-12A, -100V, P-Channel Enhancement Mode Power Field Effect Transistor

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-12A, -100V, P-Channel Enhancement Mode Power Field Effect Transistor

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2N6897
-12A, -100V, P-Channel Enhancement Mode Power Field Effect Transistor
2N6897 P-Channel enhancement mode silicon gate power field effect transistor designed applications such switching regulators, switching converters, motor drivers, relay drivers, drivers high power bipolar switching transistors requiring high speed gate drive power. This device operated directly from integrated circuit.
Features
-12A, -100V rDS(ON) Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device
Symbol
Ordering Information
PART NUMBER 2N6897 PACKAGE TO-204AA BRAND 2N6897
NOTE: When ordering, include entire part number.
Packaging
JEDEC TO-204AA
©2001 Fairchild Semiconductor Corporation
2N6897 Rev.
2N6897
Absolute Maximum Ratings
25oC, Unless Otherwise Specified 2N6897 -100 -100 UNITS W/oC
Drian Source Voltage BVDSS Drian Gate Voltage (RGS .VDGR Continuous Drain Current Continuous Pulsed Drain Current. Gate Source Voltage. Maximum Power Dissipation 25oC Above 25oC, Derate Linearly Operating Storage Junction Temperature Range TSTG Maximum Lead Temperature Soldering. distance (3.17mm) from seating plane max)
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
Electrical Specifications
PARAMETER Drian Source Breakdown Voltage Gate Threshold Voltage Zero-Gate Voltage Drain Current Zero-Gate Voltage Drain Current 125oC Gate Source Leakage Current
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 1mA, VDS, 0.25mA -80V -80V IGSS VDS(ON) rDS(ON) ±20V, 7.6A, -10V =12A, -10V 7.6A, -10V 7.6A, CISS COSS CRSS td(ON) td(OFF) 7.6A, -50V RGEN -10V 7.6A, -10V -25V 0.1MHz -100 2.28 -4.8 0.465 1500 1.25 UNITS
oC/W
Drian Source On-Voltage (Note
Static Drian Source Resistance (Note Static Drian Source Resistance 125oC (Note Forward Transconductance (Note Input Capacitance Output Capacitance Reverse-Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Thermal Resistance Junction-to-Case
Source Drain Diode Specifications
PARAMETER Diode Forward Voltage (Note Diode Reverse Recovery Time NOTE: Pulsed: pulse duration 300µs, max, duty cycle SYMBOL TEST CONDITIONS dIF/dt 100A/µs UNITS
©2001 Fairchild Semiconductor Corporation
2N6897 Rev.
2N6897 Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT
Unless Otherwise Specified
25oC RATED 100µs 1.0ms 10ms OPERATION THIS AREA LIMITED rDS(ON) 100ms VDSS(MAX) 100V 0.01 VDS, DRAIN SOURCE 1000
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION TEMPERATURE DERATING CURVE
FIGURE MAXIMUM OPERATING AREAS CURVE
Id(ON), ON-STATE DRAIN CURRENT rDS(ON), DRAIN SOURCE RESISTANCE 125oC 125oC -40oC PULSE TEST PULSE DURATION 80µs DUTY CYCLE 25oC -40oC
PULSE TEST PULSE DURATION 80µs DUTY CYCLE 125oC
25oC -40oC
DRAIN CURRENT
VGS, GATE SOURCE VOLTAGE
FIGURE TRANSFER CHARACTERISTICS
FIGURE DRAIN SOURCE RESISTANCE FUNCTION DRAIN CURRENT
VGS(TH), NORMALIZED GATE THRESHOLD VOLTAGE 0.25mA
NORMALIZED DRAIN SOURCE
7.6A
RESISTANCE
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED rDS(ON) JUNCTION TEMPERATURE
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
2N6897 Rev.
2N6897 Typical Performance Curves
2400 2000
CAPACITANCE
Unless Otherwise Specified (Continued)
gfs, FORWARD TRANSCONDUCTANCE
1MHz
DRAIN CURRENT
-40oC 25oC
1600 1200 COSS CRSS VDS, DRAIN SOURCE VOLTAGE CISS
125oC
FIGURE CAPACITANCE VOLTAGE
FIGURE FORWARD TRANSCONDUCTANCE FUNCTION DRAIN CURRENT
Test Circuit Waveforms
PULSE WIDTH td(ON) tOFF td(OFF)
FIGURE RESISTIVE SWITCHING TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
©2001 Fairchild Semiconductor Corporation
2N6897 Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER
SMART SuperSOTTM-6 SuperSOTTM-8
VCX
STAR*POWER used under license
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life systems which, intended surgical implant into support device system whose failure perform body, support sustain life, whose reasonably expected cause failure life failure perform when properly used accordance support device system, affect safety with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

-12A, -100V, P-Channel Enhancement Mode Power Field Effect Transistor

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