µPA1760 DESCRIPTION µPA1760 N-Channel Field Effect Transisto

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µPA1760 DESCRIPTION µPA1760 N-Channel Field Effect Transisto

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FIELD EFFECT TRANSISTOR
µPA1760
DESCRIPTION
µPA1760 N-Channel Field Effect Transistor designed DC/DC Converters power management application notebook computers.
PACKAGE DRAWING (Unit
Source1 Gate1 Drain1 Source2 Gate2 Drain2 ±0.3
+0.10 -0.05
FEATURES
Dual Chip Type
1.44
On-Resistance RDS(on)1 26.0 MAX. (VGS RDS(on)2 36.0 MAX. (VGS RDS(on)3 42.0 MAX. (VGS Ciss Ciss TYP. Built-in Protection Diode Small Surface Mount Package (Power SOP8)
Max.
5.37 Max.
0.15
0.05 Min.
±0.2 0.10
1.27 0.40
0.78 Max. 0.12
+0.10 -0.05
ABSOLUTE MAXIMUM RATINGS terminals connected.)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) Drain Current (Pulse)
Note1 Note2 Note2
VDSS VGSS ID(DC) ID(pulse) Tstg
±8.0
Gate Body Diode Drain
EQUIVALENT CIRCUIT (1/2 Circuit)
Total Power Dissipation unit) Total Power Dissipation unit) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3
Gate Protection Diode
Source
Notes Duty cycle Mounted ceramic substrate 2000 Starting Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage Exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document G13891EJ1V0DS00 (1st edition) Date Published November 1999 CP(K) Printed Japan
mark shows major revised points.
1998,1999
µPA1760
ELECTRICAL CHARACTERISTICS terminals connected.)
CHARACTERISTICS Drain Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) TEST CONDITIONS VGS(on) di/dt 100A/µs 0.86 MIN. TYP. 20.5 27.0 31.0 MAX. 26.0 36.0 42.0 UNIT
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T.
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
VGS(on)
BVDSS
Duty Cycle
Wave Form
td(on) td(off) toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet G13891EJ1V0DS00
µPA1760
TYPICAL CHARACTERISTICS 25°C)
FORWARD TRANSFER CHARACTERISTICS Pulsed
DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed VGS=10 VGS=4.5
Drain Current
Drain Current
TA=125°C TA=75°C
VGS=4.0
TA=25°C TA=-25°C
Gate Source Voltage
Drain Source Voltage
|yfs| Forward Transfer Admittance
VDS=10V Pulsed -25°C 25°C
RDS(on) Drain Source On-state Resistance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed ID=4 ID=8
=75°C =125°C
Drain Current
Gate Source Voltage
RDS(on) Drain Source On-state Resistance
VGS(off) Gate Source Cut-off Voltage
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT VGS=4.5V
GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE VDS=10 ID=1
VGS=4.0V
VGS=10V
Drain Current
Channel Temperature
Data Sheet G13891EJ1V0DS00
µPA1760
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
SOURCE DRAIN DIODE FORWARD VOLTAGE Pulsed
VGS=4.5V
Diode Forward Current
VGS=10V VGS=0V
VGS=10V
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS 1000
td(on), td(off), Switching Time
Ciss, Coss, Crss Capacitance
1000 Ciss
td(off) td(on)
Coss Crss
Drain Source Voltage
Drain Current
REVERSE RECOVERY TIME DRAIN CURRENT 1000
Reverse Recovery Time
Drain Source Voltage
VDD=24 VDD=15 VDD=6
Drain Current
Gate Charge
Data Sheet G13891EJ1V0DS00
Gate Source Voltage
di/dt A/µs
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
µPA1760
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Total Power Dissipation W/package
unit unit
Percentage Rated Power
Mounted ceramic substrate 2000
Ambient Temperature
Ambient Temperature
FORWARD BIAS SAFE OPERATING AREA
ID(pulse)
Mounted ceramic substrate unit
Drain Current
ID(DC)
Single Pulse
Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
rth(t) Transient Thermal Resistance °C/W
Rth(ch-A) 73.5°C/W
Mounted ceramic substrate 2000mm2 1.6mm Single Pulse, unit, TA=25°C
0.01
Pulse Width
Data Sheet G13891EJ1V0DS00
µPA1760
SINGLE AVALANCHE CURRENT INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY DERATING FACTOR
Single Avalanche Current
Energy Derating Factor
Starting 25°C
Inductive Load
Starting Starting Channel Temperature
Data Sheet G13891EJ1V0DS00
µPA1760
[MEMO]
Data Sheet G13891EJ1V0DS00
µPA1760
information this document subject change without notice. Before using this document, please confirm that this latest version. part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. Descriptions circuits, software, other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software, information design customer's equipment shall done under full responsibility customer. Corporation assumes responsibility losses incurred customer third parties arising from these circuits, software, information. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customers must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact sales representative advance.

µPA1760 DESCRIPTION µPA1760 N-Channel Field Effect Transisto

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