ADE-208-714A 2nd. Edition Dec. 1998 Features Build Biasing Circui
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BB202M
ADE-208-714A 2nd. Edition Dec. 1998 Features
Build Biasing Circuit; reduce using parts cost board space. noise characteristics; typ. MHz) Withstanding ESD; Build absorbing diode. Withstand 200V C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4R(SOT-143 var.)
Outline
Notes: Marking "BV-". BB202M individual type number HITACHI BBFET.
BB202M
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate1 source voltage Gate2 source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VG1S VG2S Tstg Ratings +150 Unit
Electrical Characteristics 25°C)
Item Symbol 0.011 +100 ±100 0.03 Unit Test Conditions 200µA, VG1S VG2S +10µA, ±10µA, VG1S VG1S +9V, VG2S ±9V, VG1S VG2S 100µA VG1S 100µA VG2S 560k VG2S 560k, 1kHz VG2S =6V, 560k 1MHz VG2S 560k, 900MHz Drain source breakdown voltage V(BR)DSS Gate1 source breakdown voltage V(BR)G1SS Gate2 source breakdown voltage V(BR)G2SS Gate1 source cutoff current Gate2 source cutoff current Gate1 source cutoff voltage Gate2 source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure G1SS G2SS VG1S(off) VG2S(off) D(op) |yfs|
BB202M
Main Characteristics
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Sparameter VG2S 560k,
(MHz) 1000 0.995 0.991 0.987 0.985 0.975 0.969 0.954 0.948 0.933 0.923 0.912 0.892 0.882 0.868 0.851 0.834 0.815 0.801 0.788 0.768 -2.9 -6.0 -9.4 -12.4 -15.4 -18.4 -21.5 -24.6 -27.5 -30.7 -33.6 -36.3 -39.3 -42.0 -45.0 -47.7 -50.6 -53.5 -55.9 -58.5 2.22 2.21 2.21 2.19 2.18 2.15 2.12 2.11 2.08 2.05 2.02 1.99 1.96 1.92 1.90 1.87 1.83 1.82 1.79 1.77 176.0 172.0 168.0 163.6 159.3 155.3 151.7 147.6 143.7 139.9 136.2 123.9 128.7 125.4 122.0 117.9 114.9 111.2 107.8 104.4 0.00046 0.00109 0.00122 0.00180 0.00228 0.00246 0.00273 0.00331 0.00334 0.00357 0.00328 0.00305 0.00322 0.00297 0.00286 0.00273 0.00226 0.00143 0.00131 0.00189 66.9 90.4 76.5 81.9 86.0 78.8 76.2 66.9 74.7 68.4 67.5 69.8 66.7 70.3 74.4 71.9 88.1 95.5 98.6 145.2 0.977 0.987 0.987 0.985 0.983 0.981 0.979 0.976 0.973 0.969 0.965 0.961 0.958 0.953 0.948 0.944 0.940 0.934 0.931 0.925 -1.0 -3.2 -5.0 -6.7 -8.4 -10.0 -11.7 -13.4 -14.9 -16.8 -18.3 -19.9 -21.5 -23.4 -24.7 -26.2 -27.9 -29.4 -31.0 -32.9
BB202M
Package Dimensions
Unit:
BB202M
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
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