input stages driver applications High current gain collector-emitter s
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Silicon Transistor
input stages driver applications High current gain collector-emitter saturation voltage noise between 30Hz Complementary types: W,BC (PNP)
Type
Marking
Ordering code (tape reel) Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702-C2309 Q62702-C2310 Q62702-C2311 Q62702-C2312 Q62702-C2313
Configuration
Package
Semiconductor Group
04.96
846W 850W
Maximum Ratings Description Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Total power dissipation, Junction temperature Storage temperature range Thermal Resistance Junction ambient1) Junction soldering point
Symbol VCEO VCBO VCES VEBO Ptot Tstg
BC846W
Unit
1)Package
mounted epoxy mm/1
Semiconductor Group
846W 850W
Characteristic unless otherwise specified. Description Symbol min. Characteristics Collector-emitter breakdown voltage V(BR)CEO V(BR)CBO Collector-base breakdown voltage1) V(BR)CBO Collector-emitter breakdown voltage V(BR)EBO Emitter-base breakdown voltage Collector-base cutoff current ICBO VCEsat VCEsat VCEsat Ratings typ. max. Unit
current gain
Collector-emitter saturation voltage1) Base-emitter saturation voltage1) Base-emitter voltage1)
1)Pulse
test
Semiconductor Group
846W 850W
Characteristics unless otherwise specified. Description Symbol min. Characteristics Transition frequency Output capacitance Input capacitance Cobo Cibo 10-4 0.135 Ratings typ. max. Unit
Short-circuit input impedance h11e Open-circuit reverse voltage transfer ratio h12e Short-circuit forward current transfer ratio h21e Open-circuit output admittance h22e Noise figure kHz, Equivalent noise voltage Curves
Semiconductor Group
846W 850W
Total power dissipation Ptot (TA*; Package mounted epoxy
Collector-base capacitance CCB0 (VCB0) Emitter-base capacitance CEB0 (VEB0)
Permissible pulse load Ptot max/Ptot (tp)
Transition frequency (IC)
Semiconductor Group
846W 850W
Collector cutoff current ICB0 (TA)
Collector-emitter saturation voltage (VCEsat),
current gain (IC)
Base-emitter saturation voltage (VBEsat),
Semiconductor Group
846W 850W
parameter (IC) normalized
parameter (VCE) normalized
Noise figure (VCE)
Noise figure
Semiconductor Group
846W 850W
Noise figure (IC)
Noise figure (IC)
Noise figure (IC)
Semiconductor Group
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