input stages driver applications High current gain collector-emitter s

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

input stages driver applications High current gain collector-emitter s

Datasheet Thumbnail

Top Searches for this datasheet

856W 860W
input stages driver applications High current gain collector-emitter saturation voltage noise between Complementary types: 847W, 848W, 849W, 850W (NPN)
Type
Marking
Ordering Code (tape reel) Q62702-C2335 Q62702-C2292 Q62702-C2293 Q62702-C2294 Q62702-C2295 Q62702-C2296 Q62702-C2297 Q62702-C2298 Q62702-C2299 Q62702-C2300 Q62702-C2301 Q62702-C2302 Q62702-C2303
Configuration
Package1) SOT-323
1)For
detailed information chapter Package Outlines.
Semiconductor Group
04.96
856W 860W
Maximum Ratings Description Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Total power dissipation, Junction temperature Storage temperature range Thermal Resistance Junction ambient1) Junction soldering point
Symbol VCEO VCBO VCES VEBO Ptot Tstg
856W 857W 858W Unit 860W 859W
Semiconductor Group
856W 860W
Electrical Characteristics unless otherwise specified. Parameter Symbol min. characteristics Collector-emitter breakdown voltage 856W 857W, 860W 858W, 859W V(BR)CE0 V(BR)EB0 ICB0 VCEsat VBEsat VBE(on) Values typ. max. Unit
Collector-base breakdown voltage V(BR)CB0 856W 857W, 860W 858W, 859W Collector-emitter breakdown voltage 856W 857W, 860W 858W, 859W Emitter-base breakdown voltage Collector cutoff current current gain Collector-emitter saturation voltage1) Base-emitter saturation voltage1) Base-emitter voltage
1)Pulse
V(BR)CES
test:
Semiconductor Group
856W 860W
Electrical Characteristics unless otherwise specified. Parameter Symbol min. characteristics Transition frequency Output capacitance Input capacitance Short-circuit input impedance Open-circuit reverse voltage transfer ratio Short-circuit forward current transfer ratio Open-circuit output admittance Noise figure 859W 860W 859W kHz, 860W Equivalent noise voltage 860W
Semiconductor Group
Values typ. max.
Unit
Cobo Cibo h11e
h12e
h21e
h22e
0.110
856W 860W
Total power dissipation Ptot (TA*; Package mounted epoxy
Collector-base capacitance CCB0 (VCB0) Emitter-base capacitance CEB0 (VEB0)
Permissible pulse load Ptot max/Ptot (tp)
Transition frequency (IC)
Semiconductor Group
856W 860W
Collector cutoff current ICB0 (TA)
Collector-emitter saturation voltage (VCEsat),
current gain (IC)
Base-emitter saturation voltage (VBEsat),
Semiconductor Group
856W 860W
parameter (IC) normalized
parameter (VCE) normalized
Noise figure (VCE)
Noise figure
Semiconductor Group
856W 860W
Noise figure (IC)
Noise figure (IC)
Noise figure (IC)
Semiconductor Group

input stages driver applications High current gain collector-emitter s

Top Searches for this datasheet

Other recent searches