mixer application noise figure Medium barrier type 14-099 ES
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Silicon Dual Schottky Diode
mixer application noise figure Medium barrier type
14-099
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type 14-099 Marking Ordering Code (tape reel) Q62702-A3461 Configuration Package1) SOT-143
Maximum Ratings Diode Parameter Reverse voltage Forward current Power dissipation, Storage temperature range Operating temperature range Thermal Resistance Junction ambient2) Junction soldering point
Symbol Ptot Tstg
Values
Unit
1090
detailed information chapter Package Outlines. Package mounted alumina 16.7
Semiconductor Group
02.96
14-099
Electrical Characteristics Diode unless otherwise specified. Parameter Breakdown voltage Forward voltage Forward voltage matching Diode capacitance Forward resistance Symbol min.
Values typ. max.
Unit
0.43 0.55
0.35
Semiconductor Group
14-099
Forward current (VF)
Forward current (TS; TA*) *Package mounted alumina
Reverse current (VR)
Diode capacitance (VR)
Semiconductor Group
14-099
S11-Parameters Typical impedance characteristics (with external bias 0.02 0.99 0.96 0.95 0.93 0.93 0.91 0.89 0.88 0.86 0.83 0.82 0.80 15.89 30.40 45.30 59.60 74.80 89.50 106.60 123.40 143.20 166.10 168.10 138.20 0.05 0.91 0.88 0.87 0.86 0.85 0.83 0.80 0.79 0.76 0.72 0.71 0.72 16.40 30.80 46.20 61.60 77.10 93.10 110.50 129.40 150.20 174.10 158.10 127.20 0.79 0.76 0.75 0.73 0.72 0.69 0.66 0.64 0.62 0.58 0.59 0.60 16.40 31.09 47.30 62.40 78.70 95.70 112.70 132.40 154.20 179.10 153.80 121.20 0.57 0.56 0.55 0.53 0.51 0.48 0.45 0.43 0.40 0.37 0.39 0.44 16.60 30.70 47.00 62.40 78.70 95.70 114.00 135.40 161.20 171.10 140.80 108.20 0.13 0.13 0.11 0.10 0.07 0.04 0.02 0.06 0.12 0.19 0.25 0.33 17.30 28.40 43.99 54.40 80.70 102.30 158.01 118.40 96.20 72.10 62.60 49.20
Semiconductor Group
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