NPN/PNP Transistor Arrays CA3096C, CA3096, CA3096A general purpos
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CA3096, CA3096A, CA3096C
NPN/PNP Transistor Arrays
CA3096C, CA3096, CA3096A general purpose high voltage silicon transistor arrays. Each array consists five independent transistors (two three types) common substrate, which separate connection. Independent connections each transistor permit maximum flexibility circuit design. Types CA3096A, CA3096, CA3096C identical, except that CA3096A specifications include parameter matching greater stringency ICBO ICEO VCE(SAT). CA3096C relaxed version CA3096.
December 1997
Applications
Five-Independent Transistors Three Differential Amplifiers Amplifiers Sense Amplifiers Level Shifters Timers Lamp Relay Drivers Thyristor Firing Circuits Temperature Compensated Amplifiers Operational Amplifiers
CA3096, CA3096A, CA3096C Essential Differences
CHARACTERISTIC V(BR)CEO (Min) CA3096A CA3096 CA3096C
Ordering Information
PART NUMBER (BRAND) CA3096AE CA3096AM (3096A) CA3096AM96 (3096A) CA3096CE CA3096E CA3096M (3096) CA3096M96 (3096) TEMP. RANGE (oC) PACKAGE PDIP SOIC SOIC Tape Reel PDIP PDIP SOIC SOIC Tape Reel PKG. E16.3 M16.15 M16.15 E16.3 E16.3 M16.15 M16.15
V(BR)CBO (Min) 100µA ICBO (nA) (Max)
150-500 20-200
150-500 20-200
100-670 15-200
40-250
40-250
30-300
Pinout
CA3096, CA3096A, CA3096C (PDIP, SOIC) VIEW
SUBSTRATE
-100
-100
ICEO (nA) (Max) (Max) |VIO| (mV) (Max) |IIO| (µA) (Max) 0.25 -100 1000 -1000 1000 -1000
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper Handling Procedures. Copyright
File Number
Harris Corporation 1997
595.4
CA3096, CA3096A, CA3096C
Absolute Maximum Ratings
Collector-to-Emitter Voltage, VCEO CA3096, CA3096A CA3096C Collector-to-Base Voltage, VCBO CA3096, CA3096A CA3096C Collector-to-Substrate Voltage, VCIO (Note CA3096, CA3096A CA3096C Emitter-to-Substrate Voltage, VEIO CA3096, CA3096A CA3096C Emitter-to-Base Voltage, VEBO CA3096, CA3096A CA3096C Collector Current, (All Types) 50mA -40V -24V -40V -24V -40V -24V -40V -24V -10mA
Operating Conditions
Temperature Range .-55oC 125oC
Thermal Information
Thermal Resistance (Typical, Note (oC/W) PDIP Package SOIC Package Maximum Power Dissipation (Each Transistor, Note 200mW Maximum Junction Temperature (Plastic Package) 150oC Maximum Storage Temperature Range .-65oC 150oC Maximum Lead Temperature (Soldering 10s) 300oC (SOIC Lead Tips Only)
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTES: collector each transistor CA3096 isolated from substrate integral diode. substrate (Terminal must connected most negative point external circuit maintain isolation between transistors provide normal transistor action. measured with component mounted evaluation board free air. Care must taken avoid exceeding maximum junction temperature. total power dissipation (all transistors) thermal resistances calculate junction temperature.
Electrical Specifications
Equipment Design, 25oC CA3096 CA3096A CA3096C UNITS
PARAMETER
TEST CONDITIONS
CHARACTERISTICS EACH TRANSISTOR ICBO ICEO V(BR)CEO V(BR)CBO V(BR)CIO V(BR)EBO (Note (Note |VBE/T| (Note 10V, 10V, 1mA, 10µA, 10µA, 10µA, 10µA 10mA, 1mA, 1mA, 0.001 0.006 0.24 0.69 1000 0.78 0.001 0.006 0.24 0.69 0.78 0.001 0.006 0.24 0.69 1000 0.78 mV/oC
CHARACTERISTICS EACH TRANSISTOR ICBO -10V, -0.06 -100 -0.006 -0.06 -100
CA3096, CA3096A, CA3096C
Electrical Specifications
Equipment Design, 25oC (Continued) CA3096 -0.5 -0.12 -100 -0.16 -0.6 -1000 -0.4 -0.7 -0.5 CA3096A -0.12 -100 -0.16 -0.6 -100 -0.4 -0.7 -0.5 CA3096C -0.12 -0.16 -0.6 -1000 -0.4 -0.7 mV/oC UNITS
PARAMETER ICEO V(BR)CEO V(BR)CBO V(BR)EBO V(BR)ElO (Note (Note
TEST CONDITIONS -10V, -100µA, -10µA, -10µA, 10µA, -1mA, -100µA -100µA, -100µA, -1mA,
|VBE/T| (Note ICBO ICEO
-100µA,
Collector-Cutoff Current Collector-Cutoff Current
Emitter-to-Base Zener Voltage Collector-to-Emitter Saturation Voltage Base-to-Emitter Voltage Forward-Current Transfer Ratio
V(BR)CEO Collector-to-Emitter Breakdown Voltage V(BR)CBO Collector-to-Base Breakdown Voltage V(BR)CIO Collector-to-Substrate Breakdown Voltage
V(BR)EBO Emitter-to-Base Breakdown Voltage NOTE: Actual forcing current emitter this test.
|VBE/T| Magnitude Temperature Coefficient: (for each transistor)
Electrical Specifications
Equipment Design 25oC (CA3096A Only) CA3096A
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
TRANSISTORS DIFFERENTIAL AMPLIFIER) Absolute Input Offset Voltage Absolute Input Offset Current Absolute Input Offset Voltage Temperature Coefficient |VIO| |IIO| 0.07 µV/oC
TRANSISTORS DIFFERENTIAL AMPLIFIER) Absolute Input Offset Voltage Absolute Input Offset Current Absolute Input Offset Voltage Temperature Coefficient |VIO| |IIO| -5V, -100µA 0.15 0.54 µV/oC
CA3096, CA3096A, CA3096C
Electrical Specifications
PARAMETER Typical Values Intended Only Design Guidance 25oC TYPICAL VALUES
SYMBOL
TEST CONDITIONS
UNITS
DYNAMIC CHARACTERISTICS EACH TRANSISTOR Noise Figure (Low Frequency) Low-Frequency, Input Resistance Low-Frequency Output Resistance Admittance Characteristics Forward Transfer Admittance Input Admittance Output Admittance Gain-Bandwidth Product 1MHz, 1MHz, 1MHz, 1MHz, 1MHz, 1MHz, 1.0mA Emitter-To-Base Capacitance Collector-To-Base Capacitance Collector-To-Substrate Capacitance -j13 j3.1 0.76 j2.4 0.75 0.46 1kHz, 1mA, 1.0kHz, 1.0kHz,
DYNAMIC CHARACTERISTICS EACH TRANSISTOR Noise Figure (Low Frequency) Low-Frequency Input Resistance Low-Frequency Output Resistance Gain-Bandwidth Product Emitter-To-Base Capacitance Collector-To-Base Capacitance Base-To-Substrate Capacitance 1kHz, 100µA, 1kHz, 100µA 1kHz, 100µA 100µA 0.85 2.25 3.05
Typical Applications
(SUBSTRATE) 0.1µF 0.1µF NOTE: 10kHz 44003 OUTPUT OUTPUT VOLTAGE CENTER FREQUENCY: 1kHz
FREQUENCY DEVIATION (kHz)
FIGURE FREQUENCY COMPARATOR USING CA3096
FIGURE FREQUENCY COMPARATOR CHARACTERISTICS
CA3096, CA3096A, CA3096C Typical Applications
(Continued)
SENSOR 120VAC 6.8k 5.1k 100µF 5.1k
T2300B
LOAD
FIGURE LINE-OPERATED LEVEL SWITCH USING CA3096A CA3096
40841 MOSFET
OUTPUT 3.9k
TIME DELAY CHANGES SUPPLY VOLTAGE CHANGE ±10%
FIGURE ONE-MINUTE TIMER USING CA3096A MOSFET
36mV
FIGURE CA3096A SMALL-SIGNAL ZERO VOLTAGE DETECTOR HAVING NOISE IMMUNITY
CA3096, CA3096A, CA3096C Typical Applications
(Continued)
1.5V 1.5M 500k LAMP 2158D EQUIVALENT
(SUBSTRATE)
FIGURE TEN-SECOND TIMER OPERATED FROM 1.5V SUPPLY USING CA3096
100k INPUT 100k
6.2k
6.2k OUTPUT
NOTES:
100k
operated with either dual supply single supply. Wide-input common mode range -5V. bias current: <1µA.
FIGURE CASCADE DIFFERENTIAL AMPLIFIERS USING CA3096A
VOLTAGE GAIN (dB)
FREQUENCY (kHz) 1000
FIGURE FREQUENCY RESPONSE
CA3096, CA3096A, CA3096C Typical Performance Curves
COLLECTOR CUT-OFF CURRENT (pA)
ZENER CURRENT (mA)
10-1
10-2
ZENER VOLTAGE
10-1 -100
TEMPERATURE (oC)
FIGURE BASE-TO-EMITTER ZENER CHARACTERISTIC (NPN)
FIGURE COLLECTOR CUT-OFF CURRENT (ICEO) TEMPERATURE (NPN)
FORWARD CURRENT TRANSFER RATIO
COLLECTOR CUT-OFF CURRENT (pA)
85oC 25oC -40oC
10-1
10-2
0.01
TEMPERATURE (oC)
COLLECTOR CURRENT (mA)
FIGURE COLLECTOR CUT-OFF CURRENT (ICBO) TEMPERATURE (NPN)
FIGURE TRANSISTOR (NPN) COLLECTOR CURRENT
BASE EMITTER VOLTAGE BASE EMITTER VOLTAGE 10mA, 1.67mV/oC 5mA, 1.77mV/oC 1mA, 1.90mV/oC 100µA, 2.05mV/oC
0.01
COLLECTOR CURRENT (mA)
TEMPERATURE (oC)
FIGURE (NPN) COLLECTOR CURRENT
FIGURE (NPN) TEMPERATURE
CA3096, CA3096A, CA3096C Typical Performance Curves
(Continued)
COLLECTOR EMITTER SATURATION VOLTAGE 25oC -40oC
COLLECTOR CUT-OFF CURRENT (pA)
85oC
-10V
-15V
COLLECTOR CURRENT (mA) TEMPERATURE (oC)
FIGURE (NPN) COLLECTOR CURRENT
FIGURE COLLECTOR CUT-OFF CURRENT (ICEO) TEMPERATURE (PNP)
0.01 COLLECTOR CURRENT (mA)
-15V -10V
TEMPERATURE (oC)
FIGURE COLLECTOR CUT-OFF CURRENT (ICBO) TEMPERATURE (PNP)
10µA
FIGURE TRANSISTOR (PNP) COLLECTOR CURRENT
FORWARD CURRENT TRANSFER RATIO
COLLECTOR CUT-OFF CURRENT (pA)
FORWARD CURRENT TRANSFER RATIO
BASE EMITTER VOLTAGE
100µA
0.01
TEMPERATURE (oC)
COLLECTOR CURRENT (mA)
FIGURE TRANSISTOR (PNP) TEMPERATURE
FIGURE (PNP) COLLECTOR CURRENT
CA3096, CA3096A, CA3096C Typical Performance Curves
(Continued)
MAGNITUDE INPUT OFFSET VOLTAGE (mV) 0.01 COLLECTOR CURRENT (mA)
BASE EMITTER VOLTAGE 5mA, VBE/T 0.97mV/oC 1mA, -1.84mV/oC
100µA, -2.2mV/oC
TEMPERATURE (oC)
FIGURE (PNP) TEMPERATURE
FIGURE MAGNITUDE INPUT OFFSET VOLTAGE |VIO| COLLECTOR CURRENT TRANSISTOR
RSOURCE NOISE FIGURE (dB) 100µA 10µA
MAGNITUDE INPUT OFFSET VOLTAGE (mV)
0.01
COLLECTOR CURRENT (mA)
0.01
FREQUENCY (kHz)
FIGURE MAGNITUDE INPUT OFFSET VOLTAGE |VIO| COLLECTOR CURRENT TRANSISTOR
RSOURCE NOISE FIGURE (dB) 0.01 100µA 10µA
FIGURE NOISE FIGURE FREQUENCY TRANSISTORS
RSOURCE NOISE FIGURE (dB) 0.01 10µA 100µA
FREQUENCY (kHz)
FREQUENCY (kHz)
FIGURE NOISE FIGURE FREQUENCY TRANSISTORS
FIGURE NOISE FIGURE FREQUENCY TRANSISTORS
CA3096, CA3096A, CA3096C Typical Performance Curves
NOISE FIGURE (dB) 100µA 10µA 10µA 0.01 FREQUENCY (kHz) COLLECTOR CURRENT (mA) 100µA
(Continued)
GAIN-BANDWIDTH PRODUCT (MHz)
RSOURCE 100k RSOURCE
FIGURE NOISE FIGURE FREQUENCY TRANSISTORS
FIGURE GAIN-BANDWIDTH PRODUCT COLLECTOR CURRENT (NPN)
INPUT RESISTANCE
1000 1kHz
CAPACITANCE (pF)
0.01
BIAS VOLTAGE
COLLECTOR CURRENT (mA)
FIGURE CAPACITANCE BIAS VOLTAGE (NPN)
FIGURE INPUT RESISTANCE COLLECTOR CURRENT
FORWARD TRANSFER CONDUCTANCE (gFE) FORWARD TRANSFER SUSCEPTANCE (bFE) (mS)
1kHz
OUTPUT RESISTANCE
100µA 100µA
0.01
FREQUENCY (MHz)
COLLECTOR CURRENT (mA)
FIGURE OUTPUT RESISTANCE COLLECTOR CURRENT
FIGURE FORWARD TRANSCONDUCTANCE FREQUENCY
CA3096, CA3096A, CA3096C Typical Performance Curves
INPUT CONDUCTANCE (gIE) INPUT SUSCEPTANCE (bIE) (mS) 10mA
(Continued)
OUTPUT CONDUCTANCE (gOE) OUTPUT SUSCEPTANCE (bOE) (mS)
10mA 100µA 10µA
100µA
100µA
100µA 10µA FREQUENCY (MHz)
FREQUENCY (MHz)
FIGURE INPUT ADMITTANCE FREQUENCY
FIGURE OUTPUT ADMITTANCE FREQUENCY
RSOURCE
RSOURCE
NOISE FIGURE (dB)
10µA 100µA
NOISE FIGURE (dB)
10µA 100µA
0.01
FREQUENCY (kHz)
0.01
FREQUENCY (kHz)
FIGURE NOISE FIGURE FREQUENCY (PNP)
RSOURCE GAIN-BANDWIDTH PRODUCT (MHz)
FIGURE NOISE FIGURE FREQUENCY (PNP)
NOISE FIGURE (dB)
10µA 0.01
100µA
FREQUENCY (kHz)
COLLECTOR CURRENT (mA)
FIGURE NOISE FIGURE FREQUENCY (PNP)
FIGURE GAIN-BANDWIDTH PRODUCT COLLECTOR CURRENT (PNP)
CA3096, CA3096A, CA3096C Typical Performance Curves
(Continued)
CAPACITANCE (pF)
BIAS VOLTAGE
FIGURE CAPACITANCE BIAS VOLTAGE (PNP)
Metallization Mask Layout
CA3096H
37-45 (0.940-1.143)
4-10 (0.102-0.254) 37-45 (0.940-1.143)
Dimensions parentheses millimeters derived from basic inch dimensions indicated. Grid graduations mils (10-3 inch). photographs dimensions represent chip when part wafer. When wafer into chips, cleavage angles degrees instead degrees with respect face chip. Therefore, isolated chip actually 7mils (0.17mm) larger both dimensions.
CA3096, CA3096A, CA3096C Dual-In-Line Plastic Packages (PDIP)
BASE PLANE SEATING PLANE 0.010 (0.25)
E16.3 (JEDEC MS-001-BB ISSUE
LEAD DUAL-IN-LINE PLASTIC PACKAGE INCHES SYMBOL 0.015 0.115 0.014 0.045 0.008 0.735 0.005 0.300 0.240 0.210 0.195 0.022 0.070 0.014 0.775 0.325 0.280 MILLIMETERS 0.39 2.93 0.356 1.15 0.204 18.66 0.13 7.62 6.10 5.33 4.95 0.558 1.77 0.355 19.68 8.25 7.11 NOTES Rev. 12/93
NOTES: Controlling Dimensions: INCH. case conflict between English Metric dimensions, inch dimensions control. Dimensioning tolerancing ANSI Y14.5M-1982. Symbols defined Series Symbol List" Section Publication Dimensions measured with package seated JEDEC seating plane gauge GS-3. dimensions include mold flash protrusions. Mold flash protrusions shall exceed 0.010 inch (0.25mm). measured with leads constrained perpendicular datum measured lead tips with leads unconstrained. must zero greater. maximum dimensions include dambar protrusions. Dambar protrusions shall exceed 0.010 inch (0.25mm). maximum number terminal positions. Corner leads E8.3, E16.3, E18.3, E28.3, E42.6 will have dimension 0.030 0.045 inch (0.76 1.14mm).
0.100 0.300 0.115 0.430 0.150
2.54 7.62 2.93 10.92 3.81
CA3096, CA3096A, CA3096C Small Outline Plastic Packages (SOIC)
INDEX AREA SEATING PLANE 0.25(0.010)
M16.15 (JEDEC MS-012-AC ISSUE
LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE INCHES SYMBOL
MILLIMETERS 1.35 0.10 0.33 0.19 9.80 3.80 1.75 0.25 0.51 0.25 10.00 4.00 NOTES Rev. 12/93
0.0532 0.0040 0.013 0.0075 0.3859 0.1497
0.0688 0.0098 0.020 0.0098 0.3937 0.1574
0.10(0.004)
0.25(0.010)
0.050 0.2284 0.0099 0.016 0.2440 0.0196 0.050
1.27 5.80 0.25 0.40 6.20 0.50 1.27
NOTES: Symbols defined Series Symbol List" Section Publication Number Dimensioning tolerancing ANSI Y14.5M-1982. Dimension does include mold flash, protrusions gate burrs. Mold flash, protrusion gate burrs shall exceed 0.15mm (0.006 inch) side. Dimension does include interlead flash protrusions. Interlead flash protrusions shall exceed 0.25mm (0.010 inch) side. chamfer body optional. present, visual index feature must located within crosshatched area. length terminal soldering substrate. number terminal positions. Terminal numbers shown reference only. lead width "B", measured 0.36mm (0.014 inch) greater above seating plane, shall exceed maximum value 0.61mm (0.024 inch). Controlling dimension: MILLIMETER. Converted inch dimensions necessarily exact.
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