µPA1763 SWITCHING DUAL N-CHANNEL POWER INDUSTRIAL DESCRIPTIO

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µPA1763 SWITCHING DUAL N-CHANNEL POWER INDUSTRIAL DESCRIPTIO

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FIELD EFFECT TRANSISTOR
µPA1763
SWITCHING DUAL N-CHANNEL POWER INDUSTRIAL
DESCRIPTION
µPA1763 N-Channel Field Effect Transistor designed DC/DC Converters.
PACKAGE DRAWING (Unit
Source Gate Drain Source Gate Drain ±0.3
+0.10 -0.05
FEATURES
Dual chip type on-resistance RDS(on)1 47.0 MAX. (VGS RDS(on)2 57.0 MAX. (VGS RDS(on)3 66.0 MAX. (VGS input capacitance Ciss TYP. Built-in protection diode Small surface mount package (Power SOP8)
MAX.
5.37 MAX.
1.44
0.15
0.05 MIN.
±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 -0.05
0.12
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
µPA1763G
ABSOLUTE MAXIMUM RATINGS terminals connected.)
Drain Source Voltage Gate Source Voltage Drain Current (DC) Drain Current (pulse)
Note1 Note2 Note2
VDSS VGSS ID(DC) ID(pulse) Tstg
±4.5
Gate Protection Diode Source Gate Body Diode
EQUIVALENT CIRCUIT (1/2 Circuit)
Drain
Total Power Dissipation unit) Total Power Dissipation unit) Single Avalanche Current Single Avalanche Energy Channel Temperature Storage Temperature
Note3 Note3
Notes Duty cycle Mounted ceramic substrate 1200 Starting Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage Exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document G14056EJ1V0DS00 (1st edition) Date Published January 2000 CP(K) Printed Japan
mark shows major revised points.
1999, 2000
µPA1763
ELECTRICAL CHARACTERISTICS terminals connected.)
CHARACTERISTICS Drain Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) TEST CONDITIONS VGS(on) di/dt A/µs 0.80 MIN. TYP. 37.0 45.0 49.0 MAX. 47.0 57.0 66.0 UNIT
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T.
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
VGS(on)
BVDSS
Duty Cycle
Wave Form
td(on) td(off) toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet G14056EJ1V0DS00
µPA1763
TYPICAL CHARACTERISTICS 25°C, terminals connected.)
FORWARD TRANSFER CHARACTERISTICS Pulsed DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
Drain Current
Drain Current
0.01
0.001
Gate Source Voltage
Drain Source Voltage
|yfs| Forward Transfer Admittance
Pulsed
RDS(on) Drain Source On-state Resistance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
Drain Current
Gate Source Voltage
RDS(on) Drain Source state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
VGS(off) Gate Source Cut-off Voltage
0.12 0.08 0.06 0.04 0.02
Pulsed
Drain Current
Channel Temperature
Data Sheet G14056EJ1V0DS00
µPA1763
RDS(on) Drain Source On-state Resistance
Diode Forward Current
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE Pulsed
SOURCE DRAIN DIODE FORWARD VOLTAGE Pulsed
0.01 0.00
0.50
1.00
1.50
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE 10000 1000 1000 Ciss
SWITCHING CHARACTERISTICS
td(on), td(off), Switching Time
Ciss, Coss, Crss Capacitance
td(off) td(on)
Coss
Crss
Drain Source Voltage
Drain Current
REVERSE RECOVERY TIME DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Drain Source Voltage
Reverse Recovery Time
di/dt A/µs 1000
35.0 30.0 25.0 20.0 15.0 10.0
Drain Current
Gate Charge
Data Sheet G14056EJ1V0DS00
Gate Source Voltage
10000
60.0 55.0 50.0 45.0 40.0
µPA1763
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Total Power Dissipation W/package
unit unit
Percentage Rated Power
Mounted ceramic substrate 1200
Ambient Temperature
Ambient Temperature
FORWARD BIAS SAFE OPERATING AREA
Mounted ceramic substrate 1200mm2 unit
Drain Current
ID(pulse)
ID(DC)
Single Pulse
Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
rth(t) Transient Thermal Resistance °C/W
1000 Rth(ch-A) 73.5°C/W
Mounted ceramic substrate 1200mm2 Single Pulse, unit
0.01
1000
Pulse Width
Data Sheet G14056EJ1V0DS00
µPA1763
SINGLE AVALANCHE CURRENT INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY DERATING FACTOR
Single Avalanche Current
Energy Derating Factor
Starting
100µ
Inductive Load
Starting Starting Channel Temperature
Data Sheet G14056EJ1V0DS00
µPA1763
[MEMO]
Data Sheet G14056EJ1V0DS00
µPA1763
information this document subject change without notice. Before using this document, please confirm that this latest version. part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. Descriptions circuits, software, other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software, information design customer's equipment shall done under full responsibility customer. Corporation assumes responsibility losses incurred customer third parties arising from these circuits, software, information. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customers must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact sales representative advance.

µPA1763 SWITCHING DUAL N-CHANNEL POWER INDUSTRIAL DESCRIPTIO

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