HVM121WK Silicon Epitaxial Planar Diode High Frequency Attenuator
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ADE-208-042C(Z)
HVM121WK Silicon Epitaxial Planar Diode High Frequency Attenuator
Preliminary Rev. Jun. 1993 Features
capacitance. 0.7pF max) MPAK package suitable high density surface mounting high speed assembly.
Arrangement
Ordering Information
Type HVM121WK Laser Mark Package Code MPAK
(Top View)
Anode Anode Cathode
Absolute Maximum Ratings 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature device Symbol Tstg Value +125 Unit
Electrical Characteristics 25°C)
Item Forward voltage Reverse current Capacitance Forward resistance Symbol Unit Test Condition
HVM121WK
Reverse current 10-8
Forward current
10-6
10-10
Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage Fig.2 Reverse current Reverse voltage
f=1MHz
f=100MHz
Forward resistance
Capacitance (pF)
Reverse voltage Fig.3 Capacitance Reverse voltage
Forward current Fig.4 Forward resistance Forward current
HVM121WK
Package Dimensions
0.65
Unit:
Laser Mark
0.05
0.10
0.16 0.06
0.10
0.65
0.95
0.95
0.10
Anode Anode Cathode HITACHI Code MPAK(1) JEDEC Code EIAJ Code Weight SC-59A 0.011
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