µPA1731 SWITCHING P-CHANNEL POWER INDUSTRIAL DESCRIPTION

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µPA1731 SWITCHING P-CHANNEL POWER INDUSTRIAL DESCRIPTION

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FIELD EFFECT TRANSISTOR
µPA1731
SWITCHING P-CHANNEL POWER INDUSTRIAL
DESCRIPTION
µPA1731 P-Channel Field Effect Transistor designed power management applications notebook computers Li-ion battery protection circuit.
PACKAGE DRAWING (Unit
1,2,3 Source Gate 5,6,7,8 Drain
FEATURES
on-resistance
1.44
RDS(on)1 10.3 TYP. (VGS -5.0
MAX.
5.37 MAX.
±0.3
+0.10 -0.05
RDS(on)2 14.6 TYP. (VGS -4.5 -5.0
0.05 MIN.
Ciss Ciss =2600 TYP. Built-in protection diode Small surface mount package (Power SOP8)
0.15
RDS(on)3 16.5 TYP. (VGS -4.0 -5.0
±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 -0.05
0.12
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
µPA1731G
ABSOLUTE MAXIMUM RATINGS 25°C, terminals connected.)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) Drain Current (pulse)
Note1 Note2
EQUIVALENT CIRCUIT
Drain
VDSS VGSS ID(DC) ID(pulse) Tstg
Gate Gate Protection Diode
Body Diode
Total Power Dissipation 25°C) Channel Temperature Storage Temperature
Source
Notes Duty Cycle Mounted ceramic substrate 1200 Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document G14285EJ1V0DS00 (1st edition) Date Published October 1999 CP(K) Printed Japan
mark shows major revised points.
1999
µPA1731
ELECTRICAL CHARACTERISTICS terminals connected.)
CHARACTERISTICS Drain Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) TEST CONDITIONS -5.0 -4.5 -5.0 -4.0 -5.0 -5.0 -5.0 VGS(on) di/dt 2600 0.80 MIN. TYP. 10.3 14.6 16.5 MAX. 13.0 19.5 22.0 UNIT
-1.0
-1.6
18.0
-2.5
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
TEST CIRCUIT GATE CHARGE
D.U.T.
(on)
Duty Cycle
Wave Form
(on) (off) toff
Data Sheet G14285EJ1V0DS00
µPA1731
TYPICAL CHARACTERISTICS
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Percentage Rated Power
Total Power Dissipation
Mounted ceramic substrate 1200
Ambient Temperature
Ambient Temperature
-1000 -100 -0.1
FORWARD BIAS SAFE OPERATING AREA
Remark Mounted ceramic substrate
ID(pulse)=40
Drain Current
ID(DC)=10
1200
tion
ited
Single Pulse -0.01 -0.1
-100
Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH 1000
rth(t) Transient Thermal Resistance °C/W
Rth(ch-A) 62.5°C
0.01
Mounted ceramic substrate 1200 Single Pulse
0.001
100µ
1000
Pulse Width
Data Sheet G14285EJ1V0DS00
µPA1731
FORWARD TRANSFER CHARACTERISTICS -100 Pulsed -50°C -25°C 25°C 75°C 125°C 150°C
DRAIN CURRENT DRAIN SOURCE VOLTAGE
Pulsed
-4.5 -4.0
-0.1 -0.01
-0.001 -0.0001 -1.0 -2.0 -3.0 -4.0
Drain Current
Drain Current
-0.2
-0.4
-0.6
-0.8
Gate Source Voltage
Drain Source Voltage
|yfs| Forward Transfer Admittance
-50°C -25°C 25°C 75°C 125°C 150°C
RDS(on) Drain Source On-State Resistance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
-5.0
Pulsed
-0.1
-100
Drain Current
Gate Source Voltage
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT Pulsed -4.0 -4.5
GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
VGS(off) Gate Source Cut-off Voltage
-2.0
-1.5
-1.0
-0.5
-0.1
-100
-100
Drain Current
Channel Temperature
Data Sheet G14285EJ1V0DS00
µPA1731
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE Pulsed -5.0 -4.0 -4.5
SOURCE DRAIN DIODE FORWARD VOLTAGE
Diode Forward Current
-4.5
0.01
0.001 Source Drain Voltage
Channel Temperature
CAPACITANCE DRAIN SOURCE VOLTAGE 0000
td(on), td(off), Switching Time
SWITCHING CHARACTERISTICS td(off) td(on)
Ciss, Coss, Crss Capacitance
Ciss Coss Crss -100
-100
-0.1
-100
-0.1
Drain Source Voltage
Drain Current
REVERSE RECOVERY TIME DIODE CURRENT 10000
Drain Source Voltage
Reverse Recovery Time
1000
-0.1
-100
Diode Current
Gate Charge
Gate Source Voltage
di/dt
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Data Sheet G14285EJ1V0DS00
µPA1731
[MEMO]
Data Sheet G14285EJ1V0DS00
µPA1731
[MEMO]
Data Sheet G14285EJ1V0DS00
µPA1731
information this document subject change without notice. Before using this document, please confirm that this latest version. part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. Descriptions circuits, software, other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software, information design customer's equipment shall done under full responsibility customer. Corporation assumes responsibility losses incurred customer third parties arising from these circuits, software, information. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customers must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact sales representative advance.

µPA1731 SWITCHING P-CHANNEL POWER INDUSTRIAL DESCRIPTION

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