N-CHANNEL 0.010 DPAK/IPAK ULTRA GATE CHARGE STripFETPOWER MOSFET

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N-CHANNEL 0.010 DPAK/IPAK ULTRA GATE CHARGE STripFETPOWER MOSFET

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STD55NH2LL
N-CHANNEL 0.010 DPAK/IPAK ULTRA GATE CHARGE STripFETPOWER MOSFET
TYPE STD55NH2LL
VDSS
TYPICAL RDS(on) 0.01 TYPICAL RDS(on) 0.012 RDS(ON) INDUSTRY's BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED THRESHOLD DEVICE THROUGH-HOLE IPAK (TO-251) POWER PACKAGE TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE TAPE REEL (SUFFIX "T4")
RDS(on) 0.011
A(*)
IPAK TO-251 (Suffix "-1") DPAK TO-252 (Suffix "T4")
DESCRIPTION
STD55NH2LL based latest generation ST's proprietary STripFETtechnology. innovative layout enables device also exhibit extremely gate charge most demanding requirements high-side switch high-frequency DC-DC converters. It's therefore ideal high-density converters Telecom Computer applications.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS SPECIFICALLY DESIGNED OPTIMISED HIGH EFFICIENCY DC/DC CONVERTES
Ordering Information
SALES TYPE STD55NH2LLT4 STD55NH2LL-1 MARKING D55NH2LL D55NH2LL PACKAGE TO-252 TO-251 PACKAGING TAPE REEL TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol Vspike(1) VDGR ID(*) IDM(2) Ptot EAS(3) Tstg March 2004 Parameter Drain-source Voltage Rating Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuous) 25°C Drain Current (continuous) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value Unit W/°C 1/12
STD55NH2LL
THERMAL DATA
Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature Soldering Purpose °C/W °C/W
ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED)
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Test Conditions Rating Rating 125°C Min. Typ. Max. Unit
±100
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions Min. Typ. 0.010 0.012 Max. 0.011 0.0135 Unit
DYNAMIC
Symbol Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Input Resistance Test Conditions Min. Typ. Max. Unit
Gate Bias Test Signal Level Open Drain
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STD55NH2LL
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbol td(on) Qoss(5) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Output Charge Test Conditions (Resistive Load, Figure 0.44V 10V, VGS= VDS= VGS= Min. Typ. Max. Unit
SWITCHING
Symbol td(off) Parameter Turn-off Delay Time Fall Time Test Conditions 4.7, (Resistive Load, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions Min. Typ. Max. Unit
di/dt 100A/µs 150°C (see test circuit, Figure Value limited wire bonding
32.5
Garanted when external Rg=4.7 tfmax. Pulse width limited safe operating area Starting 20A,
Pulsed: Pulse duration duty cycle Qoss Coss* Coss Appendix
Safe Operating Area
Thermal Impedance
3/12
STD55NH2LL
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source Resistance
Gate Charge Gate-source Voltage
Capacitance Variations
4/12
STD55NH2LL
Normalized Gate Threshold Voltage Temperature Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature
5/12
STD55NH2LL
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuits Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
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STD55NH2LL
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. 0.45 0.48 15.9 0.95 16.3 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 0.64 TYP. MAX. 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
0068771-E
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STD55NH2LL
TO-252 (DPAK) MECHANICAL DATA
MIN. 0.03 0.64 0.45 0.48 9.35 0.023 TYP. MAX. 0.23 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397
DIM.
DETAIL
DETAIL
0068772-B
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STD55NH2LL
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STD55NH2LL
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STD55NH2LL
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2004 STMicroelectronics Rights Reserved
STMicroelectronics GROUP COMPANIES Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco -Singapore Spain Sweden Switzerland United Kingdom United States. www.st.com
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N-CHANNEL 0.010 DPAK/IPAK ULTRA GATE CHARGE STripFETPOWER MOSFET

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