45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs RFP45N02

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45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs RFP45N02

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RFP45N02L, RF1S45N02L, RF1S45N02LSM
45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs
RFP45N02L, RF1S45N02L, RF1S45N02LSM N-Channel power MOSFETs manufactured using MegaFET process. This process, which uses feature sizes approaching those circuits, gives optimum utilization silicon, resulting outstanding performance. They were designed applications such switching regulators, switching converters, motor drivers relay drivers. These transistors operated directly from integrated circuits. Formerly developmental type TA49243.
Features
45A, rDS(ON) 0.022 Temperature Compensating PSPICE Model Driven Directly from CMOS, NMOS, Circuits Peak Current Pulse Width Curve Rating Curve 175oC Operating Temperature
Ordering Information
PART NUMBER RFP45N02L RF1S45N02L RF1S45N02LSM PACKAGE TO-220AB TO-262AA TO-263AB BRAND FP45N02L F45N02L
Symbol
F45N02L
NOTE: When ordering, entire part number. suffix, obtain TO-263AB variant tape reel, e.g. RF1S45N02LSM9A.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
JEDEC TO-262AA
SOURCE DRAIN GATE
DRAIN (FLANGE)
DRAIN (FLANGE)
JEDEC TO-263AB
DRAIN (FLANGE) GATE SOURCE
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
File Number
4342
RFP45N02L, RF1S45N02L, RF1S45N02LSM
Absolute Maximum Ratings
25oC Unless Otherwise Specified RFP45N02L, RF1S45N02L, RF1S45N02LSM Drain Source Voltage VDSS Drain Gate Voltage VDGR Gate Source Voltage Drain Current Continuous Pulsed Drain Current Pulsed Avalanche Rating .EAS Power Dissipation Derate Above 25oC. Operating Storage Temperature .TJ, TSTG Soldering Temperature Leads Refer Peak Current Curve Refer Curve 0.606 W/oC
UNITS
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, VDS, 250µA 20V, ±10V 45A, 15V, 45A, 0.33, 25oC 150oC 15V, 1MHz 16V, 45A, 0.35 1300 ±100 0.022 1.65 UNITS
oC/W oC/W
Drain Source Breakdown Voltage Gate Source Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction Case Thermal Resistance Junction Ambient
IGSS rDS(ON) td(ON) td(OFF) tOFF Qg(TOT) Qg(5) Qg(TH) CISS COSS CRSS
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage Reverse Recovery Time SYMBOL TEST CONDITIONS 45A, dISD/dt 100A/µs UNITS
RFP45N02L, RF1S45N02L, RF1S45N02LSM Typical Performance Curves
POWER DISSIPATION MULTIPLIER CASE TEMPERATURE (oC) DRAIN CURRENT
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION TEMPERATURE DERATING
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
ZJC, NORMALIZED THERMAL IMPEDANCE SINGLE PULSE 0.01 10-5 NOTES: DUTY FACTOR: t1/t2 PEAK 10-3 10-2 10-1 RECTANGULAR PULSE DURATION
10-4
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
25oC, RATED IDM, PEAK CURRENT
TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT FOLLOWS:
DRAIN CURRENT
100µs
10ms 100ms VDSS
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION 25oC 10-5 10-4 10-3 10-2 10-1 PULSE WIDTH
OPERATION THIS AREA LIMITED rDS(ON)
VDS, DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE PEAK CURRENT CAPABILITY
RFP45N02L, RF1S45N02L, RF1S45N02LSM Typical Performance Curves (Continued)
IAS, AVALANCHE CURRENT DRAIN CURRENT STARTING 25oC 4.5V
STARTING 150oC
(L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) 0.001 0.01 TIME AVALANCHE (ms)
3.5V PULSE DURATION 250µs, 25oC
VDS, DRAIN SOURCE VOLTAGE
NOTE: Refer Intersil Application Notes AN9321 AN9322. FIGURE UNCLAMPED INDUCTIVE SWITCHING
ID(ON), ON-STATE DRAIN CURRENT 175oC 25oC rDS(ON), DRAIN SOURCE RESISTANCE
FIGURE SATURATION CHARACTERISTICS
-55oC
PULSE TEST PULSE DURATION 250µs DUTY CYCLE 0.5% VGS, GATE SOURCE VOLTAGE
PULSE DURATION 250µs VGS, GATE SOURCE VOLTAGE
FIGURE TRANSFER CHARACTERISTICS
FIGURE DRAIN SOURCE RESISTANCE GATE VOLTAGE DRAIN CURRENT
PULSE DURATION 250µs, NORMALIZED RESISTANCE
15V, 45A, 0.333 SWITCHING TIME (ns) td(OFF) td(ON) RGS, GATE SOURCE RESISTANCE
JUNCTION TEMPERATURE (oC)
FIGURE SWITCHING TIME FUNCTION GATE RESISTANCE
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
RFP45N02L, RF1S45N02L, RF1S45N02LSM Typical Performance Curves (Continued)
VDS, 250µA NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE 250µA
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
2500 DRAIN SOURCE VOLTAGE 1MHz 2000 CAPACITANCE (pF)
BVDSS BVDSS
5.00 GATE SOURCE VOLTAGE
1500 CISS 1000 COSS CRSS
0.44 IG(REF) 0.5mA PLATEAU VOLTAGES DESCENDING ORDER: BVDSS 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS
3.75
2.50
1.25
VDS, DRAIN SOURCE VOLTAGE
TIME (µs)
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
NOTE: Refer Application Notes AN7254 AN7260. FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
RFP45N02L, RF1S45N02L, RF1S45N02LSM Test Circuits Waveforms
VARY OBTAIN REQUIRED PEAK
BVDSS
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE RESISTIVE SWITCHING TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
Qg(TOT)
Qg(5) Qg(TH) IG(REF)
IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
RFP45N02L, RF1S45N02L, RF1S45N02LSM
Temperature Compensated PSPICE Model RFP45N02L, RF1S45N02L, RF1S45N02LSM
.SUBCKT RFP45N02L
2.55e-9 2.64e-9 1.05e-9
DPLCAP
11/22/94
DBODY DBDMOD DBREAK DBKMOD DPLCAP DPLCAPMOD EBREAK 33.3 EVTO LDRAIN 1e-9 LGATE 4.9e-9 LSOURCE 4.9e-9 MOS1 MOSMOD 0.99 MOS2 MOSMOD 0.01 RBREAK RBKMOD RDRAIN RDSMOD 0.14e-3 RGATE 0.89 RSCL1 RSCLMOD 1e-6 RSCL2 RSOURCE RDSMOD 10.31e-3 RVTO RVTOMOD S1AMOD S1BMOD S2AMOD S2BMOD
GATE
RSCL2 MOS1 RSOURCE MOS2 RSCL1 DBREAK EBREAK
DRAIN LDRAIN
ESCL RDRAIN
DBODY
EVTO LGATE RGATE
LSOURCE SOURCE
RBREAK RVTO VBAT
VBAT 0.583 ESCL VALUE .MODEL DBDMOD 3.61e-13 5.06e-3 TRS1 3.05e-3 TRS2 7.57e-6 2.0e-9 2.18e-8) .MODEL DBKMOD 1.66e-1 TRS1 -2.97e-3 TRS2 7.57e-6) .MODEL DPLCAPMOD (CJO 1.25e-9 1e-30 .MODEL MOSMOD NMOS (VTO 2.313 53.82 1e-30 .MODEL RBKMOD (TC1 8.95e-4 -1e-7) .MODEL RDSMOD (TC1 3.82e-3 1.17e-5) .MODEL RSCLMOD (TC1 2.03e-3 0.45e-5) .MODEL RVTOMOD (TC1 -2.27e-3 -5.75e-7) .MODEL S1AMOD VSWITCH (RON 1e-5 ROFF -4.82 VOFF= -2.82) .MODEL S1BMOD VSWITCH (RON 1e-5 ROFF -2.82 VOFF= -4.82) .MODEL S2AMOD VSWITCH (RON 1e-5 ROFF -2.67 VOFF= 2.33) .MODEL S2BMOD VSWITCH (RON 1e-5 ROFF 2.33 VOFF= -2.67) .ENDS NOTE: further discussion PSPICE model, consult PSPICE Sub-Circuit Power MOSFET Featuring Global Temperature Options; written William Hepp Frank Wheatley.
RFP45N02L, RF1S45N02L, RF1S45N02LSM
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com
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45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs RFP45N02

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