capacity over time. complete discharge from full (NAC=LMD) empty (EDV1=1) required perform update assuming there have been intervening valid charges, temperature greater than equal 0°C, self-discharge counter less than 4096 counts. register incremented every time valid charge detected. When 0.94 LMD, however, register increments first valid charge; does increment again valid charge until 0.94 LMD. This prevents continuous trickle charging from incrementing self-discharge decrements NAC. register increments without rolling over. When contents incremented capacity inaccurate flag, asserted FLGS1 register. register reset whenever update register performed, flag also cleared.
bq2010
whenever registers counting rate equivalent |VSRO| 4mV. When pulled low, segment outputs become active immediately. capacitor tied DISP allows display remain active short period time after activation push-button switch. segment outputs modulated banks three, with segments alternating with segments segment outputs modulated approximately 100Hz with each segment bank active period. SEG1 blinks rate whenever been detected below VEDV1 (EDV1 indicating lowbattery condition. below VEDVF (EDVF disables display output.
Microregulator
bq2010 operate directly from cells. facilitate power supply requirements bq2010, output provided regulate external lowthreshold n-FET. micropower source bq2010 inexpensively built using external resistor; Figure
Absolute Maximum Ratings
Symbol other pins Parameter Relative Relative Relative Relative Minimum -0.3 -0.3 -0.3 Maximum +7.0 +7.0 +8.5 Unit Current limited (see Figure Minimum series resistor should used protect case shorted battery (see bq2010 application note details). Commercial Notes
-0.3
+7.0
TOPR Note:
Operating temperature
Permanent device damage occur Absolute Maximum Ratings exceeded. Functional operation should limited Recommended Operating Conditions detailed this data sheet. Exposure conditions beyond operational limits extended periods time affect device reliability.
Voltage Thresholds TOPR; 6.5V)
Symbol VEDVF VEDV1 VSR1 VSRO VSRQ VSRD VMCV Note: Parameter Final empty warning First empty warning Discharge compensation threshold sense range Valid charge Valid discharge Maximum single-cell voltage Battery removed/replaced Minimum 0.93 1.03 -120 -300 2.20 2.20 Typical 0.95 1.05 -150 2.25 2.25 Maximum 0.97 1.07 -180 +2000 -300 2.30 0.25 2.30 Unit (see note) (see note) pulled pulled high Notes
Default value; value register. affected board layout. Proper layout guidelines should followed optimal performance. "LayoutConsiderations."
bq2010
Electrical Characteristics TOPR)
Symbol VREF RREF RSBmax IDISP ILCOM VOLSL VOLSH VOHLCL VOHLCH IOLS VIHDQ VILDQ RPROG RFLOAT Parameter Supply voltage Reference 25°C Reference -40°C +85°C Reference input impedance Normal operation Battery input input impedance DISP input leakage LCOM input leakage Internal pulldown Sense resistor input input impedance Logic input high Logic input Logic input SEGX output low, SEGX output low, high LCOM output high, LCOM output high, high PROG1-6 input high current PROG1-6 input current SEGX sink current Open-drain sink current Open-drain output input high input Soft pull-up pull-down resistor value (for programming) Float state external impedance Minimum -0.2 -0.3 float Typical 4.25 Maximum float 11.0 Unit discharge; charge -200mV PROG1-PROG6 PROG1-PROG6 PROG1-PROG6 IOLS 1.75mA SEG1-SEG6 6.5V, IOLS 11.0mA SEG1-SEG6 IOHLCOM -5.25mA 6.5V, IOHLCOM -33.0mA VPROG VCC/2 VPROG VCC/2 VOHLCH 0.6V VOLSH 0.4V 0.3V EMPTY 5mA, EMPTY PROG1-PROG6 PROG1-PROG6 VDISP DISP Notes excursion from 2.0V 3.0V initializes unit. IREF IREF VREF 3.0V, 4.25V, 6.5V,
IOHLCOM LCOM source current
bq2010
Serial Communication Timing Specification TOPR)
Symbol tCYCH tCYCB tSTRH tSTRB tDSU tSSU Note: Parameter Cycle time, host bq2010 Cycle time, bq2010 host Start hold, host bq2010 Start hold, bq2010 host Data setup Data hold Data valid Stop setup Stop hold Stop valid Break Break recovery Minimum 1.50 2.95 Typical Maximum 2.25 Unit Notes note
open-drain should pulled least host system proper operation. left floating serial interface used.
Serial Communication Timing Illustration
(R/W
(R/W
tSTRH tSTRB tDSU tSSU tCYCH, tCYCB,
(BREAK)
TD201002.eps
bq2010
16-Pin SOIC Narrow (SN)
16-Pin (SOIC Narrow)
Dimension Minimum 0.060 0.004 0.013 0.007 0.385 0.150 0.045 0.225 0.015 dimensions inches. Maximum 0.070 0.010 0.020 0.010 0.400 0.160 0.055 0.245 0.035
.004
bq2010
Data Sheet Revision History
Change Page Description monitoring Table PROG5 Self-discharge Capacity inaccurate Nominal available charge register Overload flag Nature Change Was: monitoring disabled -150mV; monitoring disabled -250mV Was: PROG5 Reserved; PROG5 Disable self-discharge Add: disabled selected PROG5 Correction: asserted 64th charge after last update when bq2010 reset NACL stops counting when NACH reaches zero -150mV -250mV
Was: Notes: Changes please refer 1995 Data Book. Change Apr. 1995 changes from Mar. 1994
Ordering Information
bq2010
Temperature Range:
blank Commercial +70°C)
Package Option:
16-pin narrow SOIC
Device:
bq2010 Gauge
PACKAGE OPTION ADDENDUM
www.ti.com
19-Jul-2005
PACKAGING INFORMATION
Orderable Device BQ2010SN-D107 BQ2010SN-D107TR BQ2010SN-D107TRG4
Status ACTIVE ACTIVE ACTIVE
Package Type SOIC SOIC SOIC
Package Drawing
Pins Package Plan Green (RoHS Sb/Br)
Lead/Ball Finish NIPDAU NIPDAU NIPDAU
Peak Temp Level-2-260C-1 YEAR Level-2-260C-1 YEAR Level-2-260C-1 YEAR
2500 Green (RoHS Sb/Br) 2500 Green (RoHS Sb/Br)
marketing status values defined follows: ACTIVE: Product device recommended designs. LIFEBUY: announced that device will discontinued, lifetime-buy period effect. NRND: recommended designs. Device production support existing customers, does recommend using this part design. PREVIEW: Device been announced production. Samples available. OBSOLETE: discontinued production device.
Plan planned eco-friendly classification: Pb-Free (RoHS) Green (RoHS Sb/Br) please check latest availability information additional product content details. TBD: Pb-Free/Green conversion plan been defined. Pb-Free (RoHS): TI's terms "Lead-Free" "Pb-Free" mean semiconductor products that compatible with current RoHS requirements substances, including requirement that lead exceed 0.1% weight homogeneous materials. Where designed soldered high temperatures, Pb-Free products suitable specified lead-free processes. Green (RoHS Sb/Br): defines "Green" mean Pb-Free (RoHS compatible), free Bromine (Br) Antimony (Sb) based flame retardants exceed 0.1% weight homogeneous material)
MSL, Peak Temp. Moisture Sensitivity Level rating according JEDEC industry standard classifications, peak solder temperature. Important Information Disclaimer:The information provided this page represents TI's knowledge belief date that provided. bases knowledge belief information provided third parties, makes representation warranty accuracy such information. Efforts underway better integrate information from third parties. taken continues take reasonable steps provide representative accurate information have conducted destructive testing chemical analysis incoming materials chemicals. suppliers consider certain information proprietary, thus numbers other limited information available release. event shall TI's liability arising such information exceed total purchase price part(s) issue this document sold Customer annual basis.
Addendum-Page
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