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formerly General Semiconductor Surface Mount TRANSZORB® Transient
Top Searches for this datasheetSMCJ5.0 thru 188CA formerly General Semiconductor Surface Mount TRANSZORB® Transient Voltage Suppressors DO-214AB (SMC J-Bend) 0.126 (3.20) 0.114 (2.90) Stand-off Voltage 188V Peak Pulse Power 1500W Cathode Band 0.245 (6.22) 0.220 (5.59) 0.280 (7.11) 0.260 (6.60) ltag 0.126 MIN. (3.20 MIN.) Mounting Layout 0.185 MAX. (4.69 MAX.) 0.012 (0.305) 0.006 (0.152) 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.320 (8.13) 0.305 (7.75) 0.060 MIN. (1.52 MIN.) 0.008 (0.203) Max. Dimensions inches (millimeters) 0.320 Features Underwriters Laboratory Recognition under standard safety 497B: Isolated Loop Circuit Protection profile package with built-in strain relief surface mounted applications Glass passivated junction incremental surge resistance, excellent clamping capability 1500W peak pulse power capability with 10/1000µs waveform, repetition rate (duty cycle): 0.01% Very fast response time High temperature soldering guaranteed: 250°C/10 seconds terminals Mechanical Data Case: JEDEC DO-214AB molded plastic over passivated junction Terminals: Solder plated, solderable MIL-STD-750, Method 2026 Polarity: unidirectional types band denotes cathode, which positive with respect anode under normal operation Weight: 0.007 oz., 0.21 Flammability: Epoxy rated 94V-0 Devices Bidirectional Applications bi-directional devices, suffix (e.g. SMCJ10C, SMCJ10CA). Electrical characteristics apply both directions. Maximum Ratings Thermal Characteristics Parameter Peak pulse power dissipation with 10/1000µs waveform(1)(2) Peak pulse current with 10/1000µs waveform(1) Peak forward surge current 8.3ms single half sine-wave uni-directional only Typical thermal resistance, junction ambient Typical thermal resistance, junction lead Operating junction storage temperature range Ratings 25°C ambient temperature unless otherwise specified. Symbol PPPM IPPM IFSM TSTG Value Minimum 1500 Next Table +150 Unit °C/W °C/W Notes: Non-repetitive current pulse, Fig.3 derated above 25°C Fig. Mounted 0.31 0.31" (8.0 8.0mm) copper pads each terminal Mounted minimum recommended layout Document Number 88394 07-Jul-04 www.vishay.com SMCJ5.0 thru 188CA formerly General Semiconductor Electrical Characteristics Ratings 25°C ambient temperature unless otherwise specified. Device Type Modified Bend Lead +SMCJ5.0 +SMCJ5.0A(5) +SMCJ6.0 +SMCJ6.0A +SMCJ6.5 +SMCJ6.5A +SMCJ7.0 +SMCJ7.0A +SMCJ7.5 +SMCJ7.5A +SMCJ8.0 +SMCJ8.0A +SMCJ8.5 +SMCJ8.5A +SMCJ9.0 +SMCJ9.0A +SMCJ10 +SMCJ10A +SMCJ11 +SMCJ11A +SMCJ12 +SMCJ12A +SMCJ13 +SMCJ13A +SMCJ14 +SMCJ14A +SMCJ15 +SMCJ15A +SMCJ16 +SMCJ16A +SMCJ17 +SMCJ17A +SMCJ18 +SMCJ18A +SMCJ20 +SMCJ20A +SMCJ22 +SMCJ22A +SMCJ24 +SMCJ24A +SMCJ26 +SMCJ26A +SMCJ28 +SMCJ28A +SMCJ30 +SMCJ30A Device Marking Code Breakdown Voltage V(BR) 6.40 7.82 6.40 7.07 6.67 8.15 6.67 7.37 7.22 8.82 7.22 7.98 7.78 9.51 7.78 8.60 8.33 10.2 8.33 9.21 8.89 10.9 8.89 9.83 9.44 11.5 9.44 10.4 10.0 12.2 10.0 11.1 11.1 13.6 11.1 12.3 12.2 14.9 12.2 13.5 13.3 16.3 13.3 14.7 14.4 17.6 14.4 15.9 15.6 19.1 15.6 17.2 16.7 20.4 16.7 18.5 17.8 21.8 17.8 19.7 18.9 23.1 18.9 20.9 20.0 24.4 20.0 22.1 22.2 27.1 22.2 24.5 24.4 29.8 24.4 26.9 26.7 32.6 26.7 29.5 28.9 35.3 28.9 31.9 31.1 38.0 31.1 34.4 33.3 40.7 33.3 36.8 Test Current (mA) 10.0 10.0 10.0 10.0 10.0 10.0 10.0 10.0 Stand-off Voltage 3.5V 100A (uni-directional only) Maximum Maximum Maximum Reverse Leakage Peak Pulse Surge Clamping Current IPPM Voltage IPPM (µA) (A)(2) 1000 156.3 1000 163.0 1000 131.6 11.4 1000 145.6 10.3 122.0 12.3 133.9 11.2 112.8 13.3 125.0 12.0 104.9 14.3 116.3 12.9 100.0 15.0 110.3 13.6 94.3 15.9 104.2 14.4 88.8 16.9 97.4 15.4 79.8 18.8 88.2 17.0 74.6 20.1 82.4 18.2 68.2 22.0 75.4 19.9 63.0 23.8 69.8 21.5 58.1 25.8 64.7 23.2 55.8 26.9 61.5 24.4 52.1 28.8 57.7 26.0 49.2 30.5 54.3 27.6 46.6 32.2 51.4 29.2 41.9 35.8 46.3 32.4 38.1 39.4 42.3 35.5 34.9 43.0 38.6 38.9 32.2 46.6 35.6 42.1 30.0 50.0 33.0 45.4 28.0 53.5 31.0 48.4 Notes: Pulse test: 50ms Surge current waveform Fig. derate Fig. bi-directional types having Volts less, limit doubled terms symbols consistent with ANSI/IEEE C62.35 bi-directional SMCG/SMCJ5.0CA, maximum V(BR) 7.25V Underwriters Laboratory Recognition classification protectors (QVGQ2) under standard safety 497B file number E136766 both uni-directional bi-directional devices www.vishay.com Document Number 88394 07-Jul-04 SMCJ5.0 thru 188CA formerly General Semiconductor Electrical Characteristics Ratings 25°C ambient temperature unless otherwise specified. Device Type Modified Bend Lead +SMCJ33 +SMCJ33A +SMCJ36 +SMCJ36A +SMCJ40 +SMCJ40A +SMCJ43 +SMCJ43A +SMCJ45 +SMCJ45A +SMCJ48 +SMCJ48A +SMCJ51 +SMCJ51A +SMCJ54 +SMCJ54A +SMCJ58 +SMCJ58A +SMCJ60 +SMCJ60A +SMCJ64 +SMCJ64A +SMCJ70 +SMCJ70A +SMCJ75 +SMCJ75A +SMCJ78 +SMCJ78A +SMCJ85 +SMCJ85A +SMCJ90 +SMCJ90A +SMCJ100 +SMCJ100A +SMCJ110 +SMCJ110A +SMCJ120 +SMCJ120A +SMCJ130 +SMCJ130A +SMCJ150 +SMCJ150A +SMCJ160 +SMCJ160A +SMCJ170 +SMCJ170A SMCJ188 SMCJ188A Device Marking Code Breakdown Voltage V(BR) 36.7 44.9 36.7 40.6 40.0 48.9 40.0 44.2 44.4 54.3 44.4 49.1 47.8 58.4 47.8 52.8 50.0 61.1 50.0 55.3 53.3 65.1 53.3 58.9 56.7 69.3 56.7 62.7 60.0 73.3 60.0 66.3 64.4 78.7 64.4 71.2 66.7 81.5 66.7 73.7 71.1 86.9 71.1 78.6 77.8 95.1 77.8 86.0 83.3 83.3 92.1 86.7 86.7 95.8 94.4 94.4 Test Current (mA) Stand-off Voltage 3.5V 100A (uni-directional only) Maximum Maximum Maximum Reverse Leakage Peak Pulse Surge Clamping Current IPPM Voltage IPPM (µA) (A)(2) 25.4 59.0 28.1 53.3 23.3 64.3 25.8 58.1 21.0 71.4 23.3 64.5 19.6 76.7 21.6 69.4 18.7 80.3 20.6 72.7 17.5 85.5 19.4 77.4 16.5 91.1 18.2 82.4 15.6 96.3 17.2 87.1 14.6 16.0 14.0 15.5 13.2 14.6 12.0 13.3 11.2 12.4 10.8 11.9 10.9 10.3 Notes: Pulse test: 50ms Surge current waveform Fig. derate Fig. bi-directional types having Volts less, limit doubled terms symbols consistent with ANSI/IEEE C62.35 Underwriters Laboratory Recognition classification protectors (QVGQ2) under standard safety 497B file number E136766 both uni-directional bi-directional devices Document Number 88394 07-Jul-04 www.vishay.com SMCJ5.0 thru 188CA formerly General Semiconductor Ratings Characteristic Curves 25°C unless otherwise noted) Fig. Peak Pulse Power Rating Curve Peak Pulse Power (PPP) Current (IPP) Derating Percentage, Fig. Pulse Derating Curve PPPM Peak Pulse Power (kW) 0.31 0.31" (8.0 8.0mm) Copper Areas 0.1µs 1.0µs 10µs 100µs 1.0ms 10ms Pulse Width (sec.) Ambient Temperature (°C) Fig. Pulse Waveform 20,000 Fig. Typical Junction Capacitance Uni-Directional Junction Capacitance (pF) 10,000 Measured Zero Bias IPPM Peak Pulse Current, IRSM 10µsec. Peak Value IPPM 25°C Pulse Width (td) defined point where peak current decays IPPM 1,000 Measured Stand-Off Voltage, Uni-Directional Bi-Directional 25°C 1.0MHz Vsig 50mVp-p Half Value IPPM 10/1000µsec. Waveform defined R.E.A. Time (ms) Reverse Stand-Off Voltage Fig. Typical Transient Thermal Impedance Fig. Maximum Non-Repetitive Forward Surge Current Uni-Directional Only Transient Thermal Impedance (°C/W) Peak Forward Surge Current, Amperes 0.001 0.01 1000 8.3ms Single Half Sine-Wave (JEDEC Method) max. Pulse Duration (sec) www.vishay.com Number Cycles 60Hz Document Number 88394 07-Jul-04 Other recent searchesSN74ACT534 - SN74ACT534 SN74ACT534 Datasheet SN54ACT534 - SN54ACT534 SN54ACT534 Datasheet ENA0587A - ENA0587A ENA0587A Datasheet CNZ3132 - CNZ3132 CNZ3132 Datasheet CNZ3133 - CNZ3133 CNZ3133 Datasheet CNZ3134 - CNZ3134 CNZ3134 Datasheet CNY75B - CNY75B CNY75B Datasheet BUF410A - BUF410A BUF410A Datasheet ASI1001 - ASI1001 ASI1001 Datasheet
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