µPA1755 PACKAGE DRAWING (Unit Source Gate Drain Source Gate

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µPA1755 PACKAGE DRAWING (Unit Source Gate Drain Source Gate

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FIELD EFFECT TRANSISTOR
µPA1755
PACKAGE DRAWING (Unit
Source Gate Drain Source Gate Drain 5.37 Max.
+0.10 -0.05
DESCRIPTION
This product Dual N-channel Field Effect Transistor designed DC/DC converters power management applications notebook computers.
FEATURES
Dual chip type on-resistance RDS(on)1 MAX. (VGS
1.44
±0.3
input capacitance Ciss TYP. Built-in protection diode Small surface mount package (Power SOP8)
Max.
RDS(on)2 MAX. (VGS
0.15
0.05 Min.
±0.2 0.10
1.27 0.40
0.78 Max. 0.12
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
+0.10 -0.05
EQUIVALENT CIRCUIT
(1/2 Circuit)
Drain
µPA1755G
ABSOLUTE MAXIMUM RATINGS terminals connected.)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) Drain Current (pulse)
Note1 Note2 Note2
VDSS VGSS ID(DC) ID(pulse) Tstg
±7.0
Gate
Body Diode
Total Power Dissipation unit) Total Power Dissipation unit) Channel Temperature Storage Temperature
Gate Protection Diode
Source
Notes Duty cycle Mounted ceramic substrate 2000 Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document G12715EJ1V0DS00 (1st edition) Date Published March 1999 CP(K) Printed Japan
1998
µPA1755
ELECTRICAL CHARACTERISTICS terminals connected.)
CHARACTERISTICS Drain Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) TEST CONDITIONS VGS(on) di/dt A/µs MIN. TYP. MAX. UNIT
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
TEST CIRCUIT GATE CHARGE
D.U.T.
(on)
Duty Cycle
Wave Form
(on) (off) toff
Data Sheet G12715EJ1V0DS00
µPA1755
TYPICAL CHARACTERISTICS
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
rth(t) Transient Thermal Resistance °C/W
0.01 0.001
Mounted ceramic substrate 2000mm2 1.1mm Single Pulse, unit
Pulse Width
RDS(on) Drain Source On-state Resistance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE ID=3.5 Pulsed
|yfs| Forward Transfer Admittance
TA=-50°C TA=-25°C 25°C
VDS=10V Pulsed
TA=75°C TA=125°C TA=150°C
Drain Current
Gate Source Voltage
RDS(on) Drain Source On-state Resistance
VGS(off) Gate Source Cut-off Voltage
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT Pulsed Drain Current VGS=10V VGS=4.5V
GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE VDS=10 ID=1
Channel Temperature
Data Sheet G12715EJ1V0DS00
µPA1755
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
SOURCE DRAIN DIODE FORWARD VOLTAGE Pulsed
Diode Forward Current
VGS=10V
VGS=4.5V VGS=10V
VGS=0V
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS 1000
td(on), td(off), Switching Time
Ciss, Coss, Crss Capacitance
1000
Ciss Coss
td(off) td(on)
Crss
Drain Source Voltage
Drain Current
REVERSE RECOVERY TIME DRAIN CURRENT 1000
Reverse Recovery Diode
Drain Source Voltage
VDD=24 VDD=15 VDD=6
Drain Current
Gate Charge
Data Sheet G12715EJ1V0DS00
Gate Source Voltage
di/dt A/µs
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
µPA1755
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Total Power Dissipation W/package
unit unit
Percentage Rated Power
Mounted ceramic substrate
Ambient Temperature
Ambient Temperature
FORWARD BIAS SAFE OPERATING AREA
ID(pulse) ID(DC)
DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
Mounted ceramic substrate unit
VGS=10
Drain Current
Drain Current
VGS=4.5 VGS=4
Single Pulse
Drain Source Voltage
Drain Source Voltage
FORWARD TRANSFER CHARACTERISTICS Pulsed
Drain Current
TA=150°C TA=125°C TA=75°C
TA=25°C TA=-25°C TA=-50°C
Gate Source Voltage
Data Sheet G12715EJ1V0DS00
µPA1755
[MEMO]
Data Sheet G12715EJ1V0DS00
µPA1755
[MEMO]
Data Sheet G12715EJ1V0DS00
µPA1755
information this document subject change without notice. Before using this document, please confirm that this latest version. part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. Descriptions circuits, software, other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software, information design customer's equipment shall done under full responsibility customer. Corporation assumes responsibility losses incurred customer third parties arising from these circuits, software, information. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customers must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact sales representative advance.

µPA1755 PACKAGE DRAWING (Unit Source Gate Drain Source Gate

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