High side isolation 1000V Common-mode dv/dt immunity greater than 50V/

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High side isolation 1000V Common-mode dv/dt immunity greater than 50V/

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EVBD4400 HALF BRIDGE DRIVER Evaluation Board
High side isolation 1000V Common-mode dv/dt immunity greater than 50V/nanosecond On-chip generated negative gate drive Overcurrent protection means desaturation detection Under voltage lockout Fault indication output system diagnostic Optimized power circuit layout High side bootstrap supply Sockets freewheeling fast recovery diodes (FREDS) Flexibility power level utilization compatible HCMOS input logic with hysterisis Protection from cross conduction half bridge Simple, fast cost means evaluation design Option using IXDP630 with oscillator IXDP631 with crystal oscillator improved dead time accuracy. Three phase operation with ability attach additional slave driver boards.
EVBD4400 evaluation board implements single power phaseleg circuit double sided with ground plane, using proven ISOSMARTHALF BRIDGE DRIVER CHIPSET IXBD4410, IXBD4411, IXDP630. IXDP631 optional. This board includes parts required circuit implementation that just follow instructions this document connect board load power. consists assembled tested with power devices. power circuit layout sensitive. layout this proven, working layout. designer invited duplicate this layout system, following evaluation driver chipset. Most systems vary their power level requirements therefore power devices used. this fact fluctuations availability power devices, will always include same power devices. designer encouraged power devices that required system. devices that enclosed serve only initial evaluation.
Figure EVBD4400 Assembled board
Copyright IXYS CORPORATION 2003
DS99026A(07/03)
First Release
EVBD4400
Figure EVBD4400 solder side
Figure EVBD4400 Schematic
EVBD4400
ASSEMBLY:
Figure complete schematic diagram board. This schematic indicates application using MOSFET's. When IGBT used, freewheeling diodes (D4&D5) typically added. assemble kit, simply solder MOSFET power devices included install devices specific your application. Note gate, drain, source orientation power devices when installing board.
DATA SHEETS:
following list provides direct links IXYS devices included with this kit. Please visit IXYS site www.ixys.com complete overview entire IXYS product line. IXTH 6N90 Power MOSFETS: http://www.ixys.com/91543.pdf IXDB4410/11 Half Bridge Driver Chip Set: http://www.ixys.com/96528.pdf IXDP630 Digital Dead Time Generator http://www.ixys.com/98568.pdf TX02-4400 Interface Transformer http://www.ixys.com/99016.pdf also possible construct your pulse transformers from scratch using guidelines presented discussion located
NOTES:
Power devices static sensitive require special handling. power device that suitable your application. designed accept devices with TO247 packages. IXYS power devices included with their data sheet. required only IGBTs, thus included your kit. recommendation Bill Materials). footprints provide smaller package footprint option. convenient method interconnection GND, Q1-D, Q2-S,DC-BUS. hole spacing standard 5.08mm will common terminal blocks. recommendation connector 'P2' that will accept Bill Materials available from Digi-Key among others). fault detection, pulled supply voltage front logic. (fault) signal sensed logic, remove connect externally from P1-5 through pull resistor. half bridge applications, insert jumper between Q1-D Q2-S. gate resistors, R11, will depend power device size that used. Twenty resistors installed should work most applications. Dead time provided timing components R17, fixed roughly IXDP630 data sheet calculation modification dead time value.
EVBD4400
Bill Materials
Reference
R15, C2,3,7,9,11,13, 16,17,18,19 C8,12, C1,4,10,14 JP1, INCLUDED: C22,
Qty. Description
side gate driver I.C. High side gate driver Dead time generator I.C. (IXDP631 optional) regulator 1000V high speed diode socket pins socket 20V, Shottky diode High voltage power device Interface transformer ohm, resistor 4.7ohm, resistors ohm, resistors ohm, resistors 4.7k ohm, resistors ohm, resistor 510k ohm, resistors ohm, IXDP630 timing resistor 82pF IXDP630 timing .1mF, 50V, ceramic .022mF, 50V, cermaic .01mF, 50V, ceramic 10mF, 25V, alum elect .1mF, 1000V, ceramic header (cut into header) header/ jumpers (cut into headers) Crystal based dead time generator 12A, 1000V fast recovery diode pole terminal block ohm, IXDP631 load resistor Crystal load capacitors, 22pF ceramic Crystal IXDP631 operation
Mfr.
IXYS IXYS IXYS National Semi. Assmann Assmann Diodes IXYS IXYS
Part
IXBD4410PI IXBD4411PI IXDP630 LM78L05ACZ BYT11-1000 A16-LC-TT A18-LC-TT 1N5817 IXTH6N90 TX02-4400PI
Panasonic Panasonic Panasonic Panasonic Sprague Berg Berg IXYS IXYS Altech Corp. Panasonic Pletronics
10GAP10 68000-236 68000-236 IXDP631 DSEI12-10A AKZ250/4
EVBD4400
OPERATION:
performance evaluation power system design please note following: assembled board with IXDP630/631 removed applying complementary square waves with proper "dead time" input pins (P1-3) (P12). standard IXDP630 operation, have been loaded with their respective values represented bill materials. These values demonstration appropriate your application. Change values needed. IXDP631 operation, load R17, C22, with recommended load components outlined IXDP630/631 data sheet along with crystal frequency choice. serve dual purpose depending which dead timer selected. IXDP630 hardwired phase operation, 630/631 data sheet, with pins OUTENA, ENAR, RESET tied high. drive input signal phase applied P1-6. phases 'T', enable phases with jumpers and/or apply phase drive signals and/ taking respective complementary outputs from through TP6. Note that TP1-TP15 through-hole pads that have been added board serve convenient solder test points. additional 'slave' boards used mutiple phase operation, R19, C23, need installed addtional slave boards. careful with ground connections. Avoid ground loops. general, connect grounds shown Figure minimize ground bounce effects. This particularly important when three "High/Low side driver design kits" connected together with single IXDP630 form three phase drive system, such that shown Figure Before using full power attempting short circuit test, make sure that proper high voltage electroytic capacitor connected between shown Figure leads this capacitor should short possible minimize stray inductance. Figure shows load terminated point This point could connected number places depending application. example: Connection ground will test high side device. Connection will test side device. could also connected center point capacitive divider (UPS systems). Figure shows three phase power system implementation with load configured (star). could also configured DELTA configuration. Please note grounding scheme. connection between "ground plane "ground plane components side solder resistor between these ground planes. each board terminated single ground point.
EVBD4400
(Optional pullup configuration logic)
Figure Dead Time Generator Load Termination
Figure Three Phase Configuration with Dead Time Generator
EVBD4400
Figures schematic assumes designer will using some type external control system starting circuit and/or reseting circuit event fault occures. alternative, Figure demonstrates simple inexpensive Start/Reset logic circuit manually implementing fault protection. With addition High Current MOSFET Drivers outputs, IXBD4410/11's typical Peak Output Current capability "boosted" drive latest IXYS MOSFETS IGBT's. Figure shows addition IXDD414's. These CMOS high-speed MOSFET drivers that have Peak Output Drive Capability, allowing 4410/11 chipset drive pair IXFK90N20Q 90A/ 200V Power Mosfets. (The gate resistors shown should Non-Inductive High Performance Film resistors such those available from Caddock. Particular attention also needs paid Suppy Bypassing, Grounding, minimizing Output Lead Inductance when designing such high power circuit layout).
74HC00
74HC04 Eval
Reset
74HC00
74HC00
74HC04 Eval
.01uF
(From FLT) (n.h.) .01uF 74HC00
Figure Simple Fault Protection Logic Circuit
EVBD4400
10µF
4410
IXFK90N20Q
10µF
4411
IXFK90N20Q
Figure Boosting 4410/11 outputs larger MOSFETs.

High side isolation 1000V Common-mode dv/dt immunity greater than 50V/

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