µPA1712 SWITCHING P-CHANNEL POWER INDUSTRIAL DESCRIPTION

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µPA1712 SWITCHING P-CHANNEL POWER INDUSTRIAL DESCRIPTION

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FIELD EFFECT POWER TRANSISTORS
µPA1712
SWITCHING P-CHANNEL POWER INDUSTRIAL
DESCRIPTION
This product P-Channel Field Effect Transistor designed power management applications notebook computers Li-ion battery protection circuit.
PACKAGE DIMENSIONS
millimeter)
FEATURES
On-Resistance RDS(on)1 MAX. (VGS -4.0 RDS(on)2 MAX. (VGS -4.0 Ciss Ciss 2700 TYP.
5.37 MAX.
+0.10 -0.05
Source Gate Drain
Built-in Protection Diode
1.44
±0.3
(Power SOP8)
MAX.
Small Surface Mount Package
0.15
0.05 MIN.
±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 -0.05
0.12
ABSOLUTE MAXIMUM RATINGS terminals connected)
Drain Source Voltage Gate Source Voltage Drain Current (DC) Drain Current (pulse)
Notes1 Notes2
VDSS VGSS ID(DC) ID(pulse) Tstg
+8.0 +150
Gate Protection Diode Gate
Drain
Total Power Dissipation Channel Temperature Storage Temperature Notes
Body Diode
Source
Duty Cycle Mounted ceramic substrate 1200
diode connected between gate source transistor serves protector against ESD. When this device acutally used, addtional protection circuit externally required voltage exceeding rated voltage applied this device.
Document D11495EJ1V0DS00 (1st edition) Date Published December 1996 Printed Japan
1996
µPA1712
ELECTRICAL CHARACTERISTICS terminals connected)
CHARACTERISTICS Drain Source On-state Resistance Gate Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on)1 RDS(on)2 VGS(off) IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) TEST CONDITIONS -4.0 -4.0 -4.0 -4.0 VGS(on) -8.0 di/dt A/µs 2700 1000 14.5 0.80 -1.0 MIN. TYP. -1.7 MAX. -2.5 UNIT
Test Circuit Switching Time
Test Circuit Gate Charge
D.U.T.
Wave Form
D.U.T.
(on)
Wave Form
Duty Cycle
(on) (off) toff
µPA1712
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
Percentage Rated Power
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Total Power Dissipation
Mounted ceramic substrate
Ambient Temperature
Ambient Temperature
FORWARD BIAS SAFE OPERATING AREA -100
Lim-10
ID(pulse)
Note: Mounted ceramic substrate
Drain Current
ID(DC)
-0.1 -0.1
Single Pulse
-100
Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
rth(t) Transient Thermal Resistance °C/W
Mounted ceramic substrate Single Pulse Channel Ambient
0.01 0.001
Pulse Width
µPA1712
FORWARD TRANSFER CHARACTERISTICS -100 Pulsed
Drain Current
DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
Drain Current
-4.5
-0.1
-0.4
-0.8
-1.2
-1.6
Gate Source Voltage
Drain Source Voltage
Forward Transfer Admittance
-100
Pulsed
RDS(on) Drain Source On-State Resistance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
-4.0
-0.1
-100
Drain Current
Gate Source Voltage
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT Pulsed
VGS(off) Gate Source Cutoff Voltage
GATE SOURCE CUTOFF VOLTAGE CHANNEL TEMPERATURE -2.0
-4.5
-1.5
-1.0
-0.5
Channel Temperature
Drain Current
-100
µPA1712
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
Diode Forward Current
SOURCE DRAIN DIODE FORWARD VOLTAGE Pulsed
-4.5
-10V
-4.0
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE
Ciss, Coss, Crss Capacitance
SWITCHING CHARACTERISTICS
td(on), td(off), Switching Time
Ciss
td(off) td(on)
Coss Crss
-0.1
-100
-0.1
VGS(on) -100
Drain Source Voltage
Drain Current
REVERSE RECOVERY TIME DRAIN CURRENT
Reverse Recovery Time
di/dt A/µs
Drain Source Voltage
Diode Current
Gate Charge
Gate Source Voltage
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
µPA1712
REFERENCE
Document Name semiconductor device reliability/quality control system Quality grade semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide quality assurance semiconductor devices Application circuits using Power Safe operating area Power Document TEI-1202 C11531E C10535E M10943X MEI-1202 TEA-1035 TEA-1037
µPA1712
[MEMO]
µPA1712
part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customers must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact sales representative advance. Anti-radioactive design implemented this product.

µPA1712 SWITCHING P-CHANNEL POWER INDUSTRIAL DESCRIPTION

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