Simple-sWitch-Off Transistor (SWOT) HIGH SPEED technology Planar passi

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Simple-sWitch-Off Transistor (SWOT) HIGH SPEED technology Planar passi

Datasheet Thumbnail

Top Searches for this datasheet

BUF630
Simple-sWitch-Off Transistor (SWOT) HIGH SPEED technology Planar passivation switching rate Very switching losses Very dynamic saturation Very operating temperature Optimized RBSOA High reverse voltage
14283
Applications
Electronic lamp ballast circuits Switch-mode power supplies
Absolute Maximum Ratings
Tcase 25°C, unless otherwise specified Parameter Collector-emitter voltage Test Conditions Symbol VCEO VCEW VCES VEBO Ptot Tstg Value +150 Unit
Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range
Tcase 25°C
Maximum Thermal Resistance
Tcase 25°C, unless otherwise specified Parameter Junction case Test Conditions Symbol RthJC Value Unit
Document Number 86508 Rev. 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600
BUF630
Vishay Telefunken Electrical Characteristics
Tcase 25°C, unless otherwise specified Test Conditions VCES VCES Tcase 150°C Collector-emitter breakdown voltage (figure Imeasure Emitter-base breakdown voltage Collector-emitter saturation voltage 0.25 Base-emitter saturation voltage 0.25 forward current transfer ratio Collector-emitter working voltage -IB2 -VBB Dynamic saturation voltage Gain bandwidth product Parameter Collector cut-off current Symbol ICES ICES V(BR)CEO V(BR)EBO VCEsat VCEsat VBEsat VBEsat VCEW VCEsatdyn VCEsatdyn Unit
www.vishay.de FaxBack +1-408-970-5600
Document Number 86508 Rev. 20-Jan-99
BUF630
Vishay Telefunken Switching Characteristics
Tcase 25°C, unless otherwise specified Parameter Test Conditions Resistive load (figure Turn time 0.25 -IB2 Storage time Fall time Turn time -IB2 Storage time Fall time Inductive load (figure Storage time 0.25 -IB2 Vclamp Fall time Storage time -IB2 Vclamp Fall time Symbol 0.15 0.35 0.25 0.15 0.15 Unit
8863
Imeasure
V(BR)CEO Pulses
V(BR)CEO
I(BR)R
Figure Test circuit V(BR)CE0
Document Number 86508 Rev. 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600
BUF630
8852
-IB2
toff
Fast electronic switch
Figure Test circuit switching characteristics resistive load
8853
-IB2 Vclamp
Fast electronic switch Fast recovery rectifier
Figure Test circuit switching characteristics inductive load
www.vishay.de FaxBack +1-408-970-5600
Document Number 86508 Rev. 20-Jan-99
BUF630
Vishay Telefunken Typical Characteristics (Tcase 25_C unless otherwise specified)
Total Power Dissipation Collector Current 12.5
0.01 0.001 RthJA
VCEsat
10525
10498
Collector Emitter Voltage
Tcase Case Temperature
Figure VCEW Diagram
Collector Current
10502
Figure Ptot vs.Tcase
CEsat Collector Emitter Saturation Voltage
0.8A 0.01 0.01
Collector Emitter Voltage
10503
Base Current
Figure
Forward Current Transfer Ratio Forward Current Transfer Ratio
Figure VCEsat
125°C 75°C 25°C
0.01
10500
10501
0.01
Collector Current
Collector Current
Figure
Figure
Document Number 86508 Rev. 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600
BUF630
saturated switching R-load 0.12A Fall Time
Storage Time
Tcase 125°C 25°C
Tcase 125°C 25°C -IB2/IB1
saturated switching R-load 0.12A -IB2/IB1
10507
10506
Figure -IB2/IB1
saturated switching R-load 0.25A Fall Time
Figure -IB2/IB1
Storage Time
saturated switching R-load 0.25A
Tcase 125°C 25°C
Tcase 125°C 25°C
10505
-IB2/IB1
10504
-IB2/IB1
Figure -IB2/IB1
Figure -IB2/IB1
www.vishay.de FaxBack +1-408-970-5600
Document Number 86508 Rev. 20-Jan-99
BUF630
Vishay Telefunken Dimensions
0.52 0.40
2.70 2.35 1.40 1.27
0.85 0.65
10.4
2.64 2.44 13.6 12.2 16.0 15.2 Standard Plastic Case JEDEC
9184
technical drawings according specifications
Collector connected with metallic surface
Document Number 86508 Rev. 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600
BUF630
Vishay Telefunken Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs Montreal Protocol 1987 London Amendments 1990 intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay-Telefunken products unintended unauthorized application, buyer shall indemnify Vishay-Telefunken against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
www.vishay.de FaxBack +1-408-970-5600
Document Number 86508 Rev. 20-Jan-99

Simple-sWitch-Off Transistor (SWOT) HIGH SPEED technology Planar passi

Top Searches for this datasheet

Other recent searches