µPA1700A DESCRIPTION This product N-Channel Field Effect Tra

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

µPA1700A DESCRIPTION This product N-Channel Field Effect Tra

Datasheet Thumbnail

Top Searches for this datasheet

FIELD EFFECT POWER TRANSISTORS
µPA1700A
DESCRIPTION
This product N-Channel Field Effect Transistor designed DC/DC converters power management notebook computers.
PACKAGE DIMENSIONS
millimeter)
FEATURES
On-Resistance RDS(on)1 Max. (VGS RDS(on)2 Max. (VGS Input Capacitance
1.44 MAX. 5.37 MAX.
+0.10 -0.05
Source Gate Drain
±0.3
Ciss Typ. Built-in Protection Diode Small Surface Mount Package (Power SOP8)
0.15
0.05 MIN.
±0.2 0.10
1.27 0.78 MAX. 0.40 +0.10 -0.05 0.12
ABSOLUTE MAXIMUM RATINGS terminals connected)
Drain Source Voltage Gate Source Voltage Drain Current (DC) Drain Current (pulse)Note °C)Note Total Power Dissipation Channel Temperature Storage Temperature Notes Duty Cycle Mounted ceramic substrate 1200 diode connected between gate source transistor serves protector against ESD. When this device acutally used, additional protection circuit externally required voltage exceeding rated voltage applied this device. VDSS VGSS ID(DC) ID(pulse) Tstg ±7.0 +150
Gate Gate Protection Source Diode Body Diode Drain
information this document subject change without notice. Document G12008EJ1V0DS00 (1st edition) Date Published April 1997 Printed Japan
1996
µPA1700A
ELECTRICAL CHARACTERISTICS terminals connected)
CHARACTERISTICS Drain Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) |yfs| IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) di/dt A/µs TEST CONDITIONS VGS(on) 0.79 MIN. TYP. MAX. UNIT
Test Circuit Switching Time
Test Circuit Gate Charge
D.U.T.
Wave Form
D.U.T.
VGS(on)
Wave Form
Duty Cycle
td(on) td(off) toff
µPA1700A
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA Percentage Rated Power Total Power Dissipation
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE Mounted ceramic substrate 1200
Ambient Temperature
Ambient Temperature
FORWARD BIAS SAFE OPERATING AREA
ID(pulse)
Note Mounted ceramic substrate 1200
Drain Current
ID(DC)
Single Pulse
Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH rth(t) Transient Thermal Resistance °C/W
Mounted ceramic substrate 1200 Single Single Pulse Pulse Channel Ambient 1000
0.01 0.001
Pulse Width
µPA1700A
FORWARD TRANSFER CHARACTERISTICS Pulsed Drain Current Drain Current
DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
Gate Source Voltage Drain Source Voltage
Forward Transfer Admittance
RDS(on) Drain Source On-State Resistance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT Pulsed
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
Drain Current
Gate Source Voltage
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT VGS(off) Gate Source Cutoff Voltage Pulsed Drain Current VGS=10
GATE SOURCE CUTOFF VOLTAGE CHANNEL TEMPERATURE
Channel Temperature
µPA1700A
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
SOURCE DRAIN DIODE FORWARD VOLTAGE Pulsed
Diode Forward Current
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
Ciss, Coss, Crss Capacitance
td(on), td(off), Switching Time
td(off) td(on)
Ciss Coss
Crss
VGS(on)
Drain Source Voltage
Drain Current
REVERSE RECOVERY TIME DRAIN CURRENT
di/dt
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Reverse Recovery Time
Drain Source Voltage
Diode Current
Gate Charge
Gate Source Voltage
µPA1700A
REFERENCE
Document Name semiconductor device reliability/quality control system Quality grade semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide quality assurance semiconductor devices Application circuits using Power Safe operating area Power Document C11745E C11531E C10535E C10943X MEI-1202 TEA-1035 TEA-1037
µPA1700A
[MEMO]
µPA1700A
part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customers must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact sales representative advance. Anti-radioactive design implemented this product.
96.5

µPA1700A DESCRIPTION This product N-Channel Field Effect Tra

Top Searches for this datasheet

Other recent searches