| |
Datasheet Home \ Datasheet Details
Download
PDF Abstract Text:
PROCESS DETAILS Die Size Die Thickness
CP178
Central
PROCESS DETAILS Die Size Die Thickness
PROCESS
CP178
Semiconductor Corp.
NPN Darlington Transistor
Power Transistor
Emitter Bonding Pad Area Base Bonding Pad Area Top Side Metalization Back Side Metalization
GEOMETRY PRINCIPAL DEVICE TYPES 2N6059
BACKSIDE COLLECTOR BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R0 (12 -June 2003)
|