N-Channel 2.5-V (G-S) Battery Switch rDS(on) 0.053 0.075

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N-Channel 2.5-V (G-S) Battery Switch rDS(on) 0.053 0.075

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Si6954ADQ
N-Channel 2.5-V (G-S) Battery Switch
rDS(on)
0.053 0.075
TSSOP-8
View Ordering Information: Si6954ADQ-T1 N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150_C)a Pulsed Drain Current Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction Storage Temperature Range 25_C 70_C 25_C 70_C
Symbol
Tstg
secs
0.83 0.96
Steady State
Unit
0.69 0.83 0.53
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes Surface Mounted Board. Document Number: 71130 S-31989-Rev. 13-Oct-03 www.siliconix.com Steady State Steady State
Symbol
RthJA RthJF
Typical
Maximum
Unit
_C/W
Si6954ADQ
SPECIFICATIONS 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) VGS, 55_C 0.83 0.044 0.062 0.053 0.075
Symbol
Test Condition
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time td(on) td(off) 0.83 di/dt A/ms VGEN
Notes Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
thru Drain Current Drain Current
Transfer Characteristics
125_C 25_C 55_C
Drain-to-Source Voltage
Gate-to-Source Voltage
www.siliconix.com FaxBack 408-970-5600
Document Number: 71130 S-31989-Rev. 13-Oct-03
Si6954ADQ
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance Drain Current
0.15 DS(on) On-Resistance Capacitance (pF) Ciss Crss Coss
Capacitance
0.12
0.09
0.06
0.03
0.00
Drain Current
Drain-to-Source Voltage
Gate Charge
Gate-to-Source Voltage
On-Resistance Junction Temperature
Total Gate Charge (nC)
DS(on) On-Resistance (Normalized)
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
150_C Source Current DS(on) On-Resistance 0.15
On-Resistance Gate-to-Source Voltage
0.12
0.09
25_C
0.06
0.03
0.00 Source-to-Drain Voltage Gate-to-Source Voltage
Document Number: 71130 S-31989-Rev. 13-Oct-03
www.siliconix.com
Si6954ADQ
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
GS(th) Variance Power
Single Pulse Power, Junction-to-Ambient
Time (sec)
Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance
Duty Cycle
0.05 0.02 Single Pulse 0.01 Square Wave Pulse Duration (sec)
Notes: Duty Cycle,
Unit Base RthJA 126_C/W PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient Thermal Impedance
Duty Cycle
0.05 0.02
0.01
Single Pulse Square Wave Pulse Duration (sec)
www.siliconix.com FaxBack 408-970-5600
Document Number: 71130 S-31989-Rev. 13-Oct-03

N-Channel 2.5-V (G-S) Battery Switch rDS(on) 0.053 0.075

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