M3D379 BLF1049 power LDMOS transistor Preliminary specificat

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M3D379 BLF1049 power LDMOS transistor Preliminary specificat

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M3D379
BLF1049 power LDMOS transistor
Preliminary specification 2001
Philips Semiconductors
Preliminary specification
power LDMOS transistor
FEATURES High power gain Easy power control Excellent ruggedness Source underside eliminates isolators, reducing common mode inductance Designed base station applications (800 GHz).
handb
BLF1049
PINNING SOT502A drain gate source, connected flange DESCRIPTION
APPLICATIONS Communication transmitter applications frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated 2-lead flange package (SOT502A) with ceramic cap. common source connected mounting flange. QUICK REFERENCE DATA performance common source test circuit. MODE OPERATION class-AB (MHz) (dBm) (dB) typ.
view
MBK394
Fig.1 Simplified outline.
MODE OPERATION EDGE Note
(MHz)
(dB) typ.
ACPR (dB) typ.
ACPR CAUTION This product supplied anti-static packing prevent damage caused electrostatic discharge during transport handling. further information, refer Philips specs.: SNW-EQ-608, SNW-FQ-302A SNW-FQ-302B.
2001
Philips Semiconductors
Preliminary specification
power LDMOS transistor
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 60134). SYMBOL Ptot Tstg PARAMETER drain-source voltage gate-source voltage total power dissipation storage temperature junction temperature CONDITIONS MIN.
BLF1049
MAX. +150
UNIT
THERMAL CHARACTERISTICS SYMBOL Note Determined under specified operating conditions, based maximum peak junction temperature. CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS RDSon PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance CONDITIONS VGSth MIN. TYP. MAX. UNIT PARAMETER thermal resistance from junction case CONDITIONS Ptot note VALUE 0.41 UNIT
APPLICATION INFORMATION performance common source class-AB circuit. 0.41 K/W, unless otherwise specified. MODE OPERATION class-AB (1-tone) (MHz) (mA) (dBm) (dB) typ.
MODE OPERATION EDGE Note
(MHz)
(mA)
(dB) typ.
ACPR (dB) typ.
ACPR Ruggedness class-AB operation BLF1049 capable withstanding load mismatch corresponding VSWR through phases under following conditions: rated load power. 2001
Philips Semiconductors
Preliminary specification
power LDMOS transistor
BLF1049
(dB)
(dB)
(dBm)
(dBm)
dBm;
MHz; measured under EDGE conditions
Fig.2
Power gain drain efficiency functions load power; typical values.
Fig.3
Power gain drain efficiency functions load power; typical values.
EVMmax
ACPR (dBc)
(dBm)
(dBm)
MHz; measured under EDGE conditions
MHz; kHz; measured under EDGE conditions
Fig.4
Maximum function average load power, typical values.
Fig.5
Intermodulation distortion function average load power, typical values.
2001
Philips Semiconductors
Preliminary specification
power LDMOS transistor
BLF1049
(MHz)
(MHz)
dBm;
dBm;
Fig.6
Source impedance function frequency (series components); typical values.
Fig.7
Load impedance function frequency (series components); typical values.
Dimensions components situated side copper-clad printed-circuit board with Teflon dielectric 6.15), thickness mils. other side unetched serves ground plane.
2001
Fig.8 Component layout 1000 class-AB broadband test circuit.
Philips Semiconductors
Preliminary specification
power LDMOS transistor
List components (see COMPONENT C13, C14, C15, C16, C10, C11, L15, Notes American Technical Ceramics type 100B capacitor same quality. DESCRIPTION VALUE DIMENSIONS
BLF1049
CATALOGUE
multilayer ceramic chip capacitor; note
multilayer ceramic chip capacitor tantalum capacitor trimmer capacitor multilayer ceramic chip capacitor stripline; note stripline; note stripline; note stripline; note Ferrox cube stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note variable resistor 7808 voltage regulator BLF1049 LDMOS transistor
mils mils mils mils mils mils mils 1724 mils 1106 mils mils 1470 mils mils mils mils
striplines double copper-clad printed-circuit board with Teflon dielectric 6.15); thickness mils.
2001
Philips Semiconductors
Preliminary specification
power LDMOS transistor
PACKAGE OUTLINE
BLF1049
Flanged LDMOST ceramic package; mounting holes; leads
SOT502A
scale
DIMENSIONS (millimetre dimensions derived from original inch dimensions) UNIT inches 4.72 3.99 0.186 0.157 12.83 12.57 0.15 0.08 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 1.345 1.335 9.91 9.65 0.390 0.380 0.25 0.01 0.51 0.02
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.210 0.133 0.170 0.123
0.067 1.100 0.057
OUTLINE VERSION SOT502A
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-10-13 99-12-28
2001
Philips Semiconductors
Preliminary specification
power LDMOS transistor
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
BLF1049
This data sheet contains data from objective specification product development. Philips Semiconductors reserves right change specification manner without notice. This data sheet contains data from preliminary specification. Supplementary data will published later date. Philips Semiconductors reserves right change specification without notice, order improve design supply best possible product. This data sheet contains data from product specification. Philips Semiconductors reserves right make changes time order improve design, manufacturing supply. Changes will communicated according Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes Please consult most recently issued data sheet before initiating completing design. product status device(s) described this data sheet have changed since this data sheet published. latest information available Internet
DEFINITIONS Short-form specification data short-form specification extracted from full data sheet with same type number title. detailed information relevant data sheet data handbook. Limiting values definition Limiting values given accordance with Absolute Maximum Rating System (IEC 60134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Applications that described herein these products illustrative purposes only. Philips Semiconductors make representation warranty that such applications will suitable specified without further testing modification.
DISCLAIMERS Life support applications These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips Semiconductors customers using selling these products such applications their risk agree fully indemnify Philips Semiconductors damages resulting from such application. Right make changes Philips Semiconductors reserves right make changes, without notice, products, including circuits, standard cells, and/or software, described contained herein order improve design and/or performance. Philips Semiconductors assumes responsibility liability these products, conveys licence title under patent, copyright, mask work right these products, makes representations warranties that these products free from patent, copyright, mask work right infringement, unless otherwise specified.
2001
Philips Semiconductors worldwide company
Contact information additional information please visit Fax: 24825 sales offices addresses send e-mail
Koninklijke Philips Electronics N.V. 2001 rights reserved. Reproduction whole part prohibited without prior written consent copyright owner.
SCA73
information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
603516/05/pp9
Date release: 2001
Document order number:
9397 09129

M3D379 BLF1049 power LDMOS transistor Preliminary specificat

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